Infineon Technologies CY7C1313BV18-167BZCT

Overview

CY7C1313BV18-167BZCT from Cypress Semiconductor is a 1M × 18-bit, 18-Mbit QDR-II SRAM with separate read/write ports, 167 MHz maximum operating frequency (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements synchronous pipelined burst reads/writes of four 18-bit words per access and targets high-bandwidth packet buffering in network line cards and switch fabric interfaces.

For engineers reviewing the CY7C1313BV18-167BZCT datasheet, CY7C1313BV18-167BZCT pinout, CY7C1313BV18-167BZCT application, or CY7C1313BV18-167BZCT equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted DDR timing alignment, HSTL-compatible 18-bit bidirectional data width, and FBGA-165 package compatibility with high-density routing constraints.

Technical Context

The device uses QDR-II architecture with physically independent read and write data paths-Q[17:0] outputs and D[17:0] inputs-eliminating bus turnaround overhead. Address latching occurs on alternating rising edges of K/K clocks, enabling full-duplex operation without arbitration logic.

Read and write operations are synchronized to dedicated clock pairs: K/K for address/control/data input registration, and C/C for output timing with echo clocks CQ/CQ referenced to C/C. A Delay Lock Loop (DLL) ensures precise data placement relative to output clocks, supporting stable 600 Mbps DDR transfers at 300 MHz clock frequency.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch, 13 mm × 15 mm body size, and 1.4 mm height. Designed for automated surface-mount assembly and high-signal-integrity routing in telecom and networking equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port burst SRAM applications.

Compared with CY7C1313BV18-250BZCT, the -167BZCT trades peak bandwidth for lower power and relaxed timing margins; compared with AS7C3256B-167JC, it delivers true dual-port concurrency and DDR timing infrastructure essential for modern packet-processing pipelines.

Availability

CY7C1313BV18-167BZCT is available at Aetrix Electronics and suitable for network packet buffering, switch fabric interface, telecom line card memory, and high-speed test equipment requiring stable component supply, long-lifecycle support, and consistent FBGA-165 packaging.

Supply support for CY7C1313BV18-167BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.

This device belongs to Cypress's QDR-II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in high-speed networking and telecommunications infrastructure.

FAQ

What is the function of the ZQ pin on CY7C1313BV18-167BZCT?

The ZQ pin calibrates output driver impedance to match the system data bus. When connected to a precision resistor to ground, it sets CQ, CQ, and Q[17:0] output impedance to 0.2 × RQ. Alternatively, tying ZQ to VDDQ enables minimum-impedance mode. This calibration ensures signal integrity and reduces reflections on high-speed traces without external termination resistors.

Can CY7C1313BV18-167BZCT operate in single-clock mode?

Yes. In single-clock mode, the device uses K as both input and output clock reference: K drives input registers and Q[17:0] output registers, while C/C and CQ/CQ are unused. This simplifies clock distribution but reduces maximum achievable bandwidth compared to dual-clock mode, where C/C provide independent output timing control and deskewing capability.

How does the 4-word burst architecture reduce system address bus loading?

Each read or write access transfers four consecutive 18-bit words using a single address. The internal address counter increments automatically after each word, so only one address setup is required per burst. This cuts address bus toggling frequency by 75% versus single-word access, lowering EMI, reducing controller overhead, and easing timing closure on shared address buses in multi-SRAM systems.

What is the role of BWS[1:0] in CY7C1313BV18-167BZCT?

BWS[1:0] are active-LOW byte write select signals controlling 9-bit granularity: BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. When either is deasserted, the corresponding 9-bit byte is ignored during the write burst, preserving existing data in those bits. This eliminates need for read-modify-write cycles when updating partial words-critical for efficient header modification in packet processing.