Infineon Technologies CY7C1315BV18-167BZCT
- Part No.:
- CY7C1315BV18-167BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1315BV18-167BZCT.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1315BV18-167BZCT from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It features separate read/write ports, DDR interfaces on both ports (300 MHz clock → 600 Mbps data rate), and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers.
For engineers reviewing the CY7C1315BV18-167BZCT datasheet, CY7C1315BV18-167BZCT pinout, CY7C1315BV18-167BZCT application, or CY7C1315BV18-167BZCT equivalent, key selection criteria include burst depth (4-word), byte write select support (BWS[3:0]), FBGA-165 package compatibility, and DLL-assisted timing alignment for deterministic setup/hold margins at 300 MHz system clocks.
Technical Context
The device implements a synchronous pipelined QDR-II architecture with independent read and write data paths-eliminating bus turnaround and enabling concurrent access. Address latching occurs on alternating rising edges of K/K clocks, while read data is output-synchronized to C/C clocks with echo clocks (CQ/CQ) referenced to C for PCB flight-time compensation.
All inputs (RPS, WPS, BWS[3:0], A[16:0], D[35:0]) are registered on K/K rising edges; all outputs (Q[35:0], CQ, CQ) are registered on C/C rising edges. Internal self-timed writes ensure consistent write latency, and the Delay Lock Loop (DLL) aligns internal timing to minimize jitter-induced skew across the 36-bit data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 167 MHz (supports 300 MHz K/K input with 600 Mbps DDR throughput) |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines minimum logic threshold and power delivery stability for internal SRAM array |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - enables HSTL-compatible signaling with adjustable drive strength |
| Burst Length | 4-word sequential burst - reduces address bus toggling and simplifies controller address generation |
| Write Select Granularity | Four independent byte write selects (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write cycles |
| Output Timing Reference | C/C differential clock pair - provides deskewed output timing for multi-device parallel interfaces |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant lead-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edge of K/K; supports full 36-bit parallel writes per cycle |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of C/C; tri-stated when RPS is deasserted |
| A[16:0] | Multiplexed address bus | Shared by read/write ports; 17 bits sufficient for 512K depth addressing |
| RPS | Read port select (active LOW) | Initiates 4-word burst read; output drivers auto-tri-state after final C edge |
| WPS | Write port select (active LOW) | Enables write operation; D[35:0] ignored when deasserted |
| BWS[3:0] | Byte write select (active LOW) | Each controls one 9-bit byte (D[8:0], D[17:9], D[26:18], D[35:27]) for partial writes |
| C / C | Output data clocks | Differential pair controlling Q[35:0] and CQ/CQ timing; used for flight-time deskew |
| K / K | Input clocks | Differential pair sampling all synchronous inputs (RPS, WPS, A, D, BWS); only rising edges used |
| CQ / CQ | Echo clocks | Free-running copies of C/C synchronized to output timing domain; simplify receiver capture |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune Q/CQ output driver impedance to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay and contention, enabling true concurrent access in packet buffering applications |
| Double Data Rate (DDR) interface | Delivers 600 Mbps effective bandwidth per port using 300 MHz clock - doubles throughput vs. single-data-rate SRAM |
| Delay Lock Loop (DLL) | Aligns internal data launch timing to C/C clock edges, reducing jitter sensitivity and enabling stable 167 MHz operation |
| Variable-drive HSTL outputs | Configurable drive strength via ZQ calibration ensures signal integrity on high-speed 36-bit buses with controlled impedance routing |
| JTAG 1149.1 test access | Enables boundary-scan testing and in-system diagnostics without additional test fixtures or probe points |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer memory with independent read/write arbitration for cut-through switching. Use Value: 4-word burst + DDR interface delivers 600 Mbps sustained bandwidth per port, matching 10 Gbps serial link aggregate rates without bottleneck. | Use Scenario: Interfacing with multi-lane SerDes controllers in modular chassis-based switches requiring low-latency memory access. IC Role / Device Role / Timing Role: High-bandwidth memory node in distributed fabric architecture, synchronized to centralized clock domain via C/C and CQ/CQ. Use Value: Echo clocks (CQ/CQ) enable precise source-synchronous capture across 36-bit wide data paths, eliminating inter-lane skew in multi-device configurations. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
Use Scenario: Storing channelized frame buffers in 4G/LTE baseband units where real-time FFT and filtering require deterministic latency. IC Role / Device Role / Timing Role: Dedicated SRAM for time-critical DMA transfers between DSP cores and RF front-end interfaces. Use Value: Self-timed writes and DLL-aligned outputs guarantee sub-5 ns write-to-read turnaround, meeting strict TD-LTE TDD slot timing constraints. | Use Scenario: Generating high-fidelity stimulus patterns in automated test equipment (ATE) for ASIC validation at >200 MHