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Infineon Technologies CY7C1312KV18-300BZXI

Part No.:
CY7C1312KV18-300BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1312KV18-300BZXI.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,228

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Product details

Overview

CY7C1312KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock operation (666 MHz DDR data rate), 1.5-cycle read latency (DOFF = HIGH), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent burst transfers of two 18-bit words per access for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1312KV18 datasheet, CY7C1312KV18 pinout, CY7C1312KV18 application, or CY7C1312KV18 equivalent, key selection criteria include dual-clock DDR timing support, echo clock (CQ/CQ) synchronization for high-speed capture, JTAG 1149.1 testability, and FBGA-165 package compatibility with depth expansion via RPS/WPS.

Technical Context

The CY7C1312KV18 implements a synchronous pipelined QDR II architecture with physically independent read and write data paths-eliminating bus turnaround overhead. It uses K/K clocks for address/data input latching and C/C clocks for output timing, with echo clocks CQ/CQ aligned to C/C for skew-compensated data capture.

It supports two-word burst transfers on every access, with configurable read latency (1 cycle in QDR I mode when DOFF = LOW; 1.5 cycles in native QDR II mode when DOFF = HIGH). Internal self-timed writes and programmable output impedance (via ZQ pin) enable robust signal integrity at 333 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (1M × 18 organization)
Max Clock Frequency333 MHz - enables 666 MT/s effective data rate on both read/write DDR ports
Read Latency1.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned controller design
Core Supply1.8 V ±0.1 V - low-power, noise-sensitive core rail requiring tight regulation
I/O Supply Range1.4 V to 1.8 V - supports HSTL-compatible signaling across multiple logic families
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in space-constrained routers/switches
Standby CurrentTypical 50 mA at 333 MHz - power-efficient for burst-oriented traffic buffering

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch and bottom-side thermal pad.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edge of K/K; 18-bit parallel path for burst write transfers
Q[17:0]Synchronous read data outputsDriven on rising edge of C/C; tristated when RPS is deasserted
K, KPositive/negative input clocksControl all synchronous inputs; rising edges initiate read/write accesses
C, CPositive/negative output clocksDrive Q[17:0] and CQ/CQ; used with echo clocks for flight-time deskewing
CQ, CQOutput echo clocksFree-running, phase-aligned copies of C/C - simplify source-synchronous capture at controller
RPS, WPSRead/Write Port SelectActive-low enables; allow independent port activation for depth expansion or interleaved access
BWS[1:0]Byte Write SelectsIndependent 9-bit byte enables (BWS0 → D[8:0], BWS1 → D[17:9]) for partial-word writes
ZQImpedance calibration inputConnects to external resistor to ground to tune Q/CQ output driver impedance to 0.2×RQ
DOFFRead latency mode controlHIGH → 1.5-cycle QDR II latency; LOW → 1-cycle QDR I backward compatibility

Key Features

FeatureDesign Value
Separate read/write data portsEnables true concurrent read+write without bus turnaround, increasing effective bandwidth by up to 2× vs. common-I/O SRAMs
Two-word burst architectureDelivers 36 bits per access cycle (2 × 18-bit words), reducing address strobe overhead and simplifying controller FIFO management
Echo clock support (CQ/CQ)Provides source-synchronous timing references aligned to Q[17:0], eliminating board-level skew compensation circuitry
JTAG 1149.1 boundary scanEnables production testability and interconnect verification without additional test fixtures or probes
Programmable output impedance (ZQ)Allows dynamic tuning of driver strength to match PCB trace impedance - critical for signal integrity at 666 MT/s

Applications

High-Speed Network Packet BufferingTelecom Line Card Data Buffers

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress packet buffer with zero-bus-turnaround concurrency between parser (write) and scheduler (read).

Use Value: 666 MT/s DDR bandwidth sustains 10 Gbps+ full-duplex traffic; 1.5-cycle latency aligns with pipeline stages in ASIC-based forwarding engines.

Use Scenario: Temporary storage of voice-over-IP (VoIP) frames and TDM channelized data in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly with SerDes PHYs and DSP subsystems using C/C + CQ/CQ timing.

Use Value: Echo clocks eliminate need for programmable delay lines in FPGA-based capture logic, reducing design iteration time and jitter sensitivity.

