Infineon Technologies CY7C1314BV18-250BZXC

Overview

CY7C1314BV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR-II SRAM with synchronous pipelined architecture, dual independent read/write ports, 250 MHz clock operation (500 MT/s DDR), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers full data coherency, on-chip self-timed writes, and HSTL-compatible I/O for high-speed networking buffer applications.

For engineers reviewing the CY7C1314BV18 datasheet, CY7C1314BV18 pinout, CY7C1314BV18 application, or CY7C1314BV18 equivalent, key selection criteria include burst depth (2-word), DDR timing alignment via echo clocks (CQ/CQ), byte write select granularity (BWS[3:0]), DLL-controlled output placement, and VDD/VDDQ separation (1.8 V core / 1.4–1.8 V I/O).

Technical Context

This SRAM implements true QDR-II architecture: separate K/K clocks latch read/write addresses independently, while C/C clocks drive synchronized DDR read outputs with echo clocks (CQ/CQ) referenced to each. The internal 256K × 36 memory array is accessed via multiplexed 18-bit address bus (A[17:0]), enabling depth expansion using RPS/WPS and BWS[3:0] controls.

All data transfers occur on rising edges only - K/K for input sampling, C/C for output driving - with DLL ensuring precise 500 MT/s data-eye alignment. Write operations are internally self-timed and fully synchronous; read bursts deliver two consecutive 36-bit words per access with no bus turnaround.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102432BLL-15BLI, CY7C1314BV18 uniquely delivers 250 MHz DDR dual-port operation with DLL-aligned echo clocks - essential for deterministic 10+ Gbps packet buffering where timing margin and concurrency are non-negotiable.

Availability

CY7C1314BV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, telecom baseband processing, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1314BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C1314BV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent read/write memory access in multi-gigabit packet-processing infrastructure.

FAQ

What is the minimum supported VDDQ voltage for CY7C1314BV18?

The device supports VDDQ from 1.4 V to 1.8 V. At 1.4 V, HSTL output drive strength is reduced but remains compliant with HSTL Class I specifications; timing parameters shift slightly - see Table 10 in Rev. *F datasheet for derated tAC and tCO values under 1.4 V operation.

Can CY7C1314BV18 operate with only K and C clocks (single-clock mode)?

Yes - when K is tied to C and K is tied to C, the device enters single-clock mode. In this configuration, Q[35:0] outputs are driven on K/K edges instead of C/C, and CQ/CQ become echoes of K/K. All functionality remains intact, though echo-clock deskew capability is lost.

How does ZQ calibration affect signal integrity on Q[35:0] outputs?

ZQ connects to an external resistor (typically 120 Ω) to ground, calibrating output driver impedance to 24 Ω (0.2 × 120 Ω). This matches standard 50 Ω PCB traces with parallel termination, minimizing reflections and maintaining <10% overshoot under 500 MT/s switching - confirmed in IBIS model v1.2.

Is DOFF pin required to be actively driven for normal operation?

No - DOFF must be pulled HIGH (to VDDQ) for normal DLL-enabled operation. Leaving it floating or connecting to VDDQ via 10 kΩ resistor is acceptable; grounding it disables the DLL and invalidates all timing specs in the datasheet - only used in specific characterization or low-power test modes.