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Infineon Technologies CY7C1314KV18-250BZC

Part No.:
CY7C1314KV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1314KV18-250BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:116

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Product details

Overview

CY7C1314KV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 3.6 Gbps bandwidth via DDR interfaces on both ports, supports two-word burst transfers, and uses echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1314KV18 datasheet, CY7C1314KV18 pinout, CY7C1314KV18 application, or CY7C1314KV18 equivalent, key selection criteria include its 250 MHz maximum frequency, 165-ball FBGA package, DOFF-configurable 1- or 1.5-cycle read latency, and support for depth expansion via RPS/WPS and BWS[3:0] signals.

Technical Context

The CY7C1314KV18 implements QDR II architecture with fully independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Read and write operations are initiated on rising edges of complementary K/K clocks, while output data is clocked by C/C with synchronized echo clocks CQ/CQ to compensate for flight-time skew.

It features synchronous self-timed writes, programmable output impedance via ZQ pin, JTAG 1149.1 boundary scan, and HSTL-compatible variable-drive outputs. The device operates in dual-clock mode by default but supports single-clock mode when C/C are tied to K/K, reducing timing complexity at the cost of reduced skew margin.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 configuration)
Max Clock Frequency 250 MHz - defines 4 ns cycle time and maximum sustained throughput
Data Bus Width 36-bit bidirectional I/O (D[35:0]/Q[35:0]) - enables two 36-bit words per access
Core Supply Voltage 1.8 V ±0.1 V - sets minimum power delivery requirements and thermal profile
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system logic
Read Latency 1 or 1.5 cycles - selected by DOFF pin state (LOW = QDR I mode, HIGH = QDR II mode)
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in space-constrained designs

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Write Data Input 36-bit synchronous input bus sampled on rising edge of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Read Data Output 36-bit synchronous output bus driven on rising edge of C/C; tristated when RPS is deasserted
RPS Read Port Select Active-low signal enabling read transactions; controls output driver enable and burst initiation
WPS Write Port Select Active-low signal enabling write transactions; gates D[35:0] and BWS[3:0] sampling
BWS[3:0] Byte Write Select Four active-low signals controlling 9-bit byte lanes (BWS0–BWS3 each cover 9 bits of D[35:0])
A[17:0] Address Input 18-bit multiplexed address bus latched on alternating K/K edges for read/write address separation
K, K Input Clock Pair Complementary clocks driving all synchronous inputs; rising edges initiate port accesses and latch addresses/data
C, C Output Clock Pair Complementary clocks governing Q[35:0] output timing; used with CQ/CQ for source-synchronous capture
CQ, CQ Echo Clock Outputs Free-running clocks phase-aligned to C/C; simplify PCB layout by enabling controller-side deskew of data/clock paths
ZQ Impedance Calibration Input Connects to external resistor to ground to tune Q[35:0]/CQ/CQ output drive strength to match 50 Ω trace impedance
DOFF Read Latency Control High = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode)

Key Features

Feature Design Value
Separate Read/Write Ports Eliminates bus turnaround overhead and data contention-enables true concurrent read/write at full bandwidth
Two-Word Burst Architecture Delivers 72 bits per access (2 × 36-bit words) without additional address setup-reduces controller address generation burden
DDR Interfaces on Both Ports 666 MT/s effective data rate per port at 250 MHz clock-doubles throughput versus SDR at same clock frequency
Echo Clocks (CQ/CQ) Enable source-synchronous timing closure in >500 Mbps systems-removes need for complex fly-by routing or dynamic deskew logic
JTAG 1149.1 Boundary Scan Supports IEEE-compliant test access for production ICT and board-level diagnostics-no external test fixtures required
Programmable Output Impedance ZQ pin allows real-time matching to PCB trace impedance-reduces signal reflections and improves eye diagram margin

Applications

Packet Buffering Network Switch Fabric

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer between line cards and switch fabric ASICs.

Use Value: Concurrent read/write capability eliminates arbitration delays, enabling deterministic 250 MHz packet processing without pipeline stalls.

