Infineon Technologies CY7C1314BV18-167BZI

Overview

CY7C1314BV18 from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, dual independent read/write ports, 167 MHz maximum operating frequency (6 ns cycle time), 1.8 V core supply (VDD), and 1.4–1.8 V I/O supply (VDDQ), deployed in high-bandwidth packet buffering for network switches.

For engineers reviewing the CY7C1314BV18 datasheet, CY7C1314BV18 pinout, CY7C1314BV18 application, or CY7C1314BV18 equivalent, key selection criteria include burst depth (2-word), DDR timing on both ports, echo clock support (CQ/CQ), HSTL-compatible output drive, and FBGA-165 package compatibility with high-speed memory bus layouts.

Technical Context

The device implements synchronous pipelined QDR-II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses rising-edge-triggered K/K clocks for address/data capture and C/C clocks for output timing, enabling concurrent read and write operations at full bandwidth.

Each access delivers two sequential 36-bit words per clock cycle via DDR interfaces-500 MT/s effective data rate at 250 MHz clock (though this part is rated for 167 MHz). A Delay Lock Loop (DLL) aligns internal timing, and echo clocks (CQ/CQ) referenced to C/C simplify source-synchronous data capture in multi-device systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T36115L10BG and IS61QW25636A-167BQI, CY7C1314BV18 offers integrated DLL and echo clocks for relaxed controller timing, while trading off maximum frequency headroom and vendor-specific feature support.

Availability

CY7C1314BV18 is available at Aetrix Electronics and suitable for network switching, telecom infrastructure, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1314BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-forwarding and real-time signal capture applications.

FAQ

What is the minimum VDDQ voltage supported by CY7C1314BV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause HSTL output drive failure or timing violations. The 1.4 V lower limit is specified in the DC Electrical Characteristics table of the datasheet (Rev. *F, page 12), and applies across commercial temperature range (0°C to 70°C).

Can CY7C1314BV18 operate without connecting the ZQ pin?

No. ZQ must be connected either to an external resistor to ground (for impedance tuning) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or tying it to VSS violates the Absolute Maximum Ratings and causes undefined output driver behavior, including potential bus contention or excessive current draw.

Does CY7C1314BV18 support single-clock-domain operation?

Yes. When K and K are tied together, and C and C are tied together, the device operates in single-clock mode. In this configuration, K serves as the master clock for both ports, and Q[35:0] is driven on rising edges of K. The DLL remains active, and CQ/CQ become copies of K/K, preserving echo functionality.

How many address bits are required for CY7C1314BV18's 512K × 36 organization?

18 address bits (A[17:0]) are required. Internally, the device is organized as two 256K × 36 arrays, and the address bus is multiplexed for both read and write ports. This matches the pinout shown in Figure 4 (page 5 of datasheet Rev. *F), where only balls A1 through P1 carry valid address signals.