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Infineon Technologies CY7C1311KV18-250BZC

Part No.:
CY7C1311KV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1311KV18-250BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,909

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Product details

Overview

CY7C1311KV18-250BZC from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 2M × 8 organization, 250 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply. It implements separate read/write ports, four-word burst architecture, and DDR interfaces on both ports for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1311KV18-250BZC datasheet, CY7C1311KV18-250BZC pinout, CY7C1311KV18-250BZC application, or CY7C1311KV18-250BZC equivalent, key selection factors include concurrent read/write capability, echo clock (CQ/CQ) support for timing margin, DOFF-controlled read latency (1 or 1.5 cycles), HSTL-compatible output drive, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The device uses synchronous pipelined QDR II architecture with independent read and write data paths, eliminating bus turnaround delays. Address latching occurs on alternate rising edges of K/K clocks, and data transfer occurs on every rising edge of K/K (write) and C/C (read) clocks - enabling true double-data-rate operation at 500 MT/s effective bandwidth.

It integrates an internal PLL for precise data placement, JTAG 1149.1 test access port, programmable impedance control via ZQ pin, and variable-strength HSTL output buffers. Read latency is configurable via DOFF pin: 1 cycle when LOW, 1.5 cycles when HIGH - allowing trade-offs between timing margin and pipeline depth in switch fabric or packet buffer designs.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (2M × 8 configuration)
Max Clock Frequency250 MHz - supports 500 MT/s DDR data rate on both ports
Core Supply Voltage1.8 V ±0.1 V - requires tight regulation; impacts leakage and speed stability
I/O Supply Range1.4 V to 1.8 V - enables interoperability with 1.5 V or 1.8 V logic domains
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Burst LengthFour-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory devices

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[7:0]Synchronous write data inputsLatched on rising edge of K clock; drives 8-bit parallel data into memory array during active WPS
Q[7:0]Synchronous read data outputsDriven on rising edge of C/C clocks; delivers bursted 4×8-bit words with timing aligned to echo clocks
K / KInput clocks (write/read)Rising-edge-triggered; K controls write operations, K controls read address latching - dual-clock domain enables independent port timing
C / COutput clocks (read)Generated internally; used to clock Q[7:0] outputs - minimizes skew vs. system clock for reliable capture
CQ / CQEcho clocksCopy of C/C with matched trace delay; simplifies source-synchronous data capture in FPGA/ASIC receivers
WPSWrite port selectActive-low synchronous enable; gates D[7:0] and NWS signals - essential for depth expansion and port isolation
NWS0 / NWS1Nibble write selectsActive-low controls D[3:0] and D[7:4]; enables partial writes without read-modify-write overhead
DOFFRead latency mode controlHIGH → 1.5-cycle latency (improved setup margin); LOW → 1-cycle latency (reduced pipeline stages)
ZQImpedance calibration referenceConnected to 240 Ω ±1% resistor to ground; calibrates HSTL output driver strength for signal integrity
VREFInput reference voltageSupplies mid-point reference for HSTL input receivers; must be stable at 0.75 × VDDQ

Key Features

FeatureDesign Value
Separate read/write portsEnables simultaneous access - critical for full-duplex packet buffering in telecom line cards
Four-word burst architectureReduces address bus frequency by 75%, easing routing and timing closure on dense backplanes
Echo clocks (CQ/CQ)Eliminates need for board-level delay tuning; enables >400 MHz reliable data capture with FPGA I/O
Programmable read latency (DOFF)Allows dynamic optimization: 1-cycle for latency-sensitive control plane, 1.5-cycle for jitter-tolerant data plane
JTAG 1149.1 boundary scanSupports automated test and interconnect validation in high-reliability systems without additional test fixtures

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and payload fragments in a 10G/40G Ethernet switch ASIC interface.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with zero-bus-turnaround reads/writes synchronized to line-rate clocks.

Use Value: Concurrent access eliminates arbitration stalls; echo clocks ensure deterministic 500 MT/s data capture at FPGA inputs without custom delay chains.

Use Scenario: Holding time-division multiplexed (TDM) voice frames and control signaling in a carrier-grade DSLAM or OLT line card.

