Infineon Technologies CY7C1312CV18-250BZI
- Part No.:
- CY7C1312CV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312CV18-250BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1312CV18 from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 1M × 18 organization, 250 MHz clock operation, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 MT/s effective data rate), and 1.5-cycle read latency with DLL enabled. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1312CV18 datasheet, CY7C1312CV18 pinout, CY7C1312CV18 application, or CY7C1312CV18 equivalent, key selection criteria include concurrent read/write capability, echo clock support (CQ/CQ) for timing margin recovery, HSTL-18-compatible variable-drive outputs, and FBGA-165 package compatibility with high-density routing constraints.
Technical Context
The CY7C1312CV18 implements a true dual-port synchronous architecture with independent K/K clocks for write address/data capture and C/C clocks for read data output timing. Its internal delay lock loop (DLL) aligns echo clocks (CQ/CQ) to output data edges, enabling reliable capture at 500 MT/s without external deskew circuitry.
All address and control inputs are registered on rising edges of K or K; all outputs are edge-aligned to C or C. Byte write selects (BWS0/BWS1) enable granular 9-bit writes per port, and port selects (RPS/WPS) allow depth expansion while maintaining full port independence.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1,048,576 × 18) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles with DLL enabled - reduces pipeline stalls in burst-heavy traffic |
| Core Supply Voltage | 1.8 V ± 0.1 V - matches low-voltage ASIC/FPGA I/O domains |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-18 signaling with adjustable drive strength |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for thermal dissipation and signal integrity in multi-chip modules |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial networking equipment |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edge of K clock; supports 2-word burst writes |
| Q[17:0] | Synchronous read data output | Driven on rising edges of C and C clocks; tristated when RPS is deasserted |
| K / K | Write/read address and control clock pair | Rising-edge-triggered; enables independent timing for write and read port operations |
| C / C | Read data output clock pair | Deskews flight time across memory subsystem; drives Q[17:0] and CQ/CQ |
| CQ / CQ | Output echo clocks referenced to C/C | Free-running, phase-aligned to Q[17:0] edges - simplifies FPGA/ASIC data capture logic |
| RPS / WPS | Active-low port select controls | Enables/disables read or write port independently; supports depth expansion without bus contention |
| BWS0 / BWS1 | Byte write select (9-bit granularity) | Controls D[8:0] and D[17:9]; allows partial-word updates without read-modify-write overhead |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delays - enables true concurrent access in packet forwarding pipelines |
| 2-word burst architecture | Guarantees two sequential 18-bit words per access - matches typical network header+payload fetch patterns |
| Delay Lock Loop (DLL) | Aligns CQ/CQ to Q[17:0] edges within ±50 ps - removes board-level skew compensation logic |
| HSTL-18 compatible outputs | Programmable drive strength via ZQ calibration - ensures signal integrity across 10+ inch PCB traces |
| JTAG 1149.1 boundary scan | Full IEEE-compliant test access port - enables in-system verification of high-speed memory interconnects |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and payloads in switch fabric ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access. Use Value: 500 MT/s per port sustains full-duplex line-rate traffic without backpressure; DLL-aligned CQ clocks simplify FPGA capture timing closure. |
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE). IC Role / Device Role / Timing Role: High-throughput memory buffer interfacing directly to high-speed DAC/ADC controllers. Use Value: Independent K/K and C/C clocks decouple acquisition and playback timing domains; 1.5-cycle latency minimizes jitter in deterministic test sequences. |
| Telecom Baseband Processing | Multi-Core Processor Cache Coherency |
|
Use Scenario: Shared L2/L3 cache buffer between multiple DSP cores in 5G baseband units. IC Role / Device Role / Timing Role: Synchronous pipelined memory supporting simultaneous instruction fetch and data load/store. Use Value: Full data coherency guarantees most-current values across ports; BWS0/BWS1 enable atomic byte updates without locking. |
Use Scenario: Inter-core communication buffer in heterogeneous SoCs with asymmetric CPU/GPU clusters. IC Role / Device Role / Timing Role: Low-latency shared memory node with deterministic 250 MHz access timing. Use Value: 165-ball FBGA footprint supports dense placement near processor die; VDDQ range accommodates mixed-voltage domain integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 18-Mbit QDR II+, 167 MHz max, 1.5V core, no DLL, fixed 1-cycle latency | Lower bandwidth; suited for cost-sensitive telecom line cards where 250 MHz not required | Select if system clock < 200 MHz and DLL-free timing simplification is prioritized over peak throughput |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, single-port, 166 MHz, 3.3V/2.5V/1.8V, no DDR or echo clocks | No concurrent access; requires external arbitration; lacks CQ/CQ timing aids | Choose only for legacy designs where dual-port capability is unnecessary and board layout cannot accommodate FBGA-165 |
Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1312CV18 delivers 50% higher bandwidth via 250 MHz DDR operation and eliminates system-level deskew design effort through integrated DLL and echo clocks - critical for new 10G+ infrastructure designs.
Availability
CY7C1312CV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and multi-core processor cache coherency requiring stable component supply across extended production lifecycles.
Supply support for CY7C1312CV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.
The QDR® II SRAM product line targets high-throughput, low-latency memory subsystems in networking and test equipment, where deterministic dual-port access and echo-clock–assisted timing closure are essential.
FAQ
What is the function of the DOFF pin?
The DOFF pin disables the internal delay lock loop (DLL) when pulled LOW. With DLL disabled, the device operates in QDR I mode at up to 167 MHz with 1-cycle read latency and no echo clock alignment. For normal 250 MHz operation, DOFF must be tied HIGH via ≤10 kΩ resistor to VDDQ.
Can CY7C1312CV18 operate in single-clock mode?
Yes - by connecting K to C and K to C, the device uses a single clock domain for both address capture and data output. In this mode, Q[17:0] and CQ/CQ are driven from K/K edges, eliminating need for separate C/C sources but reducing maximum frequency to 200 MHz due to timing margin constraints.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor to ground (typically 100 Ω) to calibrate output driver impedance to 20 Ω (0.2 × RQ). This matches standard HSTL-18 bus impedance, minimizing reflections and ensuring clean eye diagrams at 500 MT/s. Leaving ZQ unconnected or tied to GND causes undefined drive strength and signal degradation.
Is JTAG boundary scan supported during normal operation?
Yes - the IEEE 1149.1 TAP controller operates independently of memory functions. TDI, TDO, TCK, and TMS pins remain fully functional during active read/write cycles, enabling in-system testing and debug without halting data flow. No special initialization or mode entry is required beyond standard JTAG state machine sequencing.
CY7C1312CV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312CV18-250BZI FAQ
1.How can I place an order for CY7C1312CV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312CV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312CV18-250BZI reliable?
The price and inventory of CY7C1312CV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312CV18-250BZI is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1312CV18-250BZI?
For technical support, including CY7C1312CV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312CV18-250BZI requirements.
6.How does Aetrix verify that CY7C1312CV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1312CV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312CV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1312CV18-250BZI?
All CY7C1312CV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312CV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312CV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1312CV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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