Infineon Technologies CY7C1270V18-375BZC

Overview

CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR-II+ synchronous pipelined SRAM with 2.5-cycle read latency, 375 MHz clock operation, and HSTL I/O interface. It delivers 800 Mbps data throughput via double-data-rate transfers synchronized to K/K clocks, features echo clocks (CQ/CQ) and QVLD for precise high-speed data capture, and targets burst-access memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, key selection criteria include its 1M × 36 organization, 375 MHz max frequency, 1.8 V core / 1.4–1.8 V I/O supply range, 165-ball FBGA package, and DDR-II+ timing architecture with DLL-based data alignment.

Technical Context

This SRAM implements a synchronous pipelined architecture where address and control signals are registered on rising edges of complementary K/K clocks. Read data bursts two 36-bit words per access, aligned to CQ/CQ echo clocks with QVLD indicating validity.

The device integrates a Delay Lock Loop (DLL) for accurate internal data placement, supports synchronous self-timed writes with byte-level write select (BWS[3:0]), and uses ZQ calibration for output impedance matching to system bus traces - all operating under 1.8 V core and variable VDDQ (1.4–1.8 V).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1270V18-333BZC, the -375BZC variant delivers 12.5% higher bandwidth and tighter timing margins; versus AS7C33618B-375BIN, it offers native HSTL compatibility and proven echo-clock timing closure in telecom-grade designs.

Availability

CY7C1270V18-375BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1270V18-375BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

The CY7C1270V18 belongs to Cypress's DDR-II+ SRAM product line, engineered specifically for deterministic, low-latency burst memory access in high-throughput packet-processing and signal-integrity-critical applications.

FAQ

What is the function of the ZQ pin on CY7C1270V18-375BZC?

The ZQ pin is an impedance calibration reference input. It connects to an external resistor to ground (typically 240 Ω), enabling the device to auto-calibrate its CQ/CQ echo clocks and DQ[35:0] output drivers to match the system data bus impedance. This ensures consistent signal rise/fall times and minimizes reflections across voltage and temperature variations.

Can CY7C1270V18-375BZC operate without the DLL enabled?

Yes - asserting DOFF (DLL Turn Off) LOW disables the internal Delay Lock Loop. In this mode, the device operates with DDR-I timing and supports frequencies up to 167 MHz. However, the 375 MHz specification and 2.5-cycle latency require DLL operation; disabling it invalidates all DDR-II+ timing parameters in the datasheet.

How does the QVLD signal coordinate with CQ and CQ during read operations?

QVLD is edge-aligned with both CQ and CQ outputs and asserts HIGH precisely when DQ[35:0] contains valid data sampled from the memory array. Its assertion occurs simultaneously with the rising edge of CQ/CQ, providing unambiguous timing for external logic to latch data - eliminating need for separate delay tuning or static timing analysis of data-to-clock skew.

What is the role of BWS[3:0] during a write operation?

BWS[3:0] are active-LOW byte write select inputs that independently enable or mask 9-bit segments of the 36-bit DQ[35:0] bus. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. When a BWS bit is HIGH, the corresponding byte is ignored, preserving prior contents - enabling efficient partial writes without read-modify-write overhead.