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Infineon Technologies CY7C1270V18-400BZXC

Part No.:
CY7C1270V18-400BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1270V18-400BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,719

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Product details

Overview

CY7C1270V18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with DDR-II+ architecture, operating at 400 MHz clock frequency and delivering 800 MHz effective data rate via double-data-rate interface. It features 2.5-cycle read latency, HSTL I/O with variable drive strength, and dual echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. Used in network packet buffers and high-throughput FPGA-attached memory interfaces.

For engineers reviewing the CY7C1270V18 datasheet, CY7C1270V18 pinout, CY7C1270V18 application, or CY7C1270V18 equivalent, key selection criteria include its 1M × 36 organization, 1.8V core / 1.4–1.8V I/O supply range, JTAG 1149.1 test port, DLL-enabled timing alignment, and 165-ball FBGA package compatibility with depth-expanded memory designs.

Technical Context

This SRAM implements a synchronous burst architecture where all address, control, and data transfers are edge-aligned to K and K clocks. Read and write operations are fully pipelined, with addresses latched on alternating rising edges of K/K and data transferred on both edges-enabling continuous 2-word bursts without bus turnaround overhead.

The device integrates a Delay Lock Loop (DLL) for sub-cycle output skew control, echo clocks synchronized to input clocks for simplified board-level timing closure, and QVLD signal for cycle-accurate data validity indication. Byte write select inputs (BWS[3:0]) enable granular 8-bit write masking across the 36-bit data bus.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization36 Mbit (1M × 36), enabling single-chip 36-bit wide memory interface without width expansion
Max Clock Frequency400 MHz - supports sustained 800 MT/s data throughput with DDR interface
Read Latency2.5 clock cycles - determines minimum read-to-read interval and pipeline depth in controller logic
Core Supply (VDD)1.8 V ± 0.1 V - defines power rail tolerance and noise margin for internal SRAM array stability
I/O Supply (VDDQ)1.4 V to 1.8 V - allows interoperability with 1.5V HSTL-15 or 1.8V HSTL-18 systems
Package165-ball FBGA (15 × 17 × 1.4 mm) - provides thermal and electrical performance suitable for high-speed memory modules
JTAG SupportIEEE 1149.1 compliant - enables boundary-scan testing and system-level debug without additional probe points

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-245 footprint.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Synchronous bidirectional data bus36-bit DDR data path; sampled on rising edges of both K and K during writes, driven on same edges during reads with echo-clock alignment
K / KDifferential clock inputsPrimary timing references for all synchronous operations; K used for address/control latching, both used for data transfer
CQ / CQSynchronous echo clock outputsFree-running clocks phase-aligned to K/K; eliminate need for external strobes in high-speed data capture
QVLDData validity indicatorAsserted edge-aligned with CQ/CQ to signal when DQ[35:0] contains valid read data
BWS[3:0]Byte write select inputsActive-low signals controlling which 8-bit bytes are written - BWS0=D[8:0], BWS1=D[17:9], BWS2=D[26:18], BWS3=D[35:27]
LDLoad command inputLatches address and R/W state on rising edge of K; initiates each 2-word burst transaction
ZQOutput impedance calibrationConnects to external resistor to ground to tune CQ/CQ/DQ output driver impedance to 0.2 × RQ
DOFFDLL disable controlActive-low pin; when grounded, disables DLL and reverts device to DDR-I mode (max 167 MHz)

Key Features

FeatureDesign Value
2-Word Burst ArchitectureReduces address bus toggling by 50% versus single-word access, lowering system EMI and routing complexity
Delay Lock Loop (DLL)Eliminates output clock-to-data skew across process/voltage/temperature, enabling reliable 400 MHz operation
HSTL I/O with Variable DriveSupports impedance-matched signaling at 800 MT/s while allowing drive strength tuning via ZQ calibration
Synchronous Self-Timed WritesOn-chip write timing control ensures consistent setup/hold margins independent of external controller timing variation
JTAG 1149.1 Test Access PortEnables production test, in-system verification, and boundary-scan diagnostics without dedicated test fixtures

Applications

Network Packet BufferFPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer between MAC and traffic manager ASICs.

