Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1306CV25-167BZC

Part No.:
CY7C1306CV25-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1306CV25-167BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,569

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1306CV25-167BZC from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with QDR™ architecture, featuring independent read/write ports, 167 MHz operation, 2.5 ns clock-to-valid access time, and DDR interfaces on both ports for 333 MHz effective data transfer. It serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring concurrent burst reads/writes without bus turnaround.

For engineers reviewing the CY7C1306CV25-167BZC datasheet, CY7C1306CV25-167BZC pinout, CY7C1306CV25-167BZC application, or CY7C1306CV25-167BZC equivalent, key selection criteria include its dual-clock DDR timing control (K/K and C/C), HSTL I/O compatibility (1.4–1.9 V), JTAG debug support, and 165-ball FBGA package with depth expansion via RPS/WPS and BWS[3:0].

Technical Context

The device implements true QDR architecture with physically separate read and write data paths, eliminating bus contention and enabling simultaneous access to the same memory location - writes initiated on K's rising edge forward data to subsequent reads on C's rising edge. Its internal organization comprises two 256K × 36 arrays, accessed via multiplexed 18-bit address bus latched separately on K (read) and K (write) edges.

All synchronous inputs (D[35:0], RPS, WPS, BWS[3:0], A[17:0]) are registered on K/K rising edges; all outputs (Q[35:0]) are registered on C/C rising edges. Output impedance is programmable via ZQ pin tied to external resistor or VDDQ, supporting system-level HSTL bus termination matching.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36) - supports 36-bit wide burst transfers per access cycle
Max Clock Frequency 167 MHz - enables 333 MT/s effective throughput on both read and write DDR interfaces
Access Time 2.5 ns clock-to-valid - guarantees deterministic read latency referenced to C/C rising edge
I/O Standard HSTL Class I - compatible with 1.5V/1.8V systems; output drive strength configurable via ZQ
Core Supply 2.5 V ± 0.2 V - powers internal logic and array; decoupling critical for jitter-sensitive QDR timing
Package 165-ball FBGA (13 × 15 × 1.4 mm) - RoHS-compliant, thermal pad not present, requires controlled-impedance PCB layout
Burst Length 2-word fixed burst - delivers two sequential 36-bit words per read/write command, no configuration required

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant. Thermal pad absent; mechanical mounting relies on perimeter solder balls only.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input Latched on rising edges of K (low word) and K (high word); supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output Driven on rising edges of C and C; tri-stated automatically when RPS deasserted or after burst completion
RPS / WPS Read/Write port select Active-low synchronous enable; sampled on K rising edge; enables depth expansion by disabling individual ports
BWS[3:0] Byte write select Four independent active-low controls; each selects 9-bit byte (D[8:0]–D[35:27]); unselected bytes retain prior data
K / K Input clocks (positive/negative) Drive all synchronous inputs; K used for address/data capture on write, K for read address latch
C / C Output clocks (positive/negative) Control Q[35:0] timing; deskew capability via differential routing minimizes flight-time mismatch across memory subsystem
ZQ Output impedance calibration Connects to external 100 Ω resistor to GND to set Q[35:0] output impedance to 20 Ω; tie to VDDQ for minimum impedance mode
TCK/TMS/TDI/TDO JTAG boundary-scan interface IEEE 1149.1 compliant; supports device-level test, ID code read, and optional debug features in system

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround delay and arbitration logic; enables full-duplex memory access in packet buffering applications
2.5 ns clock-to-valid timing Guarantees sub-cycle read latency at 167 MHz - critical for real-time traffic shaping and scheduler coherency
Programmable HSTL output impedance ZQ-controlled 20 Ω or lower drive matches typical 50 Ω trace impedance, reducing signal reflections on high-speed buses
Concurrent transaction support Allows simultaneous read from one address and write to another - or even same address with write-forwarding - no pipeline stalls
Depth expansion via port selects RPS/WPS enable stacking multiple devices without external address decoding logic; simplifies memory subsystem scalability

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency FIFO between MAC and traffic manager; K/K and C/C clocks synchronized to line-rate timing domains.

Use Value: Concurrent 36-bit reads and writes at 333 MT/s eliminate backpressure during bursty traffic, sustaining 10 Gbps+ throughput without packet loss.

Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers with strict jitter tolerance.

IC Role / Device Role / Timing Role: High-reliability buffer memory interfacing with SerDes PHYs; HSTL I/O ensures signal integrity over 15 cm traces at 167 MHz.

Use Value: 2.5 ns access time and write-forwarding guarantee deterministic latency for OAM&P cell processing, meeting ITU-T G.823 jitter specs.

Baseband Processing in 4G LTE eNodeB High-Speed Test Equipment Memory

Use Scenario: Temporary storage of IQ samples between digital downconverters and FFT engines in wireless base stations.

