Infineon Technologies CY7C1312KV18-250BZC

Overview

CY7C1312KV18 from Cypress Semiconductor is a 1.8 V, 18-Mbit QDR® II SRAM with 1M × 18 organization, two-word burst architecture, 333 MHz clock support (666 MHz DDR data rate), and separate read/write ports enabling concurrent transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1312KV18 datasheet, CY7C1312KV18 pinout, CY7C1312KV18 application, or CY7C1312KV18 equivalent, key selection considerations include its 1.5-cycle read latency (DOFF = HIGH), HSTL-compatible 1.4–1.8 V I/O supply, echo clocks (CQ/CQ) for timing margin recovery, and 165-ball FBGA package with verified pin mapping for depth expansion via RPS/WPS and BWS[1:0].

Technical Context

The CY7C1312KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are initiated on rising edges of complementary K/K clocks, while output data is synchronized to C/C clocks - enabling precise DDR timing control without bus turnaround.

It supports single-clock mode (K/K only) and dual-clock mode (K/K for inputs, C/C for outputs), includes a PLL for accurate data placement, JTAG 1149.1 test access, programmable output impedance via ZQ, and DOFF-configurable read latency (1 cycle in QDR I mode, 1.5 cycles in QDR II mode).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, the CY7C1312KV18 uniquely delivers 500 MT/s DDR throughput with echo-clock–assisted timing closure and configurable latency - making it optimal for 10+ Gbps packet memory where deterministic timing and concurrency are mandatory.

Availability

CY7C1312KV18 is available at Aetrix Electronics and suitable for telecom line card buffering, network packet switching, and baseband processing requiring stable component supply, long-lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1312KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with over 30 years of SRAM innovation.

The QDR® II SRAM product line targets high-speed infrastructure applications demanding deterministic latency, concurrent access, and DDR bandwidth - specifically engineered for packet buffering, switching fabrics, and real-time signal processing.

FAQ

What is the function of the DOFF pin on CY7C1312KV18?

The DOFF (Data Output OFF) pin selects the read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin directly controls internal pipeline staging and must be held static during operation - it is not sampled dynamically per access.

Can CY7C1312KV18 operate with only the K clock (single-clock mode)?

Yes - in single-clock mode, K and K serve as the sole timing reference for both input latching and output driving; C and C are unused, and Q[17:0] outputs are synchronized to K/K edges. All timing parameters shift accordingly, and echo clocks CQ/CQ derive from K/K instead of C/C. The device remains fully functional but loses dual-clock deskew benefits.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and configures its output drivers (Q[17:0], CQ, CQ) to 20% of that resistance value. For example, a 50 Ω RQ yields ~10 Ω driver impedance. Direct connection to VDDQ enables minimum impedance mode (~7 Ω), while floating or grounding ZQ is prohibited and may cause undefined behavior.

What is the role of BWS0 and BWS1 in write operations?

BWS0 and BWS1 are active-low byte write select signals controlling independent 9-bit segments of the 18-bit data bus: BWS0 enables writes to D[8:0], BWS1 enables writes to D[17:9]. When either is deasserted, the corresponding byte group retains its prior value - enabling partial-word updates without read-modify-write cycles, essential for protocol header manipulation in packet processing.