Infineon Technologies CY7C1270V18-400BZC

Overview

CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR-II+ SRAM with 2-word burst architecture, 2.5-cycle read latency, and dual-clock (K/K̄) DDR timing interface. It operates at up to 400 MHz clock frequency (800 MHz data rate), uses 1.8 V core supply (VDD) and 1.4–1.8 V I/O supply (VDDQ), and is packaged in a 165-ball FBGA (15 × 17 × 1.4 mm) for high-bandwidth memory buffering in network packet processors.

For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, this device is selected for low-latency, burst-mode synchronous memory expansion where precise echo-clock–aligned data capture (CQ/CQ̄), QVLD-driven output validation, and HSTL-compatible 36-bit wide I/O are required in telecom and switching ASIC interfaces.

Technical Context

The CY7C1270V18 implements a DDR-II+ architecture with synchronous pipelined access: addresses are latched on alternate rising edges of K/K̄, while read data is driven on both K and K̄ rising edges with 2.5-cycle latency. Its internal organization is two 512K × 36 arrays, supporting burst-2 sequential reads/writes per address load.

It integrates a Delay Lock Loop (DLL) for accurate data placement relative to echo clocks CQ/CQ̄, supports byte-level write masking via four active-low BWS[3:0] inputs, and includes JTAG 1149.1 test access, ZQ impedance calibration, and DOFF-controlled DLL disable for DDR-I fallback mode (≤167 MHz).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with CY7C1271V18 and AS7C33618B, the CY7C1270V18 uniquely balances 400 MHz DDR-II+ performance with integrated echo-clock timing and HSTL compatibility-making it optimal for FPGA-based systems needing plug-and-play DDR memory interfacing without custom clock management.

Availability

CY7C1270V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, ASIC co-processor cache, and high-speed test equipment requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1270V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The CY7C1270V18 belongs to Cypress's DDR-II+ SRAM product line, engineered specifically for deterministic, low-latency memory expansion in packet-processing and switching ASIC subsystems where echo-clock–driven timing eliminates board-level skew compensation.

FAQ

What is the minimum supported VDDQ voltage for CY7C1270V18?

The CY7C1270V18 supports VDDQ from 1.4 V to 1.8 V, as specified in the official datasheet (Document 001-06347 Rev. *D). Operation below 1.4 V is not guaranteed and may cause HSTL output drive failure or timing violations. The 1.4 V lower bound enables compatibility with 1.5 V system rails while maintaining noise margin.

Can CY7C1270V18 operate without connecting the ZQ pin?

No. The ZQ pin must be connected either to a 240 Ω resistor to ground (for impedance calibration) or directly to VDDQ (for minimum output drive strength). Leaving ZQ unconnected or tied to GND violates the absolute maximum ratings and will result in undefined output impedance, causing signal integrity failures on DQ and CQ lines.

How does the DOFF pin affect timing behavior?

When DOFF is pulled LOW, the internal DLL is disabled and the device reverts to DDR-I timing mode with maximum clock frequency reduced to 167 MHz. In this mode, data output timing shifts to fixed delays relative to K/K̄ rather than DLL-aligned CQ/CQ̄, requiring redesign of capture logic and invalidating QVLD alignment guarantees.

Is CY7C1270V18 pin-compatible with CY7C1268V18?

No. Although both use the same 165-ball FBGA package, their pin assignments differ significantly: CY7C1270V18 allocates 36 DQ pins (DQ[35:0]) and four BWS inputs, while CY7C1268V18 uses 18 DQ pins (DQ[17:0]) and two BWS inputs. Direct replacement would cause I/O conflicts and functional failure without PCB redesign.