Infineon Technologies CY7C1312KV18-250BZI
- Part No.:
- CY7C1312KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312KV18-250BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1312KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock support (666 MHz DDR data rate), 1.5-cycle read latency (DOFF = HIGH), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent burst transfers in networking packet buffers and high-speed switch fabric control memory.
For engineers reviewing the CY7C1312KV18 datasheet, CY7C1312KV18 pinout, CY7C1312KV18 application, or CY7C1312KV18 equivalent, key selection criteria include dual-clock DDR timing, echo clock (CQ/CQ) support for source-synchronous capture, HSTL-compatible output drive, JTAG 1149.1 test access, and FBGA-165 package compatibility with depth expansion via RPS/WPS.
Technical Context
The CY7C1312KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are initiated on rising edges of K/K clocks, while output data is clocked by C/C with associated echo clocks CQ/CQ for flight-time deskew.
It supports two-word burst transfers per access, full data coherency, on-chip self-timed writes, and programmable output impedance via ZQ pin. DOFF pin selects between 1.5-cycle (QDR II mode) and 1-cycle (QDR I mode) read latency - a hardware-configurable timing behavior critical for system-level synchronization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput on both ports |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable real-time timing mode |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports mixed-voltage system integration |
| Data Interface | Double-data-rate (DDR) on both read and write ports - eliminates bus turnaround overhead |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count memory |
| Standards Compliance | JTAG IEEE 1149.1 - enables boundary-scan test and debug in production and field systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | 18-bit parallel data sampled on rising edge of K/K; latched for two-word burst write |
| Q[17:0] | Synchronous read data outputs | 18-bit parallel data driven on rising edges of C/C; tristated when RPS inactive |
| RPS, WPS | Port select controls | Active-low signals enabling independent read/write port activation - essential for depth expansion |
| BWS[1:0] | Byte write select | Two active-low signals controlling D[8:0] and D[17:9]; enables partial-word writes without read-modify-write |
| K, K | Input clocks (positive/negative) | Rising edges latch all synchronous inputs (address, data, control); define write initiation timing |
| C, C | Output clocks (positive/negative) | Rising edges clock Q[17:0] output; used with CQ/CQ to deskew data capture at controller |
| CQ, CQ | Echo clocks | Free-running copies of C/C synchronized to output clock domain - simplify source-synchronous timing closure |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune Q[17:0]/CQ/CQ output impedance to 0.2×RQ |
| DOFF | Read latency mode select | High = 1.5-cycle QDR II latency; Low = 1-cycle QDR I latency - hardware-selectable timing behavior |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay and data contention - enables true concurrent read/write at full bandwidth |
| Two-word burst architecture | Delivers 36 bits per clock cycle (18-bit × 2) - doubles effective throughput vs. single-word devices |
| Echo clock support (CQ/CQ) | Enables precise source-synchronous data capture at controller - reduces timing margin requirements in >300 MHz systems |
| Programmable output impedance (ZQ) | Allows dynamic matching to PCB trace impedance - improves signal integrity without external termination resistors |
| JTAG 1149.1 test access port | Supports boundary-scan testing and in-system debugging - reduces test development time and increases manufacturing yield |
Applications
| Packet Buffer Memory | Switch Fabric Control Store |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as dual-port buffer between ingress parser and egress scheduler logic. Use Value: Concurrent read/write allows simultaneous header lookup (read) and new packet enqueue (write) at line rate without arbitration stalls. |
Use Scenario: Holding forwarding tables and queue management state in multi-gigabit network switches. IC Role / Device Role / Timing Role: Synchronous control store providing deterministic access to routing decision parameters under strict timing budgets. Use Value: 1.5-cycle latency mode (DOFF = HIGH) aligns with pipeline stages in ASIC-based switch fabrics requiring precise clock-phase alignment. |
| Baseband Processor Cache | Test Equipment Pattern Memory |
|
Use Scenario: Serving as L1 instruction/data cache for FPGA-accelerated wireless baseband processing units. IC Role / Device Role / Timing Role: Burst-access SRAM interfacing directly to FPGA fabric with minimal glue logic. Use Value: HSTL-compatible 1.4–1.8 V I/O supports direct connection to Xilinx UltraScale+ or Intel Stratix 10 I/O banks without level shifters. |
Use Scenario: Storing high-speed digital test vectors in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic, jitter-immune memory delivering repeatable timing for sub-nanosecond edge placement. Use Value: Echo clocks (CQ/CQ) referenced to C/C enable controller to lock phase with output data - critical for <100 ps timing accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 1M × 18, 250 MHz max, 1.8 V core, but uses SSTL-18 I/O (not HSTL); no ZQ calibration | Limited to lower-frequency systems where echo clock deskew is not required | Prefer when existing board uses SSTL-18 infrastructure and timing margins exceed 2 ns |
| ISSI IS61WV102418B | 1M × 18, 165 MHz max, asynchronous interface, no DDR or echo clocks, 3.3 V only | Suitable only for legacy control-plane memory where bandwidth < 330 MB/s suffices | Select only for cost-sensitive, non-real-time applications with relaxed timing and voltage constraints |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1312KV18 uniquely supports 333 MHz DDR operation with echo clocks and programmable impedance - making it the only option for new designs targeting >500 MB/s sustained throughput with sub-200 ps timing closure.
Availability
CY7C1312KV18 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure, and test instrumentation requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.
Supply support for CY7C1312KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, telecom, and test equipment - emphasizing concurrent access, precise timing control, and signal integrity at multi-hundred-MHz speeds.
FAQ
What is the function of the DOFF pin on CY7C1312KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for optimized timing in high-speed pipelines; when LOW, it reverts to 1-cycle QDR I latency for backward compatibility. This is a static hardware configuration - no register write required.
Can CY7C1312KV18 operate with only one clock signal (K only)?
Yes - it supports single-clock mode where K serves as both input and output clock. In this mode, C/C are unused, CQ/CQ derive from K/K, and Q[17:0] are clocked by K/K. However, echo clock deskew and maximum 333 MHz performance require dual-clock (K/K + C/C) operation.
How does the ZQ pin affect signal integrity?
ZQ connects to an external resistor to ground (typically 240 Ω) to calibrate output driver impedance for Q[17:0], CQ, and CQ pins. This achieves ~48 Ω output impedance (0.2 × RQ), matching standard 50 Ω PCB traces and reducing reflections - eliminating need for discrete series terminators.
Is JTAG boundary scan supported during normal operation?
Yes - the IEEE 1149.1 TAP remains fully functional while the SRAM operates. Test instructions (SAMPLE/PRELOAD, EXTEST, INTEST) can be executed without halting memory access, enabling in-system verification and fault diagnosis without interrupting real-time traffic flow.
CY7C1312KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312KV18-250BZI FAQ
1.How can I place an order for CY7C1312KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312KV18-250BZI reliable?
The price and inventory of CY7C1312KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312KV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1312KV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1312KV18-250BZI transactions.
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Once your CY7C1312KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1312KV18-250BZI?
For technical support, including CY7C1312KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1312KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1312KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1312KV18-250BZI?
All CY7C1312KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1312KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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