Infineon Technologies CY7C1313KV18-250BZCT
- Part No.:
- CY7C1313KV18-250BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1313KV18-250BZCT.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1313KV18-250BZCT from Cypress Semiconductor is a 1 M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 3.6 Gbps bandwidth via DDR interfaces on both ports using four-word burst transfers and supports concurrent read/write transactions in high-speed networking and packet buffering applications.
For engineers reviewing the CY7C1313KV18-250BZCT datasheet, CY7C1313KV18-250BZCT pinout, CY7C1313KV18-250BZCT application, or CY7C1313KV18-250BZCT equivalent, key selection considerations include its 1M×18 organization, 165-ball FBGA package, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, echo clock (CQ) support for timing margin, and HSTL-compatible variable-drive outputs.
Technical Context
This QDR II SRAM implements dual independent synchronous ports with pipelined address latching on alternating K-clock edges, enabling true concurrency without bus turnaround. Read and write data paths are fully separated-D[17:0] inputs and Q[17:0] outputs operate at double data rate using dedicated C/C̄ and K/K̄ clocks.
The device uses on-chip PLL for precise data placement and supports programmable impedance via ZQ pin. Its depth expansion capability relies on RPS/WPS controls, while byte write select (BWS[1:0]) enables partial writes to 9-bit subwords within the 18-bit data path-critical for efficient packet header updates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1 M × 18 (18-Mbit total, 256 K × 18 internal array) |
| Maximum Clock Frequency | 250 MHz (40 ns period); supports full-speed DDR transfers at 500 MT/s per port |
| Read Latency | 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines pipeline depth in controller design |
| Core Supply Voltage | 1.8 V ± 0.1 V; fixed low-voltage core enables power-efficient high-bandwidth operation |
| I/O Supply Range | 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V logic families |
| Burst Length | Four-word burst per access; reduces address bus toggling frequency by 4× vs. single-word mode |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm); standard footprint for high-density PCB layout |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edge of K clock; supports partial writes via BWS[1:0] |
| Q[17:0] | Synchronous read data output | 18-bit DDR output driven on rising edges of C/C̄ clocks; echo-clocked for timing closure |
| K / K̄ | Write/read address and control clock pair | Separate differential clocks latch A[17:0], WPS, RPS, BWS[1:0]; only rising edges used |
| C / C̄ | Read data output clock pair | Drives Q[17:0] outputs; matched to CQ for source-synchronous capture |
| CQ / CQ̄ | Echo clock outputs | Phase-aligned copies of C/C̄; simplify high-speed FPGA/ASIC data capture |
| WPS / RPS | Write/read port select | Active-low enables independent port activation; essential for depth expansion and port arbitration |
| BWS[1:0] | Byte write select | Two active-low signals controlling 9-bit subword writes (BWS0 → D[8:0], BWS1 → D[17:9]) |
| DOFF | Read latency mode control | HIGH = 1.5-cycle latency (pipelined), LOW = 1-cycle latency (QDR I compatibility) |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor for HSTL output driver calibration |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates bus turnaround overhead; enables simultaneous packet ingress/egress in switch ASICs |
| Four-word DDR burst | Delivers 72-bit data per clock cycle (18-bit × 4) - matches typical network packet word widths |
| Echo clock (CQ/CQ̄) support | Provides deterministic, low-skew timing reference for FPGA input registers - critical above 250 MHz |
| Programmable output drive strength | ZQ-calibrated HSTL outputs ensure signal integrity across varied trace lengths and loads |
| JTAG 1149.1 boundary scan | Enables production test and interconnect verification without custom test fixtures |
Applications
| Packet Buffering in L2/L3 Switches | Network Processor Data Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in cut-through switching pipelines. IC Role / Device Role / Timing Role: Dual-port SRAM acting as temporary frame storage with zero-latency read-after-write capability. Use Value: Concurrent read/write allows real-time frame modification (e.g., VLAN tag insertion) without stalling traffic flow. | Use Scenario: Holding packet headers and metadata during deep packet inspection in multi-core NPU clusters. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory accessed by multiple processing engines via dedicated ports. Use Value: 3.6 Gbps aggregate bandwidth sustains >10 Gbps line-rate processing with minimal queuing delay. |
