Infineon Technologies CY7C1314KV18-300BZXC

Overview

CY7C1314KV18-300BZXC from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent burst reads/writes with 1.5-cycle read latency (DOFF = HIGH) and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1314KV18-300BZXC datasheet, CY7C1314KV18-300BZXC pinout, CY7C1314KV18-300BZXC application, or CY7C1314KV18-300BZXC equivalent, key selection criteria include dual-clock DDR timing, echo clock (CQ/CQ) support for source-synchronous capture, HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent read and write pipelines with dedicated address latching on alternating K/K edges, enabling true concurrent access without bus turnaround. Its two-word burst architecture transfers 72 bits per cycle (36-bit × 2) on both ports, synchronized to rising edges of K/K (write) and C/C (read).

The device integrates an internal PLL for precise data placement, echo clocks (CQ/CQ) referenced to C/C for deskewed data capture, and programmable output impedance via ZQ pin tied to external resistor or VDDQ. DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, matching QDR I behavior when needed.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3652L5PF and IS61WV102436B, CY7C1314KV18-300BZXC provides superior bandwidth (600 Mbps vs ≤500 Mbps), lower power (1.8 V core), and built-in timing aids (CQ/CQ, ZQ), making it optimal for next-generation telecom and video infrastructure requiring deterministic low-latency memory access.

Availability

CY7C1314KV18-300BZXC is available at Aetrix Electronics and suitable for 10G Ethernet switching, optical transport line cards, LTE baseband processing, and broadcast video encoding requiring stable component supply, long-lifecycle support, and guaranteed FBGA-165 sourcing.

Supply support for CY7C1314KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1314KV18 belongs to the QDR® II SRAM product line, engineered specifically for full-duplex, high-throughput buffering in network processors, packet switches, and baseband ICs where deterministic latency and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1314KV18-300BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in standard QDR II mode with 1.5-cycle read latency; when LOW, it reverts to QDR I timing with 1-cycle latency. This allows backward compatibility with existing QDR I controllers while retaining QDR II burst and dual-port advantages.

How does the ZQ pin affect output drive strength?

The ZQ pin sets output impedance for Q[35:0], CQ, and CQ signals. When connected to a resistor RQ to ground, outputs are calibrated to 0.2 × RQ (e.g., 50 Ω trace → 10 Ω driver). Connecting ZQ directly to VDDQ enables minimum impedance mode (~7 Ω), useful for short-trace, low-skew layouts. ZQ must never be left floating or tied to GND.

Can CY7C1314KV18-300BZXC operate with only one clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), eliminating need for separate clock pairs. In this configuration, data is clocked by K/K for both read and write, and echo clocks CQ/CQ derive from K/K. Timing margins tighten, but system clock tree simplification is achieved.

What is the purpose of BWS[3:0] signals in write operations?

BWS[3:0] are active-low byte write enables that allow selective updating of 9-bit segments within the 36-bit word. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Deasserting any BWS prevents corresponding byte from being written, preserving prior data without requiring read-modify-write cycles.