Infineon Technologies CY7C1294DV18-167BZC

Overview

CY7C1294DV18-167BZC from Cypress Semiconductor is a 9-Mbit QDR-II™ synchronous SRAM with 256K × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (VDD), 1.4–1.8 V I/O supply (VDDQ), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It implements dual independent read/write ports with DDR interfaces, 2-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers and switch fabric memory.

For engineers reviewing the CY7C1294DV18-167BZC datasheet, CY7C1294DV18-167BZC pinout, CY7C1294DV18-167BZC application, or CY7C1294DV18-167BZC equivalent, key selection criteria include burst depth (2-word), port independence (RPS/WPS control), DLL-enabled timing accuracy, HSTL-compatible output drive, and JTAG 1149.1 test access support.

Technical Context

The CY7C1294DV18-167BZC uses QDR-II architecture with physically separate read and write data paths-Q[35:0] outputs and D[35:0] inputs-eliminating bus turnaround and enabling true concurrent read/write operations. Its internal 128K × 36 dual-array structure supports depth expansion via RPS and WPS signals, with address multiplexing across both ports using A[16:0].

Timing is governed by four dedicated clocks: K/K for write/address latching and C/C for read data output, all referenced to rising edges only; CQ/CQ echo clocks are phase-aligned to C/C to simplify high-speed capture at the controller. The integrated Delay Lock Loop (DLL) ensures precise data placement relative to output clocks, critical for >500 Mbps DDR operation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant lead-free option available. Pin pitch: 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36115L10BG and IS61WV102432BLL-167BLI, CY7C1294DV18-167BZC uniquely delivers true concurrent read/write at 167 MHz with DLL-calibrated timing and echo-clock–assisted capture-making it the only option meeting strict latency and bandwidth requirements in QDR-II–based switch fabrics.

Availability

CY7C1294DV18-167BZC is available at Aetrix Electronics and suitable for high-speed network switch fabric, telecom line card buffer memory, baseband processing in 4G LTE eNodeB, and real-time video frame buffering requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1294DV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.

CY7C1294DV18 belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the ZQ pin on CY7C1294DV18-167BZC?

The ZQ pin is an impedance calibration input that connects to an external resistor to ground (RQ). It enables on-die tuning of the output driver impedance for Q[35:0] and D[35:0] pins to 0.2 × RQ, ensuring optimal signal integrity on matched-impedance PCB traces. It must never be left floating or tied directly to GND.

Can CY7C1294DV18-167BZC operate in single-clock mode?

Yes. By tying C and C HIGH at power-on, the device enters single-clock mode where K/K clocks control both input and output registers. All timing parameters remain unchanged, and the DLL continues to operate-this mode simplifies clock distribution but forfeits independent read/write clock deskew capability.

How does the DOFF pin affect timing behavior?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. This changes AC timing parameters significantly-setup/hold margins widen, and CQ/CQ become unaligned with C/C. Operation with DOFF asserted is only recommended for validation or low-speed debug; full datasheet timing applies only with DOFF HIGH.

What is the role of BWS[3:0] in write operations?

BWS[3:0] are synchronous byte write select inputs that determine which 9-bit bytes of the 36-bit D[35:0] word are written during each 2-word burst. Each BWS bit controls one 9-bit byte (e.g., BWS0 → D[8:0]); deasserting a BWS bit preserves existing memory contents in that byte, enabling efficient read-modify-write without full-word overwrite.