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Infineon Technologies CY7C12681KV18-450BZXC

Part No.:
CY7C12681KV18-450BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C12681KV18-450BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,977

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Product details

Overview

CY7C12681KV18 from Cypress Semiconductor is a 36-Mbit DDR II+ SRAM with 2 M × 18 organization, 450 MHz max clock frequency, 2.5-cycle read latency, and HSTL I/O interface operating at 1.4–1.8 V VDDQ. It delivers 1100 MT/s effective data rate via double-data-rate transfers synchronized to K/K clocks and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C12681KV18 datasheet, CY7C12681KV18 pinout, CY7C12681KV18 application, or CY7C12681KV18 equivalent, key selection criteria include confirmed 2.5-cycle latency mode operation, echo-clock–based data capture (CQ/CQ), QVLD timing alignment, and 165-ball FBGA (13 × 15 × 1.4 mm) mechanical compatibility.

Technical Context

This device implements a synchronous pipelined SRAM core with DDR II+ architecture: addresses are latched on alternate rising edges of K/K, and read data is driven on both K and K rising edges. The internal PLL ensures precise data placement relative to echo clocks CQ/CQ.

All synchronous inputs pass through K- or K-controlled registers; outputs are registered to K/K. Write operations use on-chip self-timed circuitry, and byte write selects (BWS[1:0]) enable granular 9-bit byte updates within the 18-bit DQ[17:0] bus.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 36 Mbit / 2 M × 18 - supports 18-bit parallel data path with burst-2 access per cycle
Max Clock Frequency 450 MHz - defines maximum sustained transaction rate; enables 900 MT/s raw interface bandwidth
Read Latency 2.5 cycles (DOFF = HIGH) - determines minimum clock-to-output delay for first valid word in burst
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - allows interoperability with 1.5 V and 1.8 V system buses using HSTL-compatible drivers
Core Supply VDD = 1.8 V ± 0.1 V - powers SRAM array and logic; requires tight regulation for timing stability
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal performance suitable for sustained DDR operation
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 450 MHz with controlled slew and termination matching

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus 18-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads; tristated on deselect
K, K Differential input clocks Primary timing references; all synchronous operations edge-triggered on rising K or K; K used for address/load, both used for data
CQ, CQ Output echo clocks Free-running, phase-aligned copies of K/K; simplify system-level data capture without board-level skew compensation
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ; signals when DQ[17:0] carries valid read data - eliminates need for fixed delay windows
BWS[1:0] Byte write select inputs Active-low controls for two 9-bit bytes; enables partial writes without read-modify-write; sampled synchronously with K/K
LD Load strobe Synchronous address latch enable; defines start of bus cycle; must be stable before K rising edge per setup/hold requirements
R/W Read/write direction Sampled on K rising edge when LD is LOW; HIGH = read, LOW = write; determines internal path selection for burst access
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground; calibrates output driver strength to match 0.2 × RQ = 48 Ω line impedance

Key Features

Feature Design Value
2-word burst architecture Halves required address bus toggling frequency versus single-word access - reduces routing congestion and timing closure effort
Programmable 2.5-cycle or 1-cycle latency DOFF pin selects between high-throughput (2.5-cycle) or low-latency (1-cycle) modes - enables runtime optimization for traffic profile
Integrated PLL with echo clocks Eliminates need for external clock forwarding ICs; CQ/CQ provide deterministic, jitter-reduced timing references for FPGA/capture logic
HSTL I/O with ZQ calibration Ensures consistent 48 Ω output impedance across voltage/temperature/process - maintains signal integrity at 450 MHz without external termination
JTAG 1149.1 test access port Enables boundary-scan testing of interconnects in dense DDR layouts; supports production test and debug without physical probe access

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to SERDES MAC logic via 18-bit DDR bus.

Use Value: 2.5-cycle latency and echo-clock–driven capture enable reliable 900 MT/s throughput with minimal FPGA logic overhead for data alignment.

Use Scenario: Frame buffering in 10G/40G optical transport equipment requiring deterministic access timing.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as pipeline stage memory between framer and DSP subsystems.

Use Value: ZQ-calibrated HSTL outputs maintain signal fidelity across backplane traces; DOFF-selectable latency adapts to varying frame sizes.

High-Frequency Trading Engine Cache Test Equipment Pattern Memory

Use Scenario: Low-jitter instruction/data cache for FPGA-accelerated order-matching engines.

IC Role / Device Role / Timing Role: Deterministic-access memory co-located with soft-core processor fabric; accessed via tightly timed K/K-controlled bursts.

Use Value: QVLD signal removes uncertainty in data validity window - critical for sub-10 ns decision latency requirements.

Use Scenario: Storage of high-speed digital stimulus patterns in automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: Burst-mode waveform memory feeding parallel pin electronics (PE) drivers at >400 MHz clock rates.

Use Value: BWS[1:0]-enabled partial writes allow dynamic pattern patching without full reload - reducing test vector update latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C12681KV18-500BZXC 500 MHz max clock (vs. 450 MHz); identical 2 M × 18 organization, pinout, and feature set Supports higher bandwidth in systems with tighter timing margins and capable clock synthesis Select when system clock budget permits 500 MHz operation and higher sustained throughput is required
AS7C33618A-450BIN Same 2 M × 18 density and 450 MHz rating but uses SSTL-18 I/O (not HSTL); no echo clocks or QVLD Lacks CQ/CQ and QVLD - requires more complex FPGA capture logic and external termination resistors Choose only if existing board design already uses SSTL-18 infrastructure and echo-clock simplification is not needed

Compared with CY7C12681KV18-500BZXC, this -450BZXC variant trades 50 MHz clock headroom for lower power and relaxed timing closure; versus AS7C33618A-450BIN, it delivers superior signal integrity and reduced FPGA resource usage via integrated echo clocks and QVLD.

Availability

CY7C12681KV18 is available at Aetrix Electronics and suitable for network switching, telecom line card, high-frequency trading, and ATE pattern memory applications requiring stable component supply, long-term lifecycle support, and guaranteed FBGA package consistency.

Supply support for CY7C12681KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

This device belongs to the DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in networking and telecom infrastructure where echo-clock–synchronized data capture and low-latency burst access are critical.

FAQ

What is the function of the DOFF pin on CY7C12681KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for higher throughput; when LOW, it reverts to 1-cycle latency for minimal access delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does ZQ calibration work and what external component is required?

ZQ calibration adjusts output driver impedance to match the system data bus by referencing an external 240 Ω resistor connected between the ZQ pin and ground. The device measures this resistance and scales its output strength to achieve 48 Ω (0.2 × 240 Ω), ensuring consistent signal integrity without discrete termination.

Can CY7C12681KV18 operate with only one of the K or K clocks?

No - the device requires both K and K differential clocks for correct operation. K captures address and control signals; both K and K sample write data and drive read data. Omitting either clock violates timing specifications and prevents functional access to the memory array.

What is the purpose of the QVLD signal and how is it timed?

QVLD indicates when DQ[17:0] carries valid read data. It is edge-aligned with the CQ and CQ echo clocks - meaning its assertion coincides precisely with the data-valid window defined by those clocks. This eliminates fixed-delay assumptions and simplifies FPGA capture logic design.

CY7C12681KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C12681KV18-450BZXC FAQ

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The price and inventory of CY7C12681KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C12681KV18-450BZXC is usually 5 days.

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6.How does Aetrix verify that CY7C12681KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C12681KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C12681KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C12681KV18-450BZXC?

All CY7C12681KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C12681KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C12681KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C12681KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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