Infineon Technologies CY7C1312CV18-167BZI
- Part No.:
- CY7C1312CV18-167BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312CV18-167BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,756
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1312CV18-167BZI from Cypress Semiconductor is a 1.8V QDR® II SRAM with 1M × 18 organization (18-Mbit), 167 MHz maximum operating frequency, 1.5-cycle read latency with DLL enabled, and dual DDR interfaces supporting 500 MT/s effective data rate on both read and write ports. It delivers concurrent read/write transactions via separate address/data paths and is used in high-bandwidth networking buffers, packet classification engines, and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C1312CV18-167BZI datasheet, CY7C1312CV18-167BZI pinout, CY7C1312CV18-167BZI application, or CY7C1312CV18-167BZI equivalent, key selection criteria include its 165-ball FBGA package, HSTL I/O compatibility, echo clock (CQ/CQ) support for timing deskew, and DLL-enabled low-latency operation at 167 MHz.
Technical Context
The CY7C1312CV18-167BZI implements a true dual-port synchronous architecture with independent K/K clocks for write address/data capture and C/C clocks for read data output - all edges are rising-edge-triggered. Its internal delay lock loop (DLL) aligns echo clocks (CQ/CQ) to output clocks with sub-cycle precision, enabling reliable data capture at 500 MT/s without external phase alignment.
It supports 2-word burst transfers on every access, full data coherency between ports, and byte-selectable writes via BWS0/BWS1. The device operates in single-clock mode (K-only) or dual-clock mode (K/K + C/C), with DOFF pin disabling the DLL to fall back to QDR-I timing at ≤167 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 configuration) |
| Max Clock Frequency | 167 MHz - defines maximum sustained transaction rate; enables 334 million 18-bit words/sec aggregate bandwidth |
| Read Latency | 1.5 cycles with DLL enabled - reduces pipeline stalls in real-time packet buffering applications |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - compatible with HSTL Class I/II bus standards and mixed-voltage system interfacing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - supports high-density PCB layout with controlled impedance routing for DDR signaling |
| Core Supply | VDD = 1.8 V ± 0.1 V - low-power operation suitable for thermally constrained telecom line cards |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing of memory interconnects in production and field diagnostics |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K clock; supports full 18-bit parallel writes per cycle |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C and C clocks; provides DDR-aligned burst output |
| K, K | Write/read address and input clock pair | Rising edges latch A[18:0], D[17:0], WPS, BWS0/BWS1; defines port timing domain |
| C, C | Read data output clock pair | Controls Q[17:0] timing; used with CQ/CQ to compensate for board flight time skew |
| CQ, CQ | Output echo clocks referenced to C/C | Free-running, DLL-synchronized clocks that mirror C/C phase for receiver-side capture alignment |
| WPS, RPS | Port select controls (active-low) | Enable independent read/write port activation; allow depth expansion without external logic |
| BWS0, BWS1 | Byte write selects (active-low) | Control D[8:0] and D[17:9] respectively; enable partial-word writes without read-modify-write overhead |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω data bus |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delays - enables continuous full-duplex throughput in switch fabric buffers |
| 2-word burst architecture | Guarantees two sequential 18-bit words per access - matches common packet header + payload fetch patterns |
| Echo clock (CQ/CQ) generation | Provides receiver-synchronized timing reference - removes need for complex PCB length matching in multi-device systems |
| Programmable output drive (ZQ) | Enables dynamic impedance tuning to 50 Ω - maintains signal integrity across voltage/temperature variations |
| DLL-enabled 1.5-cycle latency | Reduces memory access pipeline depth - improves determinism in real-time traffic shaping engines |
Applications
| Network Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before classification and forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between MAC and lookup engine; K/K clocks synchronize with ingress pipeline, C/C clocks align with egress scheduler. Use Value: Concurrent read/write allows simultaneous header write and flow-ID read, sustaining 334 Mwords/sec throughput at 167 MHz without arbitration stalls. |
Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection tasks from host CPU using FPGA-accelerated datapath. IC Role / Device Role / Timing Role: High-speed local memory for FPGA soft-core processor or DMA controller; CQ/CQ clocks simplify timing closure for 500 MT/s interface to FPGA I/O banks. Use Value: DLL-aligned echo clocks reduce setup/hold margin requirements by >150 ps, enabling reliable operation on 6-layer FR4 PCBs without custom trace tuning. |
| Telecom Line Card Memory | Real-Time Signal Processing Buffer |
|
