Infineon Technologies CY7C1270V18-400BZXC
- Part No.:
- CY7C1270V18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1270V18-400BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with DDR-II+ architecture, operating at 400 MHz clock frequency and delivering 800 MHz effective data rate via double-data-rate interface. It features 2.5-cycle read latency, HSTL I/O with variable drive strength, and dual echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. Used in network packet buffers and high-throughput FPGA-attached memory interfaces.
For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, key selection criteria include its 1M × 36 organization, 1.8V core / 1.4–1.8V I/O supply range, JTAG 1149.1 test port, DLL-enabled timing alignment, and 165-ball FBGA package compatibility with depth-expanded memory designs.
Technical Context
This SRAM implements a synchronous burst architecture where all address, control, and data transfers are edge-aligned to K and K clocks. Read and write operations are fully pipelined, with addresses latched on alternating rising edges of K/K and data transferred on both edges-enabling continuous 2-word bursts without bus turnaround overhead.
The device integrates a Delay Lock Loop (DLL) for sub-cycle output skew control, echo clocks synchronized to input clocks for simplified board-level timing closure, and QVLD signal for cycle-accurate data validity indication. Byte write select inputs (BWS[3:0]) enable granular 8-bit write masking across the 36-bit data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 36 Mbit (1M × 36), enabling single-chip 36-bit wide memory interface without width expansion |
| Max Clock Frequency | 400 MHz - supports sustained 800 MT/s data throughput with DDR interface |
| Read Latency | 2.5 clock cycles - determines minimum read-to-read interval and pipeline depth in controller logic |
| Core Supply (VDD) | 1.8 V ± 0.1 V - defines power rail tolerance and noise margin for internal SRAM array stability |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - allows interoperability with 1.5V HSTL-15 or 1.8V HSTL-18 systems |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides thermal and electrical performance suitable for high-speed memory modules |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing and system-level debug without additional probe points |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-245 footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; sampled on rising edges of both K and K during writes, driven on same edges during reads with echo-clock alignment |
| K / K | Differential clock inputs | Primary timing references for all synchronous operations; K used for address/control latching, both used for data transfer |
| CQ / CQ | Synchronous echo clock outputs | Free-running clocks phase-aligned to K/K; eliminate need for external strobes in high-speed data capture |
| QVLD | Data validity indicator | Asserted edge-aligned with CQ/CQ to signal when DQ[35:0] contains valid read data |
| BWS[3:0] | Byte write select inputs | Active-low signals controlling which 8-bit bytes are written - BWS0=D[8:0], BWS1=D[17:9], BWS2=D[26:18], BWS3=D[35:27] |
| LD | Load command input | Latches address and R/W state on rising edge of K; initiates each 2-word burst transaction |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune CQ/CQ/DQ output driver impedance to 0.2 × RQ |
| DOFF | DLL disable control | Active-low pin; when grounded, disables DLL and reverts device to DDR-I mode (max 167 MHz) |
Key Features
| Feature | Design Value |
|---|---|
| 2-Word Burst Architecture | Reduces address bus toggling by 50% versus single-word access, lowering system EMI and routing complexity |
| Delay Lock Loop (DLL) | Eliminates output clock-to-data skew across process/voltage/temperature, enabling reliable 400 MHz operation |
| HSTL I/O with Variable Drive | Supports impedance-matched signaling at 800 MT/s while allowing drive strength tuning via ZQ calibration |
| Synchronous Self-Timed Writes | On-chip write timing control ensures consistent setup/hold margins independent of external controller timing variation |
| JTAG 1149.1 Test Access Port | Enables production test, in-system verification, and boundary-scan diagnostics without dedicated test fixtures |
Applications
| Network Packet Buffer | FPGA Co-Processor Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer between MAC and traffic manager ASICs. Use Value: 800 MT/s DDR interface sustains full line-rate buffering with zero wait states; 2.5-cycle latency minimizes packet queuing delay. | Use Scenario: Providing scratchpad memory for real-time DSP kernels running on Xilinx Ultrascale+ or Intel Stratix 10 FPGAs. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced directly to FPGA memory controller IP with matched echo clocks. Use Value: CQ/CQ outputs simplify PCB layout and timing closure; QVLD eliminates need for complex data-valid handshaking logic. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
