Infineon Technologies CY7C1314KV18-250BZXCT
- Part No.:
- CY7C1314KV18-250BZXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1314KV18-250BZXCT.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1314KV18-250BZXCT from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz maximum clock frequency (40 ns cycle time), 1.8 V core supply (VDD = 1.8 V ±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It delivers concurrent burst reads/writes at 500 MT/s per port using DDR interfaces and supports depth expansion via RPS/WPS and BWS[3:0]. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1314KV18-250BZXCT datasheet, CY7C1314KV18-250BZXCT pinout, CY7C1314KV18-250BZXCT application, or CY7C1314KV18-250BZXCT equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted data capture, programmable output impedance via ZQ, and DOFF-configurable 1-cycle (QDR I) vs. 1.5-cycle (QDR II) read latency.
Technical Context
The device implements true dual-port synchronous architecture: independent K/K clocks latch write addresses and data, while C/C clocks drive read outputs with echo clocks CQ/CQ aligned to output timing. All accesses are rising-edge–triggered; no bus turnaround is required due to physically separated D[35:0] inputs and Q[35:0] outputs.
It uses on-chip PLL for precise data placement, supports JTAG 1149.1 boundary scan, and enables byte-selective writes via four active-low BWS signals-BWS0–BWS3 each controlling nine bits of the 36-bit data bus. Internal organization is two 256K × 36 arrays, accessed via 18-bit multiplexed address bus (A[17:0]).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 250 MHz - defines 4 ns minimum clock period and 500 MT/s effective throughput per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth in switch fabric controllers |
| Core Supply Voltage | VDD = 1.8 V ±0.1 V - requires tight-regulation LDO; not compatible with 2.5 V or 3.3 V core rails |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V memory controllers |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-pin-count SRAMs in telecom modules |
| Burst Length | Two-word burst - delivers 72 bits per access (36-bit × 2) on both read and write ports |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 1.4 mm height, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXCT suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data input bus | 36-bit synchronous input sampled on rising edges of K/K; full-width interface for burst write transfers |
| Q[35:0] | Read data output bus | 36-bit synchronous output driven on rising edges of C/C; tristated when RPS is deasserted |
| RPS | Read port select | Active-low signal enabling read operations; controls output driver enable and internal read arbitration |
| WPS | Write port select | Active-low signal enabling write operations; gates write data and address latching on K clock |
| BWS[3:0] | Byte write select | Four independent active-low signals, each enabling 9-bit byte write (D[8:0], D[17:9], D[26:18], D[35:27]) |
| A[17:0] | Multiplexed address bus | 18-bit address shared by read/write ports; latched on alternating K/K edges for pipelined access |
| K, K | Write/read clock inputs | Differential pair for all synchronous inputs; rising edges control address/data capture and internal timing |
| C, C | Output data clocks | Differential pair driving Q[35:0]; used with CQ/CQ for source-synchronous capture at controller |
| CQ, CQ | Echo clocks | Free-running copies of C/C, phase-aligned to output data edges-enables deterministic setup/hold at receiver |
| ZQ | Impedance calibration input | Connect to external resistor to ground (RQ) to tune Q[35:0]/CQ/CQ output impedance to 0.2×RQ |
| DOFF | Read latency mode control | High = QDR II mode (1.5-cycle latency); Low = QDR I mode (1-cycle latency); sets internal pipeline depth |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead and contention-enables back-to-back read+write in same cycle |
| DDR interfaces on both ports | Doubles effective bandwidth without increasing clock frequency-500 MT/s sustained on 250 MHz clock |
| Echo clocks CQ/CQ | Provides trace-length–independent data capture timing-removes need for complex PCB length matching |
| Programmable output impedance (ZQ) | Enables dynamic impedance tuning to match PCB trace Z₀ (typically 50 Ω), reducing signal reflections |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant structural testing and interconnect verification in dense routing environments |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency buffer between ingress parser and egress scheduler; RPS/WPS enable simultaneous header read + payload write. Use Value: Concurrent access eliminates serialization delay-critical for sub-100 ns forwarding decisions in 10G+ switching fabrics. |
Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards where deterministic burst transfer is mandatory. IC Role / Device Role / Timing Role: High-throughput memory for ATM cell or GFP frame assembly/disassembly engines; CQ/CQ aligns data to FPGA SerDes capture windows. Use Value: Echo-clock synchronization reduces timing margin requirements by >150 ps-improves timing closure in 250 MHz designs. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of IQ samples between digital down-converter (DDC) and FFT processing blocks in 4G/5G radio units. IC Role / Device Role / Timing Role: Burst-access cache feeding parallel FFT engines; DOFF pin selects 1-cycle latency for tighter loop timing in real-time PHY layers. Use Value: Configurable latency allows trade-off between pipeline depth and jitter tolerance-supports both low-latency and high-throughput modes. |
