Infineon Technologies CY7C1312KV18-250BZCT

Overview

CY7C1312KV18-250BZCT from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz maximum clock frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with two-word DDR transfers per cycle and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1312KV18-250BZCT datasheet, CY7C1312KV18-250BZCT pinout, CY7C1312KV18-250BZCT application, or CY7C1312KV18-250BZCT equivalent, key selection criteria include read latency (1.5 cycles with DOFF HIGH), echo clock timing (CQ/CQ), byte write select granularity (BWS0/BWS1), and FBGA-165 package compatibility for multi-chip memory subsystems.

Technical Context

The device implements true dual-port synchronous pipelined architecture: independent K/K clocks latch addresses and data on rising edges, while C/C clocks drive output registers for precise DDR read timing. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, enabling source-synchronous capture at the controller.

All inputs are registered on K/K; all outputs are registered on C/C (or K/K in single-clock mode). Writes use on-chip self-timed circuitry, eliminating external write-strobe timing constraints. The DOFF pin selects between QDR II mode (1.5-cycle read latency) and QDR I mode (1-cycle latency), preserving backward compatibility.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1312KV18-250BZCT uniquely delivers 250 MHz DDR burst performance with echo clocks and programmable impedance-critical for high-speed packet processing where timing closure and signal integrity dominate.

Availability

CY7C1312KV18-250BZCT is available at Aetrix Electronics and suitable for packet buffering in Ethernet switches, line card memory in telecom routers, and depth-expanded memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1312KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

This device belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-switched infrastructure where concurrent read/write and sub-6 ns latency are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-250BZCT?

The DOFF (Double-Data-Rate Off) pin configures read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This allows runtime compatibility with legacy controllers without hardware redesign.

How does the ZQ pin affect signal integrity?

ZQ connects to an external 240 Ω resistor to ground, calibrating internal output drivers to deliver 48 Ω impedance on Q[17:0] and CQ/CQ pins. This matches standard PCB trace impedance, minimizing reflections and ensuring clean DDR waveform edges at 250 MHz operation.

Can CY7C1312KV18-250BZCT operate with only one clock (K) instead of K/K?

Yes - in single-clock mode, K serves as both positive and negative clock reference: K is used for input capture and K is unused (tied or left floating per datasheet guidance). Output timing then references K/K, and CQ/CQ derive from K. All functionality remains intact, though differential clocking benefits are forfeited.

What is the purpose of BWS0 and BWS1 in write operations?

BWS0 and BWS1 are active-low byte write select signals that independently enable writing to D[8:0] and D[17:9]. When deasserted, corresponding 9-bit segments retain prior data - enabling partial-word updates without read-modify-write cycles, critical for efficient header manipulation in packet processing.