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Infineon Technologies CY7C1292DV18-167BZC

Part No.:
CY7C1292DV18-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1292DV18-167BZC.pdf
Description:
IC SRAM 9MBIT PAR 167MHZ 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,690

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Product details

Overview

CY7C1292DV18-167BZC from Cypress Semiconductor is a 9-Mbit QDR-II™ SRAM with 512K × 18 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It features separate read/write ports, DDR interfaces on both ports (1000 Mbps effective data rate per port), and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1292DV18-167BZC datasheet, CY7C1292DV18-167BZC pinout, CY7C1292DV18-167BZC application, or CY7C1292DV18-167BZC equivalent, this device supports concurrent read/write transactions without bus turnaround, requires precise K/K and C/C clock alignment, implements byte-write select (BWS0/BWS1), and delivers full data coherency in depth-expanded memory systems.

Technical Context

The CY7C1292DV18-167BZC implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Read address latching occurs on the rising edge of K; write address latching on the rising edge of K. Both ports use double data rate transfers - two 18-bit words per access - with output timing referenced to C and C clocks.

It integrates a Delay Lock Loop (DLL) for accurate data placement, supports JTAG 1149.1 boundary scan via TDI/TDO/TCK/TMS, and enables impedance tuning via ZQ pin connected to external resistor-to-ground. The device operates in dual-clock mode by default but supports single-clock mode when C and C are strapped HIGH at power-on.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 9 Mbit (512K × 18)
Max Clock Frequency 167 MHz - defines maximum sustained burst transaction rate (334 MT/s effective)
Core Supply Voltage 1.8 V ± 0.1 V - powers internal logic and array; strict tolerance required for timing stability
I/O Supply Range VDDQ = 1.4 V to 1.8 V - sets HSTL-compatible output drive strength and input threshold
Data Interface DDR on both read and write ports - enables 2-word burst per clock cycle without direction control
Package 165-ball FBGA (13 × 15 × 1.4 mm) - supports high-density PCB layout with controlled impedance routing
Timing Architecture Synchronous pipelined with DLL - ensures <±50 ps output skew across temperature/voltage

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant lead-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K (first word) and K (second word); supports partial writes via BWS0/BWS1
Q[17:0] Synchronous read data outputs Driven on rising edges of C and C; automatically tri-stated after burst completion when RPS deasserted
K / K Positive/negative write/read clock inputs Rising edges latch all synchronous inputs (address, WPS/RPS, BWS); define write initiation and address capture timing
C / C Positive/negative output clocks Reference timing for Q[17:0] output valid windows; used with CQ/CQ to deskew flight time across memory subsystems
CQ / CQ Read data echo clocks Free-running, DLL-synchronized copies of C/C; simplify source-synchronous capture at controller side
ZQ Output impedance calibration input Connects to external resistor to ground to tune Q[17:0] and CQ/CQ output driver impedance to 0.2 × RQ
RPS / WPS Read/Write Port Select (active LOW) Enable independent port activation; deassertion allows pending operation completion before automatic tri-state
BWS0 / BWS1 Byte Write Select (active LOW) Control D[8:0] and D[17:9] respectively; enable selective 9-bit byte updates without full-word overwrite

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround delay and contention; enables true concurrent access in packet-forwarding engines
2-word DDR burst per access Delivers 36 bits per clock cycle at 167 MHz → 6 Gbps aggregate bandwidth per port
Echo clock support (CQ/CQ) Enables deterministic source-synchronous capture at FPGA/ASIC receivers without complex trace-length matching
On-chip DLL Maintains <±50 ps data-to-clock alignment across -40°C to +85°C and 1.7 V to 1.9 V VDD
HSTL-compatible I/O Meets JEDEC JESD8-15A for 1.5 V HSTL Class I; supports 1.4–1.8 V VDDQ for flexible system-level voltage scaling

Applications

Network Packet Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-10 ns latency requirements.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to 167 MHz system clock domain.

Use Value: Concurrent read/write eliminates arbitration stalls; 2-word burst matches typical header+payload segmentation; echo clocks align data capture at switch ASIC inputs.

Use Scenario: Providing low-latency, deterministic memory for crossbar arbitration tables and queue depth tracking in multi-gigabit switch fabrics.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM serving as lookup table storage for fabric routing decisions, interfaced to FPGA-based scheduler logic.