Baseband Processing in Wireless InfrastructureTest Equipment Pattern Memory

Use Scenario: Holding precomputed FFT coefficients and real-time IQ sample buffers in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: High-throughput memory co-located with multi-core DSP clusters; accessed via AXI4-Stream or custom parallel interfaces.

Use Value: Independent RPS/WPS enables simultaneous coefficient fetch (read) and new sample storage (write), maximizing compute utilization.

Use Scenario: Storing stimulus/response vectors for high-speed digital pattern generators and ATE systems operating above 300 MHz.

IC Role / Device Role / Timing Role: Deterministic-latency memory delivering synchronized bursts to parallel pin electronics (PE) drivers and comparators.

Use Value: DOFF-selectable latency allows matching to tester controller pipeline depth; JTAG support enables in-system calibration and fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120L536-bit × 512K, 250 MHz max clock, no echo clocks, LVDS I/OLower bandwidth, differential signaling only - requires LVDS termination and layout disciplineSelect when system uses LVDS PHYs and bandwidth ≤ 500 MT/s suffices; avoid if echo-clock–based capture is required.
ISSI IS61WV102418BAsynchronous 1M × 18 SRAM, 15 ns access, single-port, 3.3 V onlyNo DDR, no burst, no separate ports - incompatible timing model and interface protocolOnly viable for legacy redesigns where QDR II features are unused; not a functional substitute.

Compared with IDT72T36120L5 and IS61WV102418B, CY7C1312KV18 uniquely delivers 666 MT/s DDR bandwidth with echo-clock–assisted capture and QDR II's concurrent read/write capability - essential for modern packet-processing architectures where bus efficiency and timing determinism are non-negotiable.

Availability

CY7C1312KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data buffers, and baseband processing applications requiring stable component supply, long-term lifecycle support, and guaranteed FBGA-165 sourcing.

Supply support for CY7C1312KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR® II SRAM product line targets high-bandwidth, low-latency buffering in networking and telecom infrastructure - specifically engineered to replace asynchronous SRAMs and simplify DDR controller design through deterministic burst and echo-clock interfaces.

FAQ

What is the function of the DOFF pin on CY7C1312KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables native QDR II operation with 1.5-cycle read latency; when LOW (or tied to VSS), it reverts to QDR I mode with 1-cycle latency. This provides backward compatibility while preserving timing margin for pipeline-critical designs.

Can CY7C1312KV18 operate with only one clock domain (K only)?

Yes - in single-clock mode, K serves as both input and output clock; C/C are unused, and Q[17:0] are driven on K/K edges. However, echo clocks CQ/CQ remain inactive, and deskew benefits are lost. This mode simplifies clock routing but sacrifices timing margin at maximum frequency.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external resistor (RQ) to ground; internal circuitry sets Q[17:0] and CQ/CQ driver impedance to 0.2 × RQ. Typical RQ = 240 Ω yields 48 Ω output impedance. Direct connection to VDDQ enables minimum impedance (~24 Ω); ZQ must never be left floating or tied to GND.

Is JTAG boundary scan supported during normal operation?

Yes - JTAG 1149.1 functionality operates independently of memory operation. TAP signals (TCK, TMS, TDI, TDO) are sampled asynchronously and do not interfere with K/K or C/C timing. Boundary scan can be performed in-system without halting data traffic or resetting the device.

CY7C1312KV18-300BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1312KV18-300BZXI FAQ

1.How can I place an order for CY7C1312KV18-300BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1312KV18-300BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1312KV18-300BZXI reliable?

The price and inventory of CY7C1312KV18-300BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312KV18-300BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1312KV18-300BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1312KV18-300BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1312KV18-300BZXI?

CY7C1312KV18-300BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1312KV18-300BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1312KV18-300BZXI?

For technical support, including CY7C1312KV18-300BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312KV18-300BZXI requirements.

6.How does Aetrix verify that CY7C1312KV18-300BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1312KV18-300BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312KV18-300BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1312KV18-300BZXI?

All CY7C1312KV18-300BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312KV18-300BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1312KV18-300BZXI part is unused and in its original packaging.

Return procedure for CY7C1312KV18-300BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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