Infineon Technologies CY7C1312KV18-250BZXC

Overview

CY7C1312KV18-250BZXC from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz maximum clock frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with two-word DDR transfers per cycle and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1312KV18-250BZXC datasheet, CY7C1312KV18-250BZXC pinout, CY7C1312KV18-250BZXC application, or CY7C1312KV18-250BZXC equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock timing (CQ/CQ) for source-synchronous capture, HSTL-18-compatible output drive, JTAG 1149.1 test access, and FBGA-165 package thermal/mechanical constraints.

Technical Context

The device implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are initiated on rising edges of K/K clocks, while output data is clocked by C/C with echo clocks CQ/CQ aligned to C/C for board-level deskew.

It features on-chip self-timed writes, programmable output impedance via ZQ pin (0.2×R_Q), variable-drive HSTL outputs, and IEEE 1149.1 boundary scan. DOFF pin selects between 1.5-cycle (QDR II) and 1-cycle (QDR I) read latency modes, enabling interoperability with legacy systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1312KV18-250BZXC provides 4.5× higher effective bandwidth via DDR+burst, eliminates bus turnaround delays, and enables source-synchronous timing closure - critical for >1 Gbps memory subsystems in networking and test gear.

Availability

CY7C1312KV18-250BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, and multi-core processor cache coherency directories requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1312KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure and high-speed test systems.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-250BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II operation with 1.5-cycle read latency; when LOW, it forces QDR I compatibility with 1-cycle latency. This pin directly controls internal pipeline staging and must be held static during operation - it is not sampled dynamically per access.

Can CY7C1312KV18-250BZXC operate with only one clock signal (K only)?

Yes - in single-clock mode, K serves as both input and output clock reference; C/C and CQ/CQ are unused. All data transfers synchronize to K's rising edge, reducing clock routing complexity but limiting maximum frequency to 200 MHz due to setup/hold constraints. The device retains full functionality except echo clock support and optimal deskew capability.

How does the ZQ pin affect signal integrity in high-speed designs?

ZQ connects to an external resistor to ground (typically 120 Ω) to calibrate internal output driver impedance to 0.2×R_Q (e.g., 24 Ω). This matches standard 50 Ω transmission lines when used with series termination, minimizing reflections and improving eye diagram margin at 500 Mbps per pin - critical for reliable operation above 200 MHz.

Is JTAG boundary scan supported on CY7C1312KV18-250BZXC, and what pins are required?

Yes - the device implements IEEE 1149.1 JTAG with TDI, TDO, TCK, and TMS pins routed to balls R12, R11, R10, and R9 respectively. No external pull-ups are required; the TAP controller operates at VDDQ voltage and supports instruction register scan, bypass, and sample/preload operations for production test and debug.