Use Value: 800 MT/s DDR interface sustains full line-rate buffering with zero wait states; 2.5-cycle latency minimizes packet queuing delay.

Use Scenario: Providing scratchpad memory for real-time DSP kernels running on Xilinx Ultrascale+ or Intel Stratix 10 FPGAs.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced directly to FPGA memory controller IP with matched echo clocks.

Use Value: CQ/CQ outputs simplify PCB layout and timing closure; QVLD eliminates need for complex data-valid handshaking logic.

Telecom Baseband ProcessingHigh-Speed Test Equipment Memory

Use Scenario: Supporting channel estimation and FFT buffering in LTE/5G baseband units requiring deterministic memory access.

IC Role / Device Role / Timing Role: Deterministic-latency memory for time-critical signal processing pipelines with strict jitter budgets.

Use Value: DLL ensures sub-nanosecond output jitter; 1.8V core reduces dynamic power vs. older 2.5V QDR parts.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with >500 MHz sampling clocks.

IC Role / Device Role / Timing Role: Deep, wide memory buffer capturing parallel digital samples from multi-channel ADCs.

Use Value: 1M × 36 organization matches 36-bit parallel bus architectures; FBGA package supports dense, low-inductance routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1270V18-333BZXCSame 1M × 36 organization and pinout, but rated for 333 MHz max clock (666 MT/s)Lower bandwidth requirement; reduced power consumption (1080 mA vs. 1280 mA at 400 MHz)Select when system clock is ≤333 MHz and thermal budget is constrained
AS7C336400B-400BIN36-Mbit QDR SRAM (1M × 36), 400 MHz, but uses QDR-II protocol with separate read/write ports and no DLLRequires dual-port controller logic; lacks echo clocks and QVLD, increasing timing validation effortChoose only if existing design already uses QDR-II controllers and requires true simultaneous read/write capability

Compared with CY7C1270V18-333BZXC, the -400BZXC delivers 20% higher bandwidth and tighter timing margins via DLL; versus AS7C336400B-400BIN, it simplifies timing closure with echo clocks and QVLD but lacks true dual-port concurrency.

Availability

CY7C1270V18-400BZXC is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1270V18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

The CY7C12xxV18 family targets high-speed memory subsystems demanding deterministic latency, DDR bandwidth, and robust signal integrity - specifically engineered for FPGA- and ASIC-based infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1270V18?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this mode, the device operates as a DDR-I SRAM with maximum clock frequency of 167 MHz and relaxed timing parameters. For full 400 MHz DDR-II+ operation, DOFF must be tied HIGH via ≤10 kΩ pull-up resistor to VDDQ.

How does the ZQ pin affect output driver impedance?

ZQ connects to an external resistor (RQ) to ground, calibrating CQ, CQ, and DQ output drivers to 0.2 × RQ. This achieves precise HSTL-compatible impedance matching (e.g., 25 Ω for 125 Ω RQ). If RQ is omitted, ZQ may be tied to VDDQ to enable minimum-impedance mode, but not to VSS or left floating.

Can CY7C1270V18 operate with only the K clock?

No - K and K are complementary differential clocks both required for normal DDR-II+ operation. The device uses rising edges of both clocks to latch inputs and drive outputs. Omitting K violates timing specifications and prevents functional operation; K alone cannot substitute for the K/K pair.

What is the purpose of the QVLD signal in read transactions?

QVLD is asserted edge-aligned with CQ and CQ to indicate when DQ[35:0] carries valid read data. It eliminates the need for fixed delay-based sampling or complex strobe recovery circuits, allowing receivers to gate data capture precisely on QVLD assertion - critical for reliable 800 MT/s operation.

CY7C1270V18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1270V18-400BZXC FAQ

1.How can I place an order for CY7C1270V18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1270V18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1270V18-400BZXC reliable?

The price and inventory of CY7C1270V18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1270V18-400BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1270V18-400BZXC transactions.

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CY7C1270V18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1270V18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1270V18-400BZXC?

For technical support, including CY7C1270V18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1270V18-400BZXC requirements.

6.How does Aetrix verify that CY7C1270V18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1270V18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1270V18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1270V18-400BZXC?

All CY7C1270V18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1270V18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1270V18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1270V18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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