Use Scenario: Storing stimulus/response patterns in high-speed ATE systems requiring repeatable, glitch-free vector playback. IC Role / Device Role / Timing Role: Deterministic memory for pattern sequencers; ZQ calibration ensures consistent edge rates across 36-bit wide data buses. Use Value: Programmable impedance minimizes bit-to-bit skew on wide buses-enables reliable 500 MT/s pattern streaming without per-bit deskew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 10 ns access time, 165-ball FBGA, 3.3 V VDDQ only, no ZQ calibration, no echo clocks | Lacks CQ/CQ and impedance tuning-requires tighter PCB layout control and higher VDDQ margin | Select if legacy 3.3 V system compatibility is required and echo-clock simplification is not needed. |
| ISSI IS61WV102436BLL-15BLI | 15 ns access, 165-ball FBGA, 1.8 V core/VDDQ, no JTAG, no DOFF latency selection | Fixed 1-cycle latency only; no boundary scan or programmable impedance-reduced testability and layout flexibility | Choose for cost-sensitive applications where JTAG and latency configurability are non-critical. |
Compared with IDT72T3615L10BG and IS61WV102436BLL-15BLI, CY7C1314KV18-250BZXCT uniquely combines echo-clock–assisted timing closure, ZQ-based impedance tuning, and DOFF-selectable latency-making it optimal for new 250 MHz+ designs demanding signal integrity and design margin.
Availability
CY7C1314KV18-250BZXCT is available at Aetrix Electronics and suitable for network switching, telecom line card development, baseband processing, and automated test equipment requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1314KV18-250BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.
CY7C1314KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-throughput, low-latency packet buffering and burst-oriented memory subsystems in carrier-grade infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1314KV18-250BZXCT?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in QDR II mode with 1.5-cycle read latency; when LOW (or tied to VSS), it reverts to QDR I mode with 1-cycle latency. This setting directly affects internal pipeline staging and must be fixed at power-up-it is not dynamically switchable during operation.
How does the ZQ pin enable output impedance calibration?
The ZQ pin connects to an external precision resistor (RQ) to ground, typically 50 Ω. The device measures this resistance and adjusts its output drivers (Q[35:0], CQ, CQ) to achieve 0.2 × RQ output impedance-e.g., 10 Ω for 50 Ω RQ. This compensates for process/voltage/temperature variation and matches PCB trace impedance without requiring external termination resistors.
Can CY7C1314KV18-250BZXCT operate with only a single clock domain?
Yes-the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating the need for separate clock nets. In this mode, Q[35:0] data is driven on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. However, echo-clock benefits and skew mitigation are lost, and timing margins tighten accordingly.
What is the purpose of BWS[3:0] signals in write operations?
BWS[3:0] are active-low byte write select signals that gate individual 9-bit segments of the 36-bit D[35:0] bus. When a BWS bit is deasserted (HIGH), the corresponding 9-bit byte is ignored during the write cycle, preserving existing memory contents in those bits. This enables partial-word updates without read-modify-write sequences-critical for metadata field manipulation in packet buffers.
CY7C1314KV18-250BZXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1314KV18-250BZXCT FAQ
1.How can I place an order for CY7C1314KV18-250BZXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1314KV18-250BZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1314KV18-250BZXCT reliable?
The price and inventory of CY7C1314KV18-250BZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314KV18-250BZXCT is usually 5 days.
3.What payment methods are accepted for CY7C1314KV18-250BZXCT?
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CY7C1314KV18-250BZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1314KV18-250BZXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1314KV18-250BZXCT?
For technical support, including CY7C1314KV18-250BZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314KV18-250BZXCT requirements.
6.How does Aetrix verify that CY7C1314KV18-250BZXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1314KV18-250BZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314KV18-250BZXCT meets industry standards.
7.What is the process for return or replacement of CY7C1314KV18-250BZXCT?
All CY7C1314KV18-250BZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314KV18-250BZXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1314KV18-250BZXCT part is unused and in its original packaging.
Return procedure for CY7C1314KV18-250BZXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1314KV18-250BZXCT Tags

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M24C02-WMN6TP
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