IC Role / Device Role / Timing Role: Burst-access memory bridging asynchronous processing blocks; RPS/WPS controlled by FPGA state machine for precise timing alignment.

Use Value: 2-word burst mode matches FFT bin size; DDR interface doubles effective bandwidth without increasing clock frequency or power.

Use Scenario: Pattern memory in automated test equipment generating high-speed digital vectors for ASIC validation.

IC Role / Device Role / Timing Role: Deterministic waveform storage element; ZQ calibration ensures repeatable edge placement accuracy across temperature.

Use Value: Programmable output impedance and 165-ball FBGA footprint enable <10 ps skew control across 36-bit data bus - essential for >500 MHz vector rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L167BG Same 512K × 36 density, 167 MHz, but uses QDR-II architecture with 1.8 V core; lacks ZQ pin and JTAG Requires different power sequencing and no on-board impedance tuning; suitable where legacy QDR-II compatibility is mandated Select if migrating from IDT-based designs or when 1.8 V core supply is already deployed
ISSI IS61WV102436B Asynchronous 1M × 36 SRAM; no DDR, no separate clocks; 15 ns access, 3.3 V only; no BWS or RPS/WPS Cannot support concurrent read/write; limited to low-throughput buffering where timing determinism is non-critical Choose only for cost-sensitive, non-real-time applications where QDR features are unused

Compared with IDT72T36150L167BG and IS61WV102436B, CY7C1306CV25-167BZC uniquely delivers deterministic 2.5 ns latency, integrated ZQ calibration, and JTAG visibility - making it optimal for new designs demanding jitter-controlled, scalable, and debuggable memory subsystems.

Availability

CY7C1306CV25-167BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for CY7C1306CV25-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and timing precision.

CY7C1306CV25 belongs to the QDR SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking infrastructure and high-speed test equipment.

FAQ

What is the function of the ZQ pin on CY7C1306CV25-167BZC?

The ZQ pin calibrates output driver impedance to match the system data bus. When connected to a 100 Ω resistor to ground, it sets Q[35:0] output impedance to 20 Ω (0.2 × RQ). Tying ZQ to VDDQ enables minimum-impedance mode. It must never be left floating or tied directly to GND, as this disables impedance control and risks signal integrity failure.

Can CY7C1306CV25-167BZC operate in single-clock mode?

Yes. By tying C and C HIGH at power-on, the device enters single-clock mode where K/K clocks control both input and output registers. All timing parameters remain unchanged, and operation mimics zero-skew C/C relative to K/K. This mode is fixed at power-up and cannot be reconfigured dynamically.

How does byte write select (BWS[3:0]) work during a 36-bit write operation?

BWS[3:0] independently enables or disables four 9-bit bytes (D[8:0], D[17:9], D[26:18], D[35:27]). Each BWS bit is sampled on the corresponding K or K edge during the two-phase write cycle. Only asserted BWS lines allow their associated byte to be written; deselected bytes retain prior contents, enabling efficient read-modify-write sequences without full-word reread.

Is JTAG support on CY7C1306CV25-167BZC functional for boundary-scan testing?

Yes. The device implements IEEE 1149.1-compliant JTAG with TCK, TMS, TDI, and TDO pins. It supports mandatory instructions (SAMPLE/PRELOAD, EXTEST, BYPASS) and device-specific IDCODE register (0x04003001). Boundary-scan testing is fully operational in-system and requires no special initialization beyond standard JTAG state machine sequencing.

CY7C1306CV25-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.4V ~ 2.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1306CV25-167BZC FAQ

1.How can I place an order for CY7C1306CV25-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1306CV25-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1306CV25-167BZC reliable?

The price and inventory of CY7C1306CV25-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1306CV25-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1306CV25-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1306CV25-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1306CV25-167BZC?

CY7C1306CV25-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1306CV25-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1306CV25-167BZC?

For technical support, including CY7C1306CV25-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1306CV25-167BZC requirements.

6.How does Aetrix verify that CY7C1306CV25-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1306CV25-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1306CV25-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1306CV25-167BZC?

All CY7C1306CV25-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1306CV25-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1306CV25-167BZC part is unused and in its original packaging.

Return procedure for CY7C1306CV25-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1306CV25-167BZC Tags

  • CY7C1306CV25-167BZC
  • CY7C1306CV25-167BZC PDF
  • CY7C1306CV25-167BZC Datasheet
  • CY7C1306CV25-167BZC Specifications
  • CY7C1306CV25-167BZC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1306CV25-167BZC
  • Buy CY7C1306CV25-167BZC
  • CY7C1306CV25-167BZC Price
  • CY7C1306CV25-167BZC Distributor
  • CY7C1306CV25-167BZC Supplier
  • CY7C1306CV25-167BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER