Infineon Technologies CY7C1312BV18-167BZCT
- Part No.:
- CY7C1312BV18-167BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312BV18-167BZCT.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1312BV18 from Cypress Semiconductor is a 1M × 18-bit, 18-Mbit QDR-II SRAM with separate read/write ports, 250 MHz clock support (167 MHz speed grade), DDR interfaces on both ports, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers 500 MT/s effective data rate per port and operates at core VDD = 1.8 V ±0.1 V with IO VDDQ = 1.4–1.8 V. Used in high-speed packet buffering for network switches and routers.
For engineers reviewing the CY7C1312BV18 datasheet, CY7C1312BV18 pinout, CY7C1312BV18 application, or CY7C1312BV18 equivalent, key selection criteria include burst depth (2-word), synchronous self-timed writes, echo clocks (CQ/CQ) for timing margin recovery, HSTL-18 I/O compatibility, and JTAG 1149.1 test access support.
Technical Context
The CY7C1312BV18 implements QDR-II architecture with fully independent read and write pipelines-each latching address on rising edges of dedicated K (write) and K (read) clocks. All synchronous inputs are registered to K/K, while output data Q[17:0] is edge-aligned to C/C clocks, enabling precise DDR capture without bus turnaround.
It integrates a Delay Lock Loop (DLL) for accurate internal data placement and supports echo clocks CQ/CQ referenced to C/C for deskewing across PCB traces. Write operations use on-chip self-timed control with BWS[1:0] byte-select capability, ensuring coherency and eliminating read-modify-write overhead in burst-access systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1M × 18-bit (18-Mbit total); enables 36-bit parallel data transfer per burst cycle |
| Max Clock Frequency | 167 MHz (K/K, C/C); defines maximum sustained 334 MT/s burst throughput per port |
| Data Rate | 334 MT/s per port (DDR); achieves 6 Gbps aggregate bandwidth with dual-port concurrency |
| Voltage Supply | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; supports HSTL-18 signaling with ZQ impedance calibration |
| Burst Length | Fixed 2-word burst; delivers two sequential 18-bit words per access-no latency penalty for burst initiation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, thermal performance optimized for high-density routing |
| JTAG Support | IEEE 1149.1 compliant TAP controller; enables boundary-scan testing and in-system debug of memory interconnects |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free and non-Pb-free options available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edge of K clock; supports full 18-bit parallel writes per cycle |
| Q[17:0] | Synchronous read data output | Driven on rising edges of both C and C clocks; provides DDR-aligned 18-bit burst output |
| K / K | Write/read address & control clock inputs | Separate positive/negative clocks for independent port timing; eliminates skew between read/write paths |
| C / C | Read data output clock pair | Deskew-capable differential clock outputs; used with CQ/CQ to compensate for flight-time mismatch |
| CQ / CQ | Read data echo clocks | Free-running copies of C/C synchronized to output data; simplify high-speed capture at controller side |
| BWS[1:0] | Byte write select (active low) | Selects which 9-bit byte (D[8:0] or D[17:9]) is written; preserves unselected bytes during partial writes |
| RPS / WPS | Read/write port select (active low) | Enables/disables respective port independently; tri-states Q[17:0] or ignores D[17:0] when deasserted |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω system trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround delay and contention-enables true concurrent access without arbitration logic |
| 2-word burst with DDR I/O | Delivers 36 bits per clock cycle per port at 167 MHz, achieving 6 Gbps aggregate bandwidth without added controller complexity |
| Delay Lock Loop (DLL) | Aligns internal data launch to output clock edges within ±50 ps jitter, enabling reliable 334 MT/s operation |
| HSTL-18 compatible I/O | Supports 1.4–1.8 V VDDQ with ZQ-calibrated drive strength; ensures signal integrity on high-speed backplanes and switch fabrics |
| Synchronous self-timed writes | On-chip write timing control eliminates external write-enable strobes and guarantees write completion before next cycle |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency buffer between ingress parser and egress scheduler, using RPS/WPS for independent flow control. Use Value: Concurrent read/write avoids pipeline stalls; 2-word burst matches typical 32–64 byte packet header sizes, reducing access count by 50% vs single-word devices. |
Use Scenario: Capturing real-time waveform samples in automated test equipment (ATE) with >200 MS/s sampling rates. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to ADC output and FPGA processing engine via separate data paths. Use Value: CQ/CQ echo clocks enable deterministic capture at FPGA inputs; DLL alignment ensures setup/hold margins remain >120 ps at 167 MHz clock frequency. |
| Telecom Line Card Buffering | FPGA Co-Processor Cache |
