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Infineon Technologies CY7C1314KV18-250BZI

Part No.:
CY7C1314KV18-250BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1314KV18-250BZI.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,220

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Product details

Overview

CY7C1314KV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 3.6 Gbps bandwidth via DDR interfaces on both ports, supports two-word burst transfers, and uses echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1314KV18 datasheet, CY7C1314KV18 pinout, CY7C1314KV18 application, or CY7C1314KV18 equivalent, key selection criteria include its 165-ball FBGA package, DOFF-configurable 1- or 1.5-cycle read latency, synchronous self-timed writes, JTAG 1149.1 test access, and HSTL-compatible variable-drive outputs.

Technical Context

The CY7C1314KV18 implements QDR II architecture with fully independent read and write ports sharing a single 18-bit address bus (A[17:0]), enabling concurrent transactions without bus turnaround. Address latching occurs on alternate rising edges of K/K clocks, and all synchronous inputs are registered to K or K.

Read data is output-synchronized to C/C clocks with echo clocks CQ/CQ referenced to those outputs; write data is sampled on K/K rising edges. The device includes a PLL for precise data placement, programmable output impedance via ZQ, and four byte-write selects (BWS[3:0]) for granular 9-bit write control across its 36-bit data width.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 36-bit (18 Mbit total); dual 256K × 36 arrays enable depth expansion
Max Clock Frequency 250 MHz (4 ns cycle time); supports 500 MT/s DDR data rate per port
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines timing margin for controller design
Supply Voltages Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; enables interoperability with 1.5 V or 1.8 V systems
Burst Length Fixed two-word burst per access; delivers 72 bits (36 × 2) per clock cycle on read/write
Output Interface HSTL Class I compatible with programmable drive strength; ZQ pin calibrates Q[35:0], CQ, CQ to 0.2×RQ
JTAG Support IEEE 1149.1 compliant TAP controller with boundary scan, instruction register, and IDCODE support

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.

Pin Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide bus sampled on K/K rising edges; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output driven on C/C rising edges; tristated when RPS inactive
A[17:0] Multiplexed address input 18-bit address shared by read/write ports; latched on alternating K/K edges for pipelined access
RPS / WPS Active-low port select Independent enables for read/write ports; deselecting disables port activity and tristates outputs/ignores inputs
BWS[3:0] Byte write select Four independent 9-bit write masks; BWS0–BWS3 control D[8:0], D[17:9], D[26:18], D[35:27] respectively
C / C, CQ / CQ Output clock & echo clock pair C/C drive Q[35:0]; CQ/CQ are free-running echoes synchronized to C/C - used for source-synchronous capture at controller
K / K Input clock pair Rising edges sample D[35:0], A[17:0], RPS, WPS, BWS[3:0]; define all internal timing references
ZQ Impedance calibration input Connects to external resistor to ground to tune output driver impedance; cannot be left floating or tied to GND

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead and data contention - enables true concurrent read/write at full bandwidth
Two-word DDR burst Delivers 72 bits per clock cycle (36-bit × 2 words) on each port - doubles effective throughput vs. single-word devices
DOFF-configurable latency Selects between 1-cycle (QDR I mode) or 1.5-cycle (QDR II mode) read latency - balances timing closure and performance
Programmable output impedance ZQ pin calibrates Q[35:0], CQ, CQ to match PCB trace impedance - reduces signal integrity issues at 500 MT/s
JTAG 1149.1 test access Enables boundary scan testing, device identification, and debug visibility without additional test fixtures

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as line-rate buffer with zero bus turnaround delay between header reads and payload writes.

Use Value: Concurrent 512K × 36 access enables simultaneous 250 MHz packet header lookup and descriptor update - sustaining 3.6 Gbps aggregate throughput.

Use Scenario: Implementing distributed memory nodes in non-blocking switch fabrics with strict latency budgets.