Use Scenario: Supporting channel estimation and FFT buffering in LTE/5G baseband units requiring deterministic memory access. IC Role / Device Role / Timing Role: Deterministic-latency memory for time-critical signal processing pipelines with strict jitter budgets. Use Value: DLL ensures sub-nanosecond output jitter; 1.8V core reduces dynamic power vs. older 2.5V QDR parts. | Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with >500 MHz sampling clocks. IC Role / Device Role / Timing Role: Deep, wide memory buffer capturing parallel digital samples from multi-channel ADCs. Use Value: 1M × 36 organization matches 36-bit parallel bus architectures; FBGA package supports dense, low-inductance routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1270V18-333BZXC | Same 1M × 36 organization and pinout, but rated for 333 MHz max clock (666 MT/s) | Lower bandwidth requirement; reduced power consumption (1080 mA vs. 1280 mA at 400 MHz) | Select when system clock is ≤333 MHz and thermal budget is constrained |
| AS7C336400B-400BIN | 36-Mbit QDR SRAM (1M × 36), 400 MHz, but uses QDR-II protocol with separate read/write ports and no DLL | Requires dual-port controller logic; lacks echo clocks and QVLD, increasing timing validation effort | Choose only if existing design already uses QDR-II controllers and requires true simultaneous read/write capability |
Compared with CY7C1270V18-333BZXC, the -400BZXC delivers 20% higher bandwidth and tighter timing margins via DLL; versus AS7C336400B-400BIN, it simplifies timing closure with echo clocks and QVLD but lacks true dual-port concurrency.
Availability
CY7C1270V18-400BZXC is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1270V18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.
The CY7C12xxV18 family targets high-speed memory subsystems demanding deterministic latency, DDR bandwidth, and robust signal integrity - specifically engineered for FPGA- and ASIC-based infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C1270V18?
The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this mode, the device operates as a DDR-I SRAM with maximum clock frequency of 167 MHz and relaxed timing parameters. For full 400 MHz DDR-II+ operation, DOFF must be tied HIGH via ≤10 kΩ pull-up resistor to VDDQ.
How does the ZQ pin affect output driver impedance?
ZQ connects to an external resistor (RQ) to ground, calibrating CQ, CQ, and DQ output drivers to 0.2 × RQ. This achieves precise HSTL-compatible impedance matching (e.g., 25 Ω for 125 Ω RQ). If RQ is omitted, ZQ may be tied to VDDQ to enable minimum-impedance mode, but not to VSS or left floating.
Can CY7C1270V18 operate with only the K clock?
No - K and K are complementary differential clocks both required for normal DDR-II+ operation. The device uses rising edges of both clocks to latch inputs and drive outputs. Omitting K violates timing specifications and prevents functional operation; K alone cannot substitute for the K/K pair.
What is the purpose of the QVLD signal in read transactions?
QVLD is asserted edge-aligned with CQ and CQ to indicate when DQ[35:0] carries valid read data. It eliminates the need for fixed delay-based sampling or complex strobe recovery circuits, allowing receivers to gate data capture precisely on QVLD assertion - critical for reliable 800 MT/s operation.
CY7C1270V18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1270V18-400BZXC FAQ
1.How can I place an order for CY7C1270V18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1270V18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1270V18-400BZXC reliable?
The price and inventory of CY7C1270V18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1270V18-400BZXC is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1270V18-400BZXC transactions.
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Once your CY7C1270V18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1270V18-400BZXC?
For technical support, including CY7C1270V18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1270V18-400BZXC requirements.
6.How does Aetrix verify that CY7C1270V18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1270V18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1270V18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1270V18-400BZXC?
All CY7C1270V18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1270V18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1270V18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C1270V18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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