Infineon Technologies CY7C1314KV18-250BZI
- Part No.:
- CY7C1314KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1314KV18-250BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,220
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Product details
Overview
CY7C1314KV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 3.6 Gbps bandwidth via DDR interfaces on both ports, supports two-word burst transfers, and uses echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.
For engineers reviewing the CY7C1314KV18 datasheet, CY7C1314KV18 pinout, CY7C1314KV18 application, or CY7C1314KV18 equivalent, key selection criteria include its 165-ball FBGA package, DOFF-configurable 1- or 1.5-cycle read latency, synchronous self-timed writes, JTAG 1149.1 test access, and HSTL-compatible variable-drive outputs.
Technical Context
The CY7C1314KV18 implements QDR II architecture with fully independent read and write ports sharing a single 18-bit address bus (A[17:0]), enabling concurrent transactions without bus turnaround. Address latching occurs on alternate rising edges of K/K clocks, and all synchronous inputs are registered to K or K.
Read data is output-synchronized to C/C clocks with echo clocks CQ/CQ referenced to those outputs; write data is sampled on K/K rising edges. The device includes a PLL for precise data placement, programmable output impedance via ZQ, and four byte-write selects (BWS[3:0]) for granular 9-bit write control across its 36-bit data width.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18 Mbit total); dual 256K × 36 arrays enable depth expansion |
| Max Clock Frequency | 250 MHz (4 ns cycle time); supports 500 MT/s DDR data rate per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines timing margin for controller design |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; enables interoperability with 1.5 V or 1.8 V systems |
| Burst Length | Fixed two-word burst per access; delivers 72 bits (36 × 2) per clock cycle on read/write |
| Output Interface | HSTL Class I compatible with programmable drive strength; ZQ pin calibrates Q[35:0], CQ, CQ to 0.2×RQ |
| JTAG Support | IEEE 1149.1 compliant TAP controller with boundary scan, instruction register, and IDCODE support |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide bus sampled on K/K rising edges; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit DDR output driven on C/C rising edges; tristated when RPS inactive |
| A[17:0] | Multiplexed address input | 18-bit address shared by read/write ports; latched on alternating K/K edges for pipelined access |
| RPS / WPS | Active-low port select | Independent enables for read/write ports; deselecting disables port activity and tristates outputs/ignores inputs |
| BWS[3:0] | Byte write select | Four independent 9-bit write masks; BWS0–BWS3 control D[8:0], D[17:9], D[26:18], D[35:27] respectively |
| C / C, CQ / CQ | Output clock & echo clock pair | C/C drive Q[35:0]; CQ/CQ are free-running echoes synchronized to C/C - used for source-synchronous capture at controller |
| K / K | Input clock pair | Rising edges sample D[35:0], A[17:0], RPS, WPS, BWS[3:0]; define all internal timing references |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune output driver impedance; cannot be left floating or tied to GND |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates bus turnaround overhead and data contention - enables true concurrent read/write at full bandwidth |
| Two-word DDR burst | Delivers 72 bits per clock cycle (36-bit × 2 words) on each port - doubles effective throughput vs. single-word devices |
| DOFF-configurable latency | Selects between 1-cycle (QDR I mode) or 1.5-cycle (QDR II mode) read latency - balances timing closure and performance |
| Programmable output impedance | ZQ pin calibrates Q[35:0], CQ, CQ to match PCB trace impedance - reduces signal integrity issues at 500 MT/s |
| JTAG 1149.1 test access | Enables boundary scan testing, device identification, and debug visibility without additional test fixtures |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM serving as line-rate buffer with zero bus turnaround delay between header reads and payload writes. Use Value: Concurrent 512K × 36 access enables simultaneous 250 MHz packet header lookup and descriptor update - sustaining 3.6 Gbps aggregate throughput. |
Use Scenario: Implementing distributed memory nodes in non-blocking switch fabrics with strict latency budgets. IC Role / Device Role / Timing Role: Low-latency, deterministic memory node providing synchronized read/write access to crossbar scheduler logic. Use Value: 1.5-cycle read latency (DOFF = HIGH) and echo clocks (CQ/CQ) allow controller to reliably capture data at 500 MT/s with ±50 ps skew tolerance. |
| Telecom Line Card Buffering | Baseband Processing Memory |
|
Use Scenario: Temporary storage of ATM cells or OTN frames in carrier-grade line cards before grooming or multiplexing. IC Role / Device Role / Timing Role: Burst-access SRAM interfacing directly with SerDes PHYs and traffic management ASICs via HSTL buses. Use Value: 1.4–1.8 V VDDQ compatibility allows direct connection to 1.5 V or 1.8 V PHY I/O domains without level shifters. |
Use Scenario: Holding intermediate FFT/IFFT results and channel estimation data in LTE/5G baseband processors. IC Role / Device Role / Timing Role: Pipelined memory co-located with DSP cores to minimize data movement latency in real-time signal chains. Use Value: Synchronous self-timed writes ensure deterministic 250 MHz write completion - critical for meeting TDMA slot deadlines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3652 | 512K × 36, 200 MHz max, 1.8 V core, LVDS outputs (not HSTL), no ZQ calibration | Requires LVDS termination and differential routing; lacks echo clocks and programmable drive | Choose when system already uses LVDS signaling and lower bandwidth (3.2 Gbps) suffices |
| ISSI IS61WV102436B | 1M × 36, 166 MHz, 3.3 V core/I/O, asynchronous interface, no DDR or burst capability | Cannot support concurrent read/write; lacks echo clocks, PLL, or JTAG; requires external arbitration | Choose only for cost-sensitive, non-real-time buffering where 1.6 Gbps peak bandwidth is acceptable |
Compared with IDT72T3652 and IS61WV102436B, CY7C1314KV18 uniquely combines 250 MHz DDR operation, HSTL+ZQ impedance tuning, and CQ/CQ echo clocks - making it the only option supporting deterministic 3.6 Gbps line-rate packet buffering in 1.5 V/1.8 V systems.
Availability
CY7C1314KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C1314KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C1314KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and telecom infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C1314KV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This setting is sampled synchronously on the K clock and affects timing closure requirements for the memory controller.
Can CY7C1314KV18 operate with a single clock domain instead of differential clocks?
Yes - the device supports single-clock mode where K and K are tied together, and C and C are tied together. In this configuration, Q[35:0] and CQ/CQ are driven from the same clock source, simplifying board layout at the cost of reduced skew tolerance compared to differential C/C operation.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of Q[35:0], CQ, and CQ to approximately 48 Ω (0.2 × RQ). This matching minimizes reflections and improves eye diagram margins on 50 Ω PCB traces operating at 500 MT/s.
Is CY7C1314KV18 pin-compatible with earlier QDR I devices like CY7C1314V18?
No - CY7C1314KV18 uses a 165-ball FBGA package with different pin assignments (e.g., dedicated C/C and CQ/CQ pins, ZQ, and expanded BWS signals), whereas CY7C1314V18 uses a 119-ball package and lacks echo clocks and impedance calibration. Board redesign is required for migration.
CY7C1314KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1314KV18-250BZI FAQ
1.How can I place an order for CY7C1314KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1314KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1314KV18-250BZI reliable?
The price and inventory of CY7C1314KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314KV18-250BZI is usually 5 days.
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Once your CY7C1314KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1314KV18-250BZI?
For technical support, including CY7C1314KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1314KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1314KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1314KV18-250BZI?
All CY7C1314KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1314KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1314KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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