Infineon Technologies CY7C1270V18-375BZXC

Overview

CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR-II+ SRAM with 2.5-cycle read latency, 375 MHz clock operation, and HSTL I/O interfaces. It delivers 800 Mbps data transfer via double-data-rate outputs synchronized to K/K clocks and uses echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It serves as a high-bandwidth buffer in network packet processors and FPGA co-processor memory interfaces.

For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, this page provides verified functional identity, validated 165-ball FBGA pin mapping, confirmed 1M × 36 burst architecture, exact VDD/VDDQ supply requirements, and real-world timing behavior including QVLD assertion and DLL-controlled data placement.

Technical Context

The CY7C1270V18 implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary K and K clocks. Its DDR-II+ interface performs 2-word bursts per access, with each word being 36 bits wide, enabling full bus utilization without external multiplexing.

Internal Delay Lock Loop (DLL) aligns output data to echo clocks CQ/CQ with sub-nanosecond jitter control, while QVLD provides edge-aligned validity indication. Write operations use synchronous self-timed internal circuitry and support byte-level granularity via four active-low BWS[3:0] inputs for selective 8-bit writes across the 36-bit data bus.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1270V18-333BZXC, the -375BZXC variant delivers 12.5% higher bandwidth and tighter DLL-controlled timing; versus AS7C336000B-375BIN, it offers simpler timing closure via echo clocks and QVLD, at the expense of not supporting concurrent read/write operations.

Availability

CY7C1270V18-375BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C1270V18-375BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications systems.

The CY7C1270V18 belongs to Cypress's DDR-II+ SRAM product line, engineered specifically for low-latency, high-bandwidth memory expansion in FPGA- and ASIC-based networking and signal processing platforms.

FAQ

What is the function of the DOFF pin on CY7C1270V18-375BZXC?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this mode, the device operates as a DDR-I SRAM with maximum clock frequency reduced to 167 MHz and different timing parameters. For standard DDR-II+ operation at 375 MHz, DOFF must be pulled HIGH via a ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect output drive strength and signal integrity?

ZQ connects to an external precision resistor (typically 100 Ω) to ground, calibrating the output driver impedance of DQ[35:0], CQ, and CQ to 0.2×RQ (i.e., 20 Ω). This ensures consistent HSTL Class I termination across voltage and temperature, minimizing reflections and improving eye diagram margin on high-speed memory buses.

Can CY7C1270V18-375BZXC perform partial writes without reading existing data first?

Yes. Four independent byte write select inputs (BWS[3:0]) allow writing to any subset of the 36-bit data bus without prior read-modify-write. Each BWS bit enables one 8-bit lane: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Unselected bytes retain their prior values.

Is the CY7C1270V18-375BZXC pin-compatible with other devices in the CY7C12xxV18 family?

Yes, all CY7C12xxV18 variants share identical 165-ball FBGA packaging and pin assignments. However, data bus width differs: CY7C1266V18 uses DQ[7:0], CY7C1277V18 uses DQ[8:0], CY7C1268V18 uses DQ[17:0], and CY7C1270V18 uses DQ[35:0]. Unused DQ pins on narrower variants must be left unconnected or tied LOW per design guidelines.