Infineon Technologies CY7C1313KV18-250BZXI

Overview

CY7C1313KV18-250BZXI from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write operations via independent ports and supports high-bandwidth networking equipment requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1313KV18-250BZXI datasheet, CY7C1313KV18-250BZXI pinout, CY7C1313KV18-250BZXI application, or CY7C1313KV18-250BZXI equivalent, key selection criteria include 1-cycle vs. 1.5-cycle read latency (DOFF-controlled), echo clock (CQ/CQ) timing margining, HSTL-compatible 18-bit DDR I/O, and FBGA-165 package compatibility with high-density routing constraints.

Technical Context

This device implements QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to align data valid windows at the receiver.

Internally, it organizes memory as four 256 K × 18 arrays, latching addresses on alternating rising edges of K, supporting synchronous self-timed writes and full data coherency. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, directly affecting system timing closure in FPGA-based packet buffers.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1313KV18-300BZXI, the -250BZXI trades 12% bandwidth for 12% lower power and relaxed timing closure; versus AS7C331024B-250BIN, it provides true concurrent access and source-synchronous DDR timing - essential for data-plane acceleration.

Availability

CY7C1313KV18-250BZXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, FPGA-based protocol accelerators, and baseband processing caches requiring stable component supply across multi-year production cycles.

Supply support for CY7C1313KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1313KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-processing infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1313KV18-250BZXI?

The DOFF pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it configures 1-cycle latency for minimal access delay. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.

Can CY7C1313KV18-250BZXI operate with only one clock domain (K-only) instead of separate K/K and C/C pairs?

Yes - the device supports single-clock-domain operation where K drives both input and output registers, eliminating need for separate C/C clocks. In this mode, echo clocks CQ/CQ still function, but output timing is referenced to K instead of C/C, reducing clock routing complexity at the cost of slightly reduced timing margin.

How does the BWS[1:0] signal enable partial writes in CY7C1313KV18-250BZXI?

BWS[1:0] consists of two active-Low signals that independently gate 9-bit byte groups: BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is deasserted, corresponding data bits are ignored during write cycles - allowing 9-bit or 18-bit writes without read-modify-write overhead, preserving unselected word portions.

Is the 165-ball FBGA package of CY7C1313KV18-250BZXI compatible with standard reflow profiles for lead-free assembly?

Yes - the BZXI suffix denotes Pb-free packaging qualified for IPC/JEDEC J-STD-020D-compliant lead-free reflow, with peak temperature up to 260°C. Thermal pad (VSS balls) must be soldered per Cypress layout guidelines to ensure mechanical reliability and thermal dissipation under 440 mA max operating current.