Infineon Technologies CY7C1311CV18-250BZC

Overview

CY7C1311CV18 from Cypress Semiconductor is a 2M × 8, 18-Mbit QDR-II SRAM with separate read/write ports, 250 MHz operation (400 ps clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 600 MT/s DDR data transfer on both ports using echo clocks CQ/CQ and dual input clocks K/K, targeting high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1311CV18 datasheet, CY7C1311CV18 pinout, CY7C1311CV18 application, or CY7C1311CV18 equivalent, key selection criteria include its 165-ball FBGA package, 1.5-cycle read latency with DLL enabled, independent port selects (RPS/WPS), nibble write enables (NWS0/NWS1), and HSTL-compatible variable-drive outputs for signal integrity at 250 MHz.

Technical Context

The CY7C1311CV18 implements QDR-II architecture with fully independent synchronous read and write pipelines, each clocked by dedicated rising-edge-triggered inputs (K/K for writes, C/C for reads). Its 4-word burst transfers 32 bits per access on the 8-bit data bus, eliminating bus turnaround overhead.

Internal Delay Lock Loop (DLL) aligns echo clocks CQ/CQ to output data edges for precise capture at the controller; when disabled via DOFF, it reverts to QDR-I timing with 1-cycle latency and reduced max frequency (≤167 MHz). Address latching uses a single multiplexed A[18:0] bus sampled alternately on K and K edges.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with IDT72T3615L10PA and IS61WV102416BLL-10TLI, CY7C1311CV18 uniquely delivers 250 MHz QDR-II performance with DLL-aligned echo clocks and 165-ball FBGA density - essential for modern packet-processing and test-equipment designs requiring >4 GB/s bidirectional bandwidth.

Availability

CY7C1311CV18 is available at Aetrix Electronics and suitable for network switch buffering, high-speed ATE memory subsystems, telecom baseband processing, and FPGA co-processor caches requiring stable component supply and long-term industrial availability.

Supply support for CY7C1311CV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in infrastructure equipment - specifically engineered to replace asynchronous SRAM and reduce FPGA logic overhead in burst-oriented data paths.

FAQ

What is the minimum VDDQ voltage required for CY7C1311CV18 operation at 250 MHz?

The device requires VDDQ ≥ 1.4 V for full-spec 250 MHz operation. At 1.4 V, HSTL output drive strength and AC timing parameters meet datasheet limits; operation below 1.4 V violates guaranteed timing and may cause setup/hold violations at the controller interface.

Can CY7C1311CV18 operate without connecting the ZQ pin?

No. ZQ must be connected either to a precision resistor to ground (for impedance tuning) or directly to VDDQ (for minimum drive strength). Leaving ZQ floating or tied to VSS violates the absolute maximum ratings and risks output driver instability and signal integrity failure.

How does DLL disable (DOFF = LOW) affect read latency and maximum frequency?

With DOFF asserted, the device operates in QDR-I mode: read latency drops to 1 cycle but maximum frequency is limited to 167 MHz. All DLL-related timing parameters (e.g., CQ skew, read data hold) change - the device must be re-characterized per QDR-I specifications in that mode.

Are NWS0 and NWS1 functional in DLL-off mode?

Yes. Nibble write select functionality is independent of DLL state. NWS0 and NWS1 remain fully operational in both DLL-on and DLL-off modes, enabling partial writes to D[3:0] and D[7:4] respectively at any supported frequency up to 167 MHz in QDR-I mode.