Infineon Technologies CY7C1315BV18-167BZC

Overview

CY7C1315BV18 from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports, DDR interfaces on both ports, and 4-word burst transfers-enabling high-bandwidth buffering in packet-forwarding engines and network line cards.

For engineers reviewing the CY7C1315BV18 datasheet, CY7C1315BV18 pinout, CY7C1315BV18 application, or CY7C1315BV18 equivalent, key selection criteria include its 36-bit wide synchronous interface, echo clock support (CQ/CQ) for timing margin recovery, JTAG 1149.1 test access, and 165-ball FBGA package with impedance-matching ZQ pin.

Technical Context

The device uses QDR-II architecture with fully independent read and write ports sharing a multiplexed address bus. Read and write operations are initiated on rising edges of K/K clocks, while output data is synchronized to C/C clocks-enabling precise DDR timing without bus turnaround.

Each access delivers four sequential 36-bit words at 600 MT/s effective data rate (300 MHz clock × 2 transitions). Internal DLL ensures accurate data placement, and variable-drive HSTL outputs support impedance-controlled routing in high-speed backplanes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C1315BV18-200BZC, this -167BZC variant trades peak speed for relaxed timing margins and lower power; versus AS7C331024B-167BIN, it delivers true concurrent access and source-synchronous timing-critical for deterministic real-time buffering.

Availability

CY7C1315BV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card design, high-speed test equipment development, and real-time video frame storage requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1315BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write and precise timing control are mandatory.

FAQ

What is the minimum VDDQ voltage supported for CY7C1315BV18?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed per datasheet specifications; 1.4 V enables compatibility with HSTL Class I receivers while maintaining sufficient noise margin at 167 MHz.

Can CY7C1315BV18 operate in single-clock mode?

Yes. When only K is driven and C/C are tied to K/K respectively, the device operates in single-clock mode. In this configuration, Q[35:0] outputs are timed to K/K edges, and CQ/CQ become echoes of K/K instead of C/C.

How does the ZQ pin affect output driver impedance?

ZQ connects to an external 240 Ω resistor to ground, enabling internal circuitry to calibrate output drivers to approximately 50 Ω. This matches standard PCB trace impedance and minimizes reflections on 36-bit data buses running at 600 MT/s.

Is JTAG boundary-scan functional during normal SRAM operation?

Yes. The IEEE 1149.1 TAP controller operates independently of memory functions. TCK/TMS/TDI/TDO pins remain active and controllable even while read/write ports are active, enabling in-system test without halting data flow.