Infineon Technologies CY7C1312KV18-250BZXCT

Overview

CY7C1312KV18-250BZXCT from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers two-word burst transfers per access at 500 MT/s effective data rate using DDR interfaces on both ports, and supports concurrent read/write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1312KV18-250BZXCT datasheet, CY7C1312KV18-250BZXCT pinout, CY7C1312KV18-250BZXCT application, or CY7C1312KV18-250BZXCT equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clocks CQ/CQ for timing margin recovery, HSTL-compatible variable-drive outputs, JTAG 1149.1 test support, and FBGA-165 package compatibility with depth expansion via RPS/WPS.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are initiated on rising edges of complementary K/K clocks, while output data is synchronized to C/C clocks - enabling precise DDR timing control and eliminating bus turnaround overhead.

It features an on-chip PLL for accurate data placement, programmable output impedance tuning via ZQ pin (0.2×RQ matching), and configurable read latency: 1.5 cycles when DOFF = HIGH (QDR II mode) or 1 cycle when DOFF = LOW (QDR I compatibility mode). All inputs are registered, and outputs pass through edge-aligned registers controlled by C/C.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port burst SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102418BLL-10BLI, CY7C1312KV18-250BZXCT uniquely delivers concurrent DDR burst transfers, echo-clock–assisted timing closure, and programmable impedance - making it irreplaceable in modern high-speed packet processing and test instrumentation.

Availability

CY7C1312KV18-250BZXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1312KV18-250BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR® II SRAM product line, engineered specifically for deterministic, high-throughput memory subsystems in networking infrastructure and test equipment where bus turnaround latency must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-250BZXCT?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II operation with 1.5-cycle latency; when LOW, it reverts to QDR I compatibility mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and affects all subsequent read accesses until changed.

Can CY7C1312KV18-250BZXCT operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying board layout. In this mode, data is clocked in/out using K/K only, and CQ/CQ are generated relative to K/K. However, dual-clock mode with separate K/K and C/C provides superior skew control for high-speed systems.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of Q[17:0] and CQ/CQ pins to 0.2×RQ (e.g., ~48 Ω). This matching minimizes signal reflections on high-speed traces, improves eye diagram margins, and reduces EMI - critical for reliable 500 MT/s operation.

Is CY7C1312KV18-250BZXCT pin-compatible with other QDR II devices in the same family?

Yes - CY7C1312KV18-250BZXCT shares identical 165-ball FBGA pinout and signal mapping with CY7C1312KV18-300BZXCT and CY7C1312KV18-333BZXCT. Only timing specifications differ; no PCB redesign is needed when upgrading speed grades within the same density and configuration.