Infineon Technologies CY7C1312KV18-300BZXIT

Overview

CY7C1312KV18-300BZXIT from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with two-word bursts per access and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1312KV18-300BZXIT datasheet, CY7C1312KV18-300BZXIT pinout, CY7C1312KV18-300BZXIT application, or CY7C1312KV18-300BZXIT equivalent, key selection criteria include dual-clock DDR timing (K/K and C/C), echo clocks (CQ/CQ) for source-synchronous capture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and HSTL-compatible 165-ball FBGA packaging.

Technical Context

The CY7C1312KV18-300BZXIT implements QDR II architecture with fully independent read and write pipelines, each synchronized to dedicated rising-edge-triggered clocks (K/K for address/control/data input; C/C for output timing). Its two-word burst transfers occur on every clock edge, enabling 600 MB/s sustained bandwidth at 300 MHz.

It uses synchronous self-timed writes, multiplexed 19-bit address bus latched on alternating K/K edges, and programmable output impedance via ZQ pin. Echo clocks CQ/CQ are free-running, phase-aligned to C/C, and critical for deskewing high-speed data capture in multi-device memory subsystems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10PA and ISSI IS61WV102418B, the CY7C1312KV18-300BZXIT uniquely delivers 600 MB/s DDR bandwidth with echo-clock–assisted timing closure and configurable read latency-critical for modern packet-processing and test instrumentation systems.

Availability

CY7C1312KV18-300BZXIT is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, and baseband processor L2 cache requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1312KV18-300BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The CY7C1312KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1312KV18-300BZXIT?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for QDR II operation; when LOW, it forces 1-cycle latency compatible with QDR I timing. This setting directly affects controller pipeline depth and must be held stable during operation - it is not dynamically switchable mid-operation.

Can CY7C1312KV18-300BZXIT operate with only one clock signal (K) instead of K/K and C/C pairs?

Yes - the device supports single-clock mode where K serves as both input and output clock (C = K, C = K), and CQ/CQ derive from K/K. In this mode, echo clock functionality is retained but deskew capability is reduced versus dual-clock operation. All timing parameters shift accordingly, and the device must be configured per Section 7 of the datasheet.

How does the ZQ pin affect signal integrity in high-speed layouts?

The ZQ pin calibrates output driver impedance to match the PCB trace (typically 50 Ω), reducing reflections and jitter. When tied to a precision 240 Ω resistor to ground, it sets Q/CQ output impedance to 48 Ω (0.2 × 240 Ω). Incorrect ZQ termination causes overshoot, undershoot, or timing violations - it must never be left floating or tied directly to GND.

Is CY7C1312KV18-300BZXIT pin-compatible with other members of the CY7C13xxKV18 family?

No - CY7C1312KV18-300BZXIT (1M × 18) uses a 165-ball FBGA with 19 address lines (A[18:0]), while CY7C1314KV18 (512K × 36) uses the same package but different pin assignments for BWS[3:0], D[35:0], and Q[35:0]. Pin mapping differs significantly; direct replacement requires layout revision and signal reassignment.