Use Scenario: Interfacing between traffic manager and scheduler in carrier-grade routers.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a decoupling buffer for cell-based or packet-based scheduling decisions.

Use Value: Echo clocks (CQ/CQ) align data capture timing across multiple parallel SRAMs, ensuring consistent latency across fabric lanes.

Telecom Line Card Memory Baseband Processing Buffer

Use Scenario: Holding frame buffers and control tables in 4G/LTE base station remote radio units.

IC Role / Device Role / Timing Role: Burst-access memory supporting TDMA slot alignment and channelized data flow.

Use Value: DOFF-selectable 1-cycle latency (QDR I mode) meets strict 3GPP timing budgets for real-time PHY layer buffering.

Use Scenario: Temporary storage of FFT/IFFT results and channel estimation data in massive MIMO baseband units.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with FPGA-based DSP engines.

Use Value: 36-bit wide interface reduces memory transaction count by 2× versus 18-bit alternatives-lowers controller logic utilization and power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 10 ns access time, 165-ball FBGA, 512K × 36, 1.8 V core, but only supports 200 MHz max (5 ns cycle) Limited to lower-bandwidth switching fabrics where 250 MHz is not required Select when system clock is ≤200 MHz and legacy IDT footprint compatibility is needed
ISSI IS61WV102432BLL-15BLI Asynchronous SRAM, 1M × 32, 3.3 V I/O, no DDR or echo clocks-requires external bus turnaround logic Suitable only for non-concurrent, lower-speed control-plane memory where latency tolerance >10 ns Choose only for cost-sensitive, non-real-time applications where QDR II features are unnecessary

Compared with IDT72T3615L10PA and IS61WV102432BLL-15BLI, CY7C1314KV18 uniquely delivers 250 MHz DDR bandwidth with echo-clock timing support-making it the only option among the three capable of sustaining 3.6 Gbps in a single device without external deserialization or clock management.

Availability

CY7C1314KV18 is available at Aetrix Electronics and suitable for packet buffering, network switch fabric, and telecom line card applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for CY7C1314KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1314KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-speed, low-latency data buffering in packet-switched infrastructure where deterministic timing and concurrent access are critical.

FAQ

What is the function of the DOFF pin on CY7C1314KV18?

The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This allows backward compatibility with legacy QDR I controllers while enabling higher bandwidth in new designs.

Can CY7C1314KV18 operate with a single clock instead of differential K/K and C/C pairs?

Yes-CY7C1314KV18 supports single-clock mode by connecting K to C and K to C. In this configuration, all timing references derive from K/K, eliminating the need for dedicated output clocks but removing echo-clock deskew benefits and reducing maximum reliable data rate due to increased clock-to-data skew.

How does the ZQ pin affect signal integrity in high-speed layouts?

The ZQ pin calibrates internal output driver impedance to match the system's data bus characteristic impedance (typically 50 Ω). When connected to a precision 240 Ω resistor to ground, it configures outputs for 0.2 × 240 Ω = 48 Ω drive strength-minimizing reflections and improving signal eye opening at 666 MT/s.

Is CY7C1314KV18 pin-compatible with other devices in the CY7C13xxKV18 family?

No-CY7C1314KV18 (512K × 36) uses a distinct 165-ball FBGA pinout optimized for its 36-bit interface and BWS[3:0] signals. It is not pin-compatible with CY7C1312KV18 (1M × 18), which has different address width (A[18:0] vs. A[17:0]), fewer byte-write selects (BWS[1:0]), and alternate ball assignments for D/Q signals.

CY7C1314KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1314KV18-250BZC FAQ

1.How can I place an order for CY7C1314KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1314KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1314KV18-250BZC reliable?

The price and inventory of CY7C1314KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1314KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1314KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1314KV18-250BZC?

CY7C1314KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1314KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1314KV18-250BZC?

For technical support, including CY7C1314KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1314KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1314KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1314KV18-250BZC?

All CY7C1314KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1314KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1314KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1314KV18-250BZC Tags

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