Infineon Technologies CY7C1270KV18-400BZXC

Overview

CY7C1270KV18-400BZXC from Cypress Semiconductor is a 36-Mbit (1 M × 36) DDR II+ synchronous pipelined SRAM with 2.5-cycle read latency, 400 MHz clock operation, HSTL I/O interface, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 800 MB/s bandwidth via double-data-rate transfers at 800 Mbps per data pin, supports programmable impedance matching via ZQ, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in memory subsystems used in network packet buffers and baseband processing.

For engineers reviewing the CY7C1270KV18-400BZXC datasheet, CY7C1270KV18-400BZXC pinout, CY7C1270KV18-400BZXC application, or CY7C1270KV18-400BZXC equivalent, key selection criteria include its 1 M × 36 organization, 400 MHz K/K clock frequency, DOFF-controlled DDR I/DDR II+ mode switching, VDD = 1.8 V ± 0.1 V / VDDQ = 1.4–1.8 V dual-supply support, and JTAG 1149.1 test access compliance.

Technical Context

The device implements a two-word burst architecture where each address access retrieves two consecutive 36-bit words on alternating rising edges of complementary K and K clocks. All synchronous inputs (A, R/W, LD, BWS[3:0]) are registered on K's rising edge; write data is latched on both K and K edges, while read data is driven synchronously to both clocks.

It integrates an internal PLL for accurate data placement and echo clocks (CQ/CQ) aligned to output data, eliminating system-level skew compensation. The QVLD signal indicates valid data alignment with CQ/CQ edges, and ZQ enables dynamic output impedance tuning to match 50 Ω system buses via external resistor calibration.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3364B-400BIN and IS61WV102436B-400BLI, CY7C1270KV18-400BZXC uniquely combines DDR II+ burst efficiency, on-die impedance tuning, and echo-clock–assisted timing closure-making it optimal for high-reliability, high-speed memory subsystems where signal integrity and deterministic latency are critical.

Availability

CY7C1270KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, high-speed test instrumentation, and industrial vision control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1270KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1270KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory buffering in networking infrastructure, wireless base stations, and test equipment where deterministic timing and signal integrity at >400 MHz are essential.

FAQ

What is the function of the DOFF pin on CY7C1270KV18-400BZXC?

The DOFF (DLL/PLL Off) pin is an active-low control that disables the internal PLL. When asserted LOW, the device reverts to DDR I timing with 1-cycle read latency and maximum 167 MHz operation. When HIGH (or pulled up), it enables full DDR II+ mode with 2.5-cycle latency and 400 MHz capability. This pin allows hardware-selectable compatibility with legacy controllers without changing firmware or clock tree design.

How does ZQ calibration work, and what external component is required?

ZQ calibration uses an external 240 Ω resistor connected between the ZQ pin and ground to establish a reference impedance. The device measures this resistance and adjusts its output driver strength to achieve 50 Ω (±10%) termination on DQ, CQ, and CQ pins. No other external components are needed-ZQ must never be left floating or tied directly to GND or VDDQ.

Can CY7C1270KV18-400BZXC operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly supports VDDQ = 1.4 V to VDD (1.8 V), including 1.5 V. This allows interoperability with 1.5 V memory controllers while maintaining 1.8 V core stability. Both supplies must be ramped monotonically during power-up, with VDD reaching regulation before VDDQ, per the documented power sequencing requirements.

What is the purpose of the QVLD signal, and how is it timed relative to data?

QVLD (Valid Data Indicator) is an output that asserts HIGH edge-aligned with CQ and CQ to indicate when DQ[35:0] contains valid, stable read data. It eliminates the need for fixed delay margins or complex strobe deskew circuits. QVLD transitions occur within ±0.15 ns of the CQ/CQ rising edges, enabling reliable capture using simple register-based receivers in FPGA or ASIC logic.