|
Use Scenario: Temporary storage of ATM cells or OTN frames in optical transport network (OTN) line cards requiring sub-10 ns access latency. IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic latency for frame reassembly engines, synchronized to SONET/SDH reference clocks. Use Value: Fixed 2-word burst aligns with standard 53-byte ATM cell payload; 18-bit width supports dual-cell packing, doubling effective throughput per access. |
Use Scenario: Off-chip cache for FPGA-based AI inference accelerators performing matrix-vector operations with streaming dataflow. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory serving as scratchpad between compute units and external DDR controllers. Use Value: Independent ports allow simultaneous weight fetch (read) and activation write-back (write), eliminating memory contention bottlenecks in systolic array architectures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (1M × 36), 10 ns access, LVDS I/O, 165-ball FBGA but no DLL or echo clocks | Requires external timing compensation; suited for fixed-frequency, lower-jitter systems without dynamic deskew needs | Choose when system-level timing margin allows elimination of DLL/CQ features and higher density justifies cost premium |
| ISSI IS61WV102418BLL-167BLI | 18-Mbit (512K × 36), 167 MHz, LVTTL I/O, no burst mode-single-word random access only | Lacks QDR-II burst and DDR interface; requires 2× more cycles for same data volume, increasing controller overhead | Choose only if legacy LVTTL interface compatibility is mandatory and bandwidth requirements are ≤1.5 Gbps per port |
Compared with IDT72T3615L10BG and IS61WV102418BLL-167BLI, the CY7C1312BV18 uniquely delivers burst-aligned DDR throughput with integrated DLL and echo clocks-critical for maintaining timing closure in multi-Gbps packet-processing systems where flight-time variation exceeds 100 ps.
Availability
CY7C1312BV18 is available at Aetrix Electronics and suitable for network switching, telecom line card design, high-speed test instrumentation, and FPGA-based accelerator development requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1312BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.
This device belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the function of the ZQ pin on CY7C1312BV18?
The ZQ pin connects to an external resistor to ground to calibrate the output driver impedance of Q[17:0], CQ, and CQ pins to match the system's 50 Ω data bus. When tied to VDDQ, it enables minimum-impedance mode. It must never be left floating or connected to VSS, as this disables impedance tuning and risks signal integrity failure.
Can CY7C1312BV18 operate with only one clock (K) instead of K/K and C/C pairs?
Yes-the device supports single-clock mode where K serves as both read and write address clock, and K drives output data. In this configuration, C and C are unused, and CQ/CQ derive from K. However, deskew capability and timing margin are reduced compared to dual-clock operation, limiting reliable operation above 133 MHz.
How does the BWS[1:0] signal affect write operations in CY7C1312BV18?
BWS[1:0] controls 9-bit byte granularity: BWS0 enables writing to D[8:0], BWS1 to D[17:9]. Both must be asserted for full 18-bit writes. When one is deasserted, the corresponding byte remains unchanged-preserving prior data without requiring read-modify-write sequences, essential for atomic updates in packet header fields.
Is the DOFF pin required to be connected for normal operation?
No-DOFF is optional. When left unconnected or pulled HIGH, the internal DLL remains active, ensuring optimal data-to-clock alignment. Only connect DOFF to GND if DLL-induced jitter or power consumption must be traded for simplified timing analysis in ultra-low-jitter systems where external clock alignment is handled elsewhere.
CY7C1312BV18-167BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312BV18-167BZCT FAQ
1.How can I place an order for CY7C1312BV18-167BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312BV18-167BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312BV18-167BZCT reliable?
The price and inventory of CY7C1312BV18-167BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312BV18-167BZCT is usually 5 days.
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Once your CY7C1312BV18-167BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1312BV18-167BZCT?
For technical support, including CY7C1312BV18-167BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312BV18-167BZCT requirements.
6.How does Aetrix verify that CY7C1312BV18-167BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1312BV18-167BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312BV18-167BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1312BV18-167BZCT?
All CY7C1312BV18-167BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312BV18-167BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312BV18-167BZCT part is unused and in its original packaging.
Return procedure for CY7C1312BV18-167BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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