Use Value: Full data coherency ensures latest forwarding rules are always read; byte-write capability enables atomic update of individual queue counters without full-table rewrite.

Telecom Line Card Buffering Test Equipment Pattern Memory

Use Scenario: Holding real-time traffic statistics and jitter buffers in OC-192/STM-64 line interface cards requiring deterministic 167 MHz throughput.

IC Role / Device Role / Timing Role: High-bandwidth SRAM buffering incoming SONET frames while simultaneously feeding out processed streams to backplane interface.

Use Value: Independent ports allow simultaneous frame ingestion and egress scheduling; DLL ensures stable setup/hold margins under temperature variation across card edge.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) where pattern depth exceeds on-chip memory capacity.

IC Role / Device Role / Timing Role: External memory resource accessed by ATE pattern generator at 167 MHz to sustain >3 Gbps vector streaming rates.

Use Value: Burst architecture matches ATE's 2-word parallel vector format; JTAG support enables in-system verification and fault isolation during production test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L167BG 512K × 18, 167 MHz, 2.5 V core, HSTL-I I/O, same FBGA-165 package Requires 2.5 V core supply; incompatible with 1.8 V-only systems; higher static current (650 mA vs. 500 mA) Select only if existing design uses IDT's 2.5 V infrastructure and requires drop-in footprint compatibility
ISSI IS61WV102418B-167BLI 1M × 18, 167 MHz, 1.8 V core, SSTL-2 I/O, 165-ball FBGA (13 × 15 mm) SSTL-2 outputs require different termination; no echo clocks or DLL; lacks BWS granularity Choose for cost-sensitive applications where echo clock simplification is unnecessary and SSTL-2 interface is already supported

Compared with IDT72T3615L167BG and IS61WV102418B-167BLI, the CY7C1292DV18-167BZC uniquely combines 1.8 V core operation, integrated DLL, echo clocks, and byte-write select - making it optimal for new 1.8 V high-speed networking designs requiring precise timing control and partial-write efficiency.

Availability

CY7C1292DV18-167BZC is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and telecom line card buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1292DV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.

The CY7C1292DV18 belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure and high-speed test equipment.

FAQ

What is the minimum VDDQ voltage supported for reliable operation?

The CY7C1292DV18-167BZC supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL Class I specifications and causes output drive strength degradation and input threshold shift, risking timing violations and data corruption. Designers must maintain VDDQ ≥ 1.4 V across all operating conditions.

Can C and C be driven from the same differential clock source as K and K?

No - C and C must be generated independently from K and K to achieve optimal deskew. While they may share the same PLL source, C/C require dedicated routing with matched length and phase to Q[17:0] and CQ/CQ signals. Using K/K as C/C substitutes disables echo clock functionality and increases output timing uncertainty beyond AC specification limits.

How does DOFF affect DLL behavior and timing parameters?

Asserting DOFF (LOW) disables the internal DLL, reverting output timing to fixed delay paths. This increases clock-to-output skew to ±150 ps (vs. ±50 ps with DLL enabled) and invalidates all DLL-dependent AC parameters in the datasheet. DOFF should only be used for debug or legacy compatibility - not in production timing-critical systems.

Is ZQ pin required to be connected for functional operation?

Yes - ZQ must be connected either to an external resistor to ground (for impedance tuning) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or tied to VSS violates the absolute maximum ratings and causes undefined output driver behavior, including excessive current draw and signal integrity failure on Q[17:0] and CQ/CQ lines.

CY7C1292DV18-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1292DV18-167BZC FAQ

1.How can I place an order for CY7C1292DV18-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1292DV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1292DV18-167BZC reliable?

The price and inventory of CY7C1292DV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1292DV18-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1292DV18-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1292DV18-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1292DV18-167BZC?

CY7C1292DV18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1292DV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1292DV18-167BZC?

For technical support, including CY7C1292DV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1292DV18-167BZC requirements.

6.How does Aetrix verify that CY7C1292DV18-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1292DV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1292DV18-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1292DV18-167BZC?

All CY7C1292DV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1292DV18-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1292DV18-167BZC part is unused and in its original packaging.

Return procedure for CY7C1292DV18-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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