Infineon Technologies CY7C1270V18-375BZI

Overview

CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR-II+ SRAM with 2.5-cycle read latency, 375 MHz clock operation, and HSTL I/O interface. It delivers 800 Mbps data transfer via double-data-rate outputs synchronized to K/K clocks and uses echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It is used in network packet buffers, FPGA co-processor caches, and high-throughput test equipment requiring deterministic burst access.

For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, key selection criteria include its 1M × 36 organization, 375 MHz maximum frequency, DLL-enabled timing accuracy, QVLD-valid output signaling, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The CY7C1270V18 implements a synchronous pipelined architecture where address and control signals are registered on rising edges of complementary K/K clocks. Read data bursts two 36-bit words per access, with first word valid 0.45 ns after K edge and second word aligned to next K edge.

It integrates a Delay Lock Loop (DLL) for accurate internal data placement and supports DDR-I fallback mode (≤167 MHz) when DOFF is asserted. Echo clocks CQ/CQ are free-running and phase-aligned to K/K, eliminating system-level skew compensation for data capture.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C1270V18-333BZI, the -375BZI variant delivers 12.5% higher bandwidth and tighter timing margins; versus AS7C33618B-375BIN, it offers simpler DDR timing control and guaranteed data validity via QVLD, reducing FPGA logic overhead by ~15% in capture path implementation.

Availability

CY7C1270V18-375BZI is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and automated test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1270V18-375BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.

The CY7C1270V18 belongs to the DDR-II+ SRAM product line, engineered specifically for deterministic, low-latency burst memory access in high-speed serial and packet-processing systems.

FAQ

What is the function of the ZQ pin on CY7C1270V18-375BZI?

The ZQ pin calibrates the output driver impedance of DQ[35:0], CQ, and CQ to match the system data bus. It must be connected to a 240 Ω resistor to ground; connecting it directly to VDDQ enables minimum impedance mode. Leaving ZQ unconnected or tied to GND violates specification and causes undefined drive strength.

Can CY7C1270V18-375BZI operate without the DLL enabled?

Yes - asserting DOFF low disables the DLL and reverts the device to DDR-I timing mode, supporting up to 167 MHz operation. In this mode, CQ/CQ become simple buffered copies of K/K, and timing parameters shift to DDR-I specifications. Full DDR-II+ performance requires DOFF high (pulled up via ≤10 kΩ resistor).

How does the QVLD signal improve system timing margin?

QVLD transitions synchronously with valid DQ[35:0] data edges, providing a hardware-strobed indication of data readiness. This eliminates reliance on fixed setup/hold windows or manual delay tuning in FPGA capture logic, enabling robust 375 MHz operation across voltage/temperature corners without iterative timing closure.

What is the role of BWS[3:0] in write operations?

BWS[3:0] are active-low byte write enables controlling four independent 9-bit lanes of the 36-bit DQ bus. When a BWS bit is deasserted, the corresponding 9-bit byte is masked during write, preserving existing memory contents in those bits - enabling efficient partial writes without read-modify-write sequences.