Infineon Technologies CY7C1268KV18-450BZXC

Overview

CY7C1268KV18 from Cypress Semiconductor is a 36-Mbit (2 M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.5-cycle read latency, 550 MHz clock support, and HSTL I/O interface operating at 1.4 V to 1.8 V. It delivers 1100 MT/s data throughput via double-data-rate transfers synchronized to K/K clocks and is used in high-bandwidth packet buffering for network switches and baseband processing in wireless infrastructure.

For engineers reviewing the CY7C1268KV18 datasheet, CY7C1268KV18 pinout, CY7C1268KV18 application, or CY7C1268KV18 equivalent, key selection considerations include its 165-ball FBGA package, echo-clock–driven data capture (CQ/CQ), QVLD-valid data indicator, DOFF-configurable PLL mode (DDR II+ vs DDR I), and JTAG 1149.1 test access compliance.

Technical Context

This SRAM implements a pipelined synchronous architecture where address and control signals (R/W, LD, BWS[1:0]) are registered on the rising edge of K, while write data is latched on both K and K edges. Read data is driven on both K and K edges with precise timing alignment to echo clocks CQ/CQ.

The device integrates a phase-locked loop (PLL) for accurate internal data placement when DOFF = HIGH (enabling 2.5-cycle latency), and reverts to DDR I timing (1-cycle latency) when DOFF = LOW. Core VDD is fixed at 1.8 V ±0.1 V; I/O VDDQ supports 1.4–1.8 V, enabling interoperability with 1.5 V and 1.8 V memory subsystems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C33618B-450BIN and IS61WV102418BLL-450T, CY7C1268KV18 uniquely combines programmable latency (via DOFF), echo-clock–driven data capture, and QVLD signaling-enabling simpler, higher-reliability DDR interfaces in FPGA-based telecom and test equipment where timing predictability is critical.

Availability

CY7C1268KV18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1268KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive applications.

CY7C1268KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in FPGA- and ASIC-based networking and signal processing systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin controls the internal PLL: when HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency and supports up to 450 MHz; when LOW, the PLL is disabled and the device reverts to DDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This allows hardware-level mode selection without firmware changes.

How do CQ and CQ echo clocks simplify system design?

CQ and CQ are free-running output clocks synchronized to the input K/K clocks and edge-aligned with DQ data transitions. They eliminate the need for external delay-locked loops or manual PCB trace length matching, enabling reliable data capture in FPGA receivers without per-lane deskew circuitry or complex timing closure.

Can CY7C1268KV18 be used in depth-expanded configurations?

Yes - the device supports depth expansion via LD-controlled burst initiation and automatic tristate of DQ outputs after deselection. When one device completes its 2-word burst, the next device can begin immediately on the subsequent K edge, enabling seamless multi-chip memory banks without wait states or external arbitration logic.

What is the role of the ZQ pin, and how should it be connected?

ZQ calibrates output driver impedance for DQ, CQ, and CQ pins. It must be connected to a precision resistor (RQ) tied to ground; output impedance is set to 0.2 × RQ. Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode. It must never be left floating or tied to GND.