Infineon Technologies CY7C1314KV18-250BZXC

Overview

CY7C1314KV18-250BZXC from Cypress Semiconductor is a 512K × 36, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 1.8 Gbps bandwidth via DDR interfaces on both ports, supports two-word burst transfers, and uses echo clocks (CQ/CQ) for timing-critical data capture in high-speed networking systems.

For engineers reviewing the CY7C1314KV18-250BZXC datasheet, CY7C1314KV18-250BZXC pinout, CY7C1314KV18-250BZXC application, or CY7C1314KV18-250BZXC equivalent, key selection criteria include its 512K × 36 configuration, dual-clock DDR timing (K/K and C/C), DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with HSTL-18 I/O standards.

Technical Context

The device implements a true QDR II architecture with physically independent read and write data paths-no bus turnaround required. All synchronous inputs are registered on rising edges of K/K clocks; outputs are edge-aligned to C/C clocks, with CQ/CQ echo clocks synchronized to output timing for controller-side deskew.

It features on-chip PLL for precise data placement, JTAG 1149.1 boundary scan support, programmable output impedance via ZQ pin, and byte-write select (BWS[3:0]) enabling partial 36-bit word updates without read-modify-write cycles. Depth expansion is supported via RPS/WPS controls.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C1314KV18-250BZXC delivers 3.6× higher bandwidth, deterministic burst timing, and integrated echo clocking-making it uniquely suitable for 250 MHz+ packet-processing pipelines requiring zero-bus-turnaround concurrency.

Availability

CY7C1314KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and ATE pattern memory applications requiring stable component supply across multi-year production cycles.

Supply support for CY7C1314KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with focus on signal integrity and system-level timing robustness.

CY7C1314KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in high-speed packet infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1314KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW, it reverts to QDR I mode with 1-cycle latency. This setting directly impacts controller pipeline depth and must be fixed at power-up-no runtime switching is supported.

Can CY7C1314KV18-250BZXC operate with only a single clock domain?

Yes-it supports single-clock mode where K and C are tied together (and K and C likewise), simplifying clock distribution. In this mode, Q[35:0] and CQ/CQ are driven from K/K edges instead of C/C, retaining full functionality but forfeiting independent read-data deskew capability.

How does the ZQ pin affect signal integrity in high-speed layouts?

ZQ connects to an external resistor to ground (typically 240 Ω) to calibrate internal output drivers, setting Q[35:0], CQ, and CQ impedance to 0.2 × RQ (e.g., ~48 Ω). This matches common PCB trace impedances, reducing reflections and improving eye diagram margins at 666 Mbps DDR rates.

Is JTAG boundary scan supported on CY7C1314KV18-250BZXC, and what pins are required?

Yes-IEEE 1149.1 JTAG is fully implemented using TDI, TDO, TCK, and TMS pins (ball positions R13, R12, R11, and R10 on the 165-ball FBGA). No external pull-ups or configuration strapping is needed; the TAP controller is active after power-up and ready for scan operations without initialization sequence.