Infineon Technologies CY7C1312KV18-300BZXC

Overview

CY7C1312KV18-300BZXC from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with 1.5-cycle read latency (DOFF = HIGH) and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1312KV18-300BZXC datasheet, CY7C1312KV18-300BZXC pinout, CY7C1312KV18-300BZXC application, or CY7C1312KV18-300BZXC equivalent, key selection criteria include dual-clock DDR timing (K/K, C/C), echo clocks (CQ/CQ) for source-synchronous capture, HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements true dual-port architecture with physically independent read and write data paths-no bus turnaround required. It uses two rising-edge-triggered input clocks (K and K) for address/data latching and two dedicated output clocks (C and C) with associated echo clocks (CQ and CQ) to deskew read data flight times across multi-device memory subsystems.

Internally pipelined with synchronous self-timed writes and multiplexed 19-bit address bus, it delivers two sequential 18-bit words per access. The DOFF pin selects between 1.5-cycle (QDR II mode) and 1-cycle (QDR I mode) read latency, while ZQ enables on-die impedance tuning to match system trace impedance via external resistor.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36120L5PF and IS61WV102418BLL-250BLI, CY7C1312KV18-300BZXC provides higher bandwidth (1.08 GB/s vs. ≤0.9 GB/s), native 1.8 V operation, and integrated timing aids (echo clocks, ZQ) essential for robust >300 MHz system integration.

Availability

CY7C1312KV18-300BZXC is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom infrastructure, and backplane interface buffers requiring stable component supply across extended production lifecycles.

Supply support for CY7C1312KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1312KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, full-duplex memory subsystems in high-speed networking and test equipment where deterministic timing and burst bandwidth are critical.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-300BZXC?

The DOFF (Double-Off) pin selects read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW, it reverts to QDR I mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and determines internal pipeline staging - no external delay elements or configuration registers are involved.

Can CY7C1312KV18-300BZXC operate with only one clock (K) instead of dual K/K?

Yes - the device supports single-clock mode where K is used for both input latching and output driving (replacing C/C). In this mode, CQ/CQ are generated relative to K, and Q[17:0] are driven on K's rising edge. However, dual-clock mode is required to achieve full 300 MHz performance with optimal skew control via echo clocks.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (typically 240 Ω) to ground, enabling on-die calibration of Q[17:0] and CQ/CQ output driver impedance to 48 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances, reducing reflections and improving eye diagram margins - especially critical for 600 Mbps DDR signals over >3-inch traces.

Is CY7C1312KV18-300BZXC pin-compatible with other QDR II SRAMs in the same package?

No - while the 165-ball FBGA footprint is standardized, pin assignments (e.g., BWS mapping, echo clock polarity, VREF location) differ across vendors and generations. For example, IDT and Micron QDR II parts use distinct BWS[3:0] groupings and lack DOFF functionality. Direct replacement requires full schematic and layout review.