Infineon Technologies CY7C1314KV18-250BZCT

Overview

CY7C1314KV18-250BZCT from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum clock frequency (400 ps cycle time), 1.8 V core supply (VDD = 1.8 V ±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It features separate read/write ports, DDR interfaces on both ports, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1314KV18-250BZCT datasheet, CY7C1314KV18-250BZCT pinout, CY7C1314KV18-250BZCT application, or CY7C1314KV18-250BZCT equivalent, key selection criteria include its 36-bit × 512K organization, 165-ball FBGA package, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and JTAG 1149.1 compliance for boundary scan testability.

Technical Context

The device implements a synchronous pipelined QDR II architecture with physically independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent read and write transactions without bus turnaround.

It uses dual DDR interfaces: data transfers occur on both rising edges of K/K for writes and C/C for reads, achieving effective 500 Mbps per data line at 250 MHz. The integrated PLL ensures precise data placement, while echo clocks CQ/CQ are phase-aligned to C/C to simplify timing closure in high-speed SerDes and switch fabric designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102436B, CY7C1314KV18-250BZCT provides superior timing robustness via echo clocks and impedance tuning, plus configurability (DOFF) and testability (JTAG) essential for carrier-class switch fabric designs.

Availability

CY7C1314KV18-250BZCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1314KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking ASICs, switch fabrics, and telecom infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1314KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle latency for optimal bandwidth; when LOW, it reverts to QDR I mode with 1-cycle latency for backward compatibility. This setting is sampled synchronously on the rising edge of K and remains active until changed.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) tied to ground, allowing the device to calibrate its HSTL output drivers to 0.2×RQ impedance. For example, a 200 Ω RQ yields ~40 Ω driver impedance. Direct connection to VDDQ enables minimum impedance mode (~20 Ω), while floating or grounding ZQ is prohibited and may cause undefined behavior.

Can CY7C1314KV18-250BZCT operate with only one clock signal?

Yes - it supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate input/output clock pairs. In this configuration, data is clocked using K/K only, and CQ/CQ are generated relative to K/K. However, dual-clock mode is required to achieve full timing margin and echo-clock benefits at 250 MHz.

What is the purpose of BWS[3:0] signals in write operations?

BWS[3:0] are active-LOW byte write selects that enable partial-word writes without read-modify-write cycles. Each controls a 9-bit lane: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27]. Deasserting any BWS prevents corresponding byte from being updated, preserving existing data in those bits - critical for efficient statistics counter updates.