Use Scenario: Holding time-division multiplexed (TDM) voice channel samples and control descriptors in carrier-grade DSLAM or OLT hardware. IC Role / Device Role / Timing Role: Synchronous pipelined memory interfaced to TDM controller ASIC; DOFF pin allows fallback to QDR-I mode during thermal throttling events. Use Value: 1.8 V core supply and 1.4 V I/O reduce power by 32% vs. 3.3 V QDR-I parts, critical for fanless 1RU chassis thermal design. |
Use Scenario: Buffering radar pulse returns or baseband IQ samples in phased-array antenna controllers requiring deterministic latency. IC Role / Device Role / Timing Role: Low-latency memory for DSP co-processor; 1.5-cycle read latency ensures predictable response within 9 ns at 167 MHz. Use Value: Full data coherency guarantees most recent write is always returned on read - essential for closed-loop feedback control loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10PFI | 36-Mbit (1M × 36), 100 MHz max, LVDS I/O, no DLL, 2.5 V core | Higher density but lower speed and incompatible voltage; requires level-shifting for 1.8 V systems | Select only if 36-bit bus width and LVDS signaling are required; not drop-in compatible |
| ISSI IS61WV102418BLL-167BLI | 18-Mbit (1M × 18), 167 MHz, 1.8 V core/I/O, no echo clocks or DLL, asynchronous reset | Lacks CQ/CQ and DLL - limits timing margin in >200 MHz designs; no built-in deskew capability | Choose for cost-sensitive, non-critical latency applications where board-level timing compensation is feasible |
Compared with IDT72T36120L10PFI and IS61WV102418BLL-167BLI, the CY7C1312CV18-167BZI uniquely combines 167 MHz DDR performance, DLL-based latency optimization, and echo clock support - making it the only option among the three capable of robust 500 MT/s operation on standard FR4 without custom PCB tuning.
Availability
CY7C1312CV18-167BZI is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom line card memory requiring stable component supply, long-lifecycle support, and guaranteed Pb-free compliance.
Supply support for CY7C1312CV18-167BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
The CY7C1312CV18 belongs to Cypress's QDR® II SRAM product line, designed specifically for deterministic, high-throughput memory subsystems in packet-switched infrastructure where concurrent read/write, low latency, and timing repeatability are mandatory.
FAQ
What is the function of the DOFF pin, and how should it be configured?
The DOFF (DLL Turn Off) pin disables the internal delay lock loop when pulled LOW. For normal operation at 167 MHz with 1.5-cycle latency, DOFF must be tied HIGH via a ≤10 kΩ pull-up resistor to VDDQ. When disabled, the device reverts to QDR-I timing with 1-cycle latency but reduced timing margin - this mode is intended only for debug or thermal derating scenarios.
Can CY7C1312CV18-167BZI operate with only one clock (K) instead of K/K and C/C pairs?
Yes - the device supports single-clock mode where K serves as both address capture and output clock. In this mode, Q[17:0] is driven on K and K edges, eliminating need for separate C/C. However, echo clocks (CQ/CQ) remain inactive, and timing margins tighten due to lack of deskew capability; use only in space-constrained or low-complexity designs where 500 MT/s reliability is not required.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor (typically 50 Ω) to ground to calibrate output driver impedance. This sets Q[17:0], CQ, and CQ drive strength to 0.2 × RQ (i.e., 10 Ω), matching standard 50 Ω transmission lines. Proper ZQ calibration reduces reflections and jitter by >25%, directly improving eye height and timing margin at 500 MT/s - skipping calibration risks bit errors above 133 MHz.
Is the 165-ball FBGA package compatible with standard reflow profiles?
Yes - the 165-ball FBGA (13 × 15 × 1.4 mm) uses SnAgCu (SAC305) solder balls and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles with peak temperature ≤260 °C and time above liquidus 60–90 seconds are fully supported; no special thermal ramp rates or underfill are required for reliability.
CY7C1312CV18-167BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312CV18-167BZI FAQ
1.How can I place an order for CY7C1312CV18-167BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312CV18-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312CV18-167BZI reliable?
The price and inventory of CY7C1312CV18-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312CV18-167BZI is usually 5 days.
3.What payment methods are accepted for CY7C1312CV18-167BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1312CV18-167BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1312CV18-167BZI?
CY7C1312CV18-167BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1312CV18-167BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1312CV18-167BZI?
For technical support, including CY7C1312CV18-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312CV18-167BZI requirements.
6.How does Aetrix verify that CY7C1312CV18-167BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1312CV18-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312CV18-167BZI meets industry standards.
7.What is the process for return or replacement of CY7C1312CV18-167BZI?
All CY7C1312CV18-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312CV18-167BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312CV18-167BZI part is unused and in its original packaging.
Return procedure for CY7C1312CV18-167BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1312CV18-167BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

