Infineon Technologies CY7C1312KV18-300BZXCT

Overview

CY7C1312KV18-300BZXCT from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 Mbps DDR per port), 1.5-cycle read latency (DOFF = HIGH), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent burst transfers of two 18-bit words per access for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1312KV18-300BZXCT datasheet, CY7C1312KV18-300BZXCT pinout, CY7C1312KV18-300BZXCT application, or CY7C1312KV18-300BZXCT equivalent, key selection criteria include dual-clock DDR timing, echo clock (CQ/CQ) support for source-synchronous capture, HSTL-compatible variable-drive outputs, JTAG 1149.1 testability, and FBGA-165 package compatibility with high-density routing.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write data paths, eliminating bus turnaround overhead. It uses rising edges of K/K clocks for address/data latching and C/C clocks for output timing, enabling true concurrent read-write operations at 300 MHz.

Internal self-timed writes and programmable DOFF pin select between 1.5-cycle (QDR II mode) or 1-cycle (QDR I mode) read latency. Echo clocks CQ/CQ are phase-aligned to C/C and provide deterministic timing references for high-speed data capture in multi-device systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102418B, CY7C1312KV18-300BZXCT uniquely delivers 300 MHz DDR concurrency, echo-clock–assisted timing closure, and on-die impedance matching-critical for next-generation packet-processing systems requiring deterministic sub-nanosecond timing margins.

Availability

CY7C1312KV18-300BZXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment data capture requiring stable component supply and long-term industrial availability.

Supply support for CY7C1312KV18-300BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR® II SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking and telecom infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-300BZXCT?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle read latency; when LOW, it reverts to QDR I mode with 1-cycle latency. This pin directly configures internal pipeline staging and must be set before initialization and held static during operation.

Can CY7C1312KV18-300BZXCT operate with only one clock (K) instead of differential K/K?

Yes - the device supports single-clock mode where K serves as both positive and negative clock input. In this mode, C and C must also be tied together, and CQ/CQ derive from K. However, performance is limited to ≤250 MHz due to reduced timing margin, and echo-clock deskew benefits are lost.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (typically 240 Ω) to ground; the device measures this resistance and adjusts driver strength so that Q[17:0] and CQ/CQ output impedances equal 0.2 × RQ (e.g., 48 Ω). Direct connection to VDDQ enables minimum impedance mode (~25 Ω), but grounding or leaving ZQ floating is prohibited.

Is JTAG boundary scan supported on CY7C1312KV18-300BZXCT, and what pins are required?

Yes - IEEE 1149.1 JTAG is fully implemented. Required pins are TDI, TDO, TCK, TMS, and TRST (optional). These are dedicated balls in the FBGA-165 package (pins R12, R11, R10, R9, and P10 respectively) and require no additional configuration beyond standard JTAG voltage levels (VDDQ).