IC Role / Device Role / Timing Role: Low-latency, deterministic memory node providing synchronized read/write access to crossbar scheduler logic.

Use Value: 1.5-cycle read latency (DOFF = HIGH) and echo clocks (CQ/CQ) allow controller to reliably capture data at 500 MT/s with ±50 ps skew tolerance.

Telecom Line Card Buffering Baseband Processing Memory

Use Scenario: Temporary storage of ATM cells or OTN frames in carrier-grade line cards before grooming or multiplexing.

IC Role / Device Role / Timing Role: Burst-access SRAM interfacing directly with SerDes PHYs and traffic management ASICs via HSTL buses.

Use Value: 1.4–1.8 V VDDQ compatibility allows direct connection to 1.5 V or 1.8 V PHY I/O domains without level shifters.

Use Scenario: Holding intermediate FFT/IFFT results and channel estimation data in LTE/5G baseband processors.

IC Role / Device Role / Timing Role: Pipelined memory co-located with DSP cores to minimize data movement latency in real-time signal chains.

Use Value: Synchronous self-timed writes ensure deterministic 250 MHz write completion - critical for meeting TDMA slot deadlines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3652 512K × 36, 200 MHz max, 1.8 V core, LVDS outputs (not HSTL), no ZQ calibration Requires LVDS termination and differential routing; lacks echo clocks and programmable drive Choose when system already uses LVDS signaling and lower bandwidth (3.2 Gbps) suffices
ISSI IS61WV102436B 1M × 36, 166 MHz, 3.3 V core/I/O, asynchronous interface, no DDR or burst capability Cannot support concurrent read/write; lacks echo clocks, PLL, or JTAG; requires external arbitration Choose only for cost-sensitive, non-real-time buffering where 1.6 Gbps peak bandwidth is acceptable

Compared with IDT72T3652 and IS61WV102436B, CY7C1314KV18 uniquely combines 250 MHz DDR operation, HSTL+ZQ impedance tuning, and CQ/CQ echo clocks - making it the only option supporting deterministic 3.6 Gbps line-rate packet buffering in 1.5 V/1.8 V systems.

Availability

CY7C1314KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1314KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1314KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and telecom infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1314KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This setting is sampled synchronously on the K clock and affects timing closure requirements for the memory controller.

Can CY7C1314KV18 operate with a single clock domain instead of differential clocks?

Yes - the device supports single-clock mode where K and K are tied together, and C and C are tied together. In this configuration, Q[35:0] and CQ/CQ are driven from the same clock source, simplifying board layout at the cost of reduced skew tolerance compared to differential C/C operation.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of Q[35:0], CQ, and CQ to approximately 48 Ω (0.2 × RQ). This matching minimizes reflections and improves eye diagram margins on 50 Ω PCB traces operating at 500 MT/s.

Is CY7C1314KV18 pin-compatible with earlier QDR I devices like CY7C1314V18?

No - CY7C1314KV18 uses a 165-ball FBGA package with different pin assignments (e.g., dedicated C/C and CQ/CQ pins, ZQ, and expanded BWS signals), whereas CY7C1314V18 uses a 119-ball package and lacks echo clocks and impedance calibration. Board redesign is required for migration.

CY7C1314KV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1314KV18-250BZI FAQ

1.How can I place an order for CY7C1314KV18-250BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1314KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1314KV18-250BZI reliable?

The price and inventory of CY7C1314KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314KV18-250BZI is usually 5 days.

3.What payment methods are accepted for CY7C1314KV18-250BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1314KV18-250BZI transactions.

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4.How is shipping managed for CY7C1314KV18-250BZI?

CY7C1314KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1314KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1314KV18-250BZI?

For technical support, including CY7C1314KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314KV18-250BZI requirements.

6.How does Aetrix verify that CY7C1314KV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1314KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314KV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1314KV18-250BZI?

All CY7C1314KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314KV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1314KV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1314KV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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