IC Role / Device Role / Timing Role: Synchronous memory providing deterministic 250 MHz read/write timing for TDM frame assembly/disassembly engines.

Use Value: Configurable 1/1.5-cycle read latency allows matching to different DSP core timing budgets while maintaining full bandwidth.

Baseband Processor CacheRadar Signal Processing FIFO

Use Scenario: Serving as low-latency instruction/data cache between multi-core baseband processor and shared memory controller in 5G NR gNodeB units.

IC Role / Device Role / Timing Role: High-bandwidth SRAM interfacing directly to processor AXI4 or CHI bus via custom bridge logic.

Use Value: Four-word burst reduces external address strobe frequency, lowering EMI and simplifying PCB layer count in RF-noise-sensitive modules.

Use Scenario: Capturing real-time ADC samples from phased-array radar front-end before FFT processing in FPGA-based beamformer.

IC Role / Device Role / Timing Role: Dual-port FIFO staging raw IQ data streams with independent write (ADC clock) and read (FFT engine clock) domains.

Use Value: Independent K/K and C/C clock domains eliminate metastability risk; HSTL I/O ensures clean signal integrity at 500 MT/s over 8+ inch traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG18-Mbit QDR II+, 333 MHz max, 1.5 V core, 165-ball FBGA but different pinout and no DOFF latency controlHigher speed but lacks configurable read latency; requires tighter timing closureSelect when system demands >250 MHz bandwidth and can accommodate fixed 1-cycle latency
ISSI IS61QW25636A-250BQ18-Mbit QDR II, 250 MHz, 1.8 V core, same 165-ball FBGA footprint and DOFF pin, but no JTAG or ZQ calibrationDrop-in replacement for basic buffering; missing boundary scan and impedance tuning for high-reliability designsSelect for cost-sensitive applications where JTAG test and output drive calibration are not required

Compared with IDT72T3615L10BG and IS61QW25636A-250BQ, CY7C1311KV18-250BZC uniquely combines configurable read latency, integrated ZQ calibration, and IEEE 1149.1 JTAG - making it optimal for systems requiring field-testability, signal integrity tuning, and flexible timing adaptation across multiple clock domains.

Availability

CY7C1311KV18-250BZC is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, baseband processor caches, and radar signal processing FIFOs requiring stable component supply across extended production lifecycles.

Supply support for CY7C1311KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR II SRAM product line, designed specifically for ultra-low-latency, high-throughput buffering in packet-switched infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1311KV18-250BZC?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed. It does not impact write timing or burst behavior.

Can CY7C1311KV18-250BZC operate with only one clock signal?

No - the device requires two independent input clocks: K for write operations and address latching, and K for read address latching. Using a single clock violates timing specifications and prevents correct separation of read/write domains. The C/C output clocks are derived internally and cannot replace K/K for control functions.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to a 240 Ω ±1% external resistor to ground and calibrates the output driver impedance of all HSTL-compatible pins (D[7:0], Q[7:0], etc.). This calibration ensures consistent 25 Ω or 50 Ω output impedance across voltage/temperature, reducing reflections and improving eye diagram quality at 500 MT/s data rates.

Is the 165-ball FBGA package of CY7C1311KV18-250BZC compatible with CY7C1311KV18-333BZC?

Yes - both share identical 165-ball FBGA mechanical dimensions (13 × 15 × 1.4 mm), ball pitch (0.8 mm), and pinout. The suffix "-250BZC" vs "-333BZC" denotes speed grade only; electrical characteristics (VDD, VDDQ, timing parameters) differ, but PCB layout and solder mask are fully interchangeable.

CY7C1311KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1311KV18-250BZC FAQ

1.How can I place an order for CY7C1311KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1311KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1311KV18-250BZC reliable?

The price and inventory of CY7C1311KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1311KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1311KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1311KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1311KV18-250BZC?

CY7C1311KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1311KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1311KV18-250BZC?

For technical support, including CY7C1311KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1311KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1311KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1311KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1311KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1311KV18-250BZC?

All CY7C1311KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1311KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1311KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1311KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1311KV18-250BZC Tags

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