| Baseband Processing in 4G LTE eNodeB | High-Speed Test Equipment Memory Buffer |
Use Scenario: Interfacing between digital front-end (DFE) and channel processing units in wireless base stations. IC Role / Device Role / Timing Role: Synchronization buffer absorbing timing mismatches between ADC/DAC sampling and FFT processing blocks. Use Value: 1.5-cycle latency mode (DOFF = HIGH) aligns with pipeline stages in OFDM symbol processing chains. | Use Scenario: Capturing high-speed serial data streams (e.g., PCIe Gen3, SATA III) for protocol analysis and error injection. IC Role / Device Role / Timing Role: Real-time streaming buffer feeding pattern generators and comparators in ATE systems. Use Value: Echo clocks (CQ/CQ̄) enable reliable >250 MHz data capture in FPGA-based acquisition logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 1 M × 18 QDR II+ SRAM; 333 MHz max, 1.5 V core, LVDS I/O | Higher speed but requires differential signaling; incompatible voltage and interface | Select only if system already uses LVDS infrastructure and needs >250 MHz bandwidth |
| ISSI IS61WV102418B | 1 M × 18 sync SRAM; 166 MHz max, single-port, SSTL-2 I/O, no echo clocks | Lacks concurrent read/write and burst capability; lower bandwidth, simpler timing | Choose for cost-sensitive, non-concurrent applications where 1.8 Gbps suffices |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1313KV18-250BZCT uniquely balances 250 MHz QDR II performance, HSTL compatibility, echo-clock timing aid, and 1.8 V core efficiency - making it optimal for mid-bandwidth packet buffering where LVDS complexity is unnecessary and single-port latency is unacceptable.
Availability
CY7C1313KV18-250BZCT is available at Aetrix Electronics and suitable for packet buffering in enterprise switches, network processor cache subsystems, LTE baseband synchronization, and high-speed test equipment requiring stable component supply and long-term industrial availability.
Supply support for CY7C1313KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
CY7C1313KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1313KV18-250BZCT?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted LOW, it configures the device for 1-cycle read latency (QDR I compatibility); when HIGH, it enables 1.5-cycle latency for optimized QDR II throughput. This setting directly affects controller pipeline depth and must be fixed at power-up.
How does the BWS[1:0] signal operate in the 18-bit configuration?
BWS[1:0] are active-low byte write select signals that divide the 18-bit data path into two 9-bit subwords: BWS0 controls D[8:0], and BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit segment is masked during write operations, preserving existing data in those bits.
Can CY7C1313KV18-250BZCT operate with a single clock domain instead of differential K/K̄ and C/C̄?
Yes - the device supports single-ended clocking: K and C can be driven as single-ended signals (with K̄ and C̄ tied to VDD or VSS per datasheet guidelines), though differential operation is recommended for jitter reduction and timing margin at 250 MHz. Echo clocks remain functional in either mode.
What is the purpose of the ZQ pin and how is it used?
ZQ connects to an external 240 Ω resistor to ground for on-die termination calibration. It adjusts HSTL output driver impedance to match PCB trace characteristics, ensuring signal integrity across temperature and voltage variations - required before normal operation per datasheet power-up sequence.
CY7C1313KV18-250BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1313KV18-250BZCT FAQ
1.How can I place an order for CY7C1313KV18-250BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1313KV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1313KV18-250BZCT reliable?
The price and inventory of CY7C1313KV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1313KV18-250BZCT is usually 5 days.
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Once your CY7C1313KV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1313KV18-250BZCT?
For technical support, including CY7C1313KV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1313KV18-250BZCT requirements.
6.How does Aetrix verify that CY7C1313KV18-250BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1313KV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1313KV18-250BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1313KV18-250BZCT?
All CY7C1313KV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1313KV18-250BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1313KV18-250BZCT part is unused and in its original packaging.
Return procedure for CY7C1313KV18-250BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1313KV18-250BZCT Tags

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