Infineon Technologies CY7C12701KV18-400BZXC

Overview

CY7C12701KV18 from Cypress Semiconductor is a 36-Mbit (1 M × 36) DDR II+ synchronous SRAM with 2.5-cycle read latency, 400 MHz clock operation, and HSTL I/O interfaces. It delivers 800 MT/s effective data rate via double-data-rate transfers on rising edges of complementary K/K clocks, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C12701KV18 datasheet, CY7C12701KV18 pinout, CY7C12701KV18 application, or CY7C12701KV18 equivalent, key selection criteria include confirmed 1 M × 36 organization, 400 MHz max clock frequency, 1.8 V core / 1.4–1.8 V I/O supply range, 165-ball FBGA package, and DOFF-pin-controlled latency mode switching between 2.5-cycle and 1-cycle read latency.

Technical Context

This device implements a pipelined DDR II+ architecture with synchronous address latching on alternating K/K rising edges, self-timed writes, and burst-2 data transfer per access. It uses two independent input clocks (K and K) - both rising edges register write data and drive read data - and provides echo clocks CQ/CQ aligned to output data timing.

The SRAM core is organized as two 512 K × 36 arrays, supporting byte-wide write enables (BWS[3:0]) for selective 36-bit word updates. The DOFF pin selects between 2.5-cycle latency (DOFF = HIGH) and 1-cycle latency (DOFF = LOW), enabling compatibility with both DDR I and DDR II+ timing protocols.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C12701KV18-450BZXC, the -400BZXC variant trades 50 MHz bandwidth for lower power (750 mA vs. 820 mA) and relaxed timing closure. Against AS7C336000B-400BIN, it offers simpler timing validation via echo clocks but lacks true dual-port concurrency.

Availability

CY7C12701KV18-400BZXC is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, LTE baseband processing, and real-time video encoding requiring stable component supply across extended product lifecycles.

Supply support for CY7C12701KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing predictability.

This device belongs to the DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter memory interfacing in high-speed packet-processing systems where echo-clock–based data capture replaces complex PLL-based strobe generation.

FAQ

What is the function of the DOFF pin on CY7C12701KV18-400BZXC?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for DDR II+ operation; when LOW, it selects 1-cycle latency for DDR I compatibility. This pin is sampled synchronously on the rising edge of the K clock and must be stable before the first access cycle. It does not affect write timing or burst length.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to a precision 240 Ω resistor to ground, enabling internal circuitry to adjust output driver strength so that DQ[35:0], CQ, and CQ terminations match 50 Ω transmission lines. Calibration occurs automatically at power-up and can be re-triggered via JTAG command; it compensates for process, voltage, and temperature variations across the operating range.

Can CY7C12701KV18-400BZXC operate with VDDQ = 1.5 V?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, AC timing parameters (e.g., tAC, tHZ) scale linearly per datasheet specifications, and HSTL output swing remains compliant. Core VDD must remain at 1.8 V ± 0.1 V regardless of VDDQ setting, as specified in DC Electrical Characteristics Table.

What is the purpose of the BWS[3:0] signals in a 1 M × 36 configuration?

BWS[3:0] are active-low byte write enables controlling D[8:0], D[17:9], D[26:18], and D[35:27] respectively. They allow partial 36-bit word updates without read-modify-write cycles - for example, writing only timestamp bytes (D[35:27]) while preserving payload data. All BWS signals are sampled synchronously with K/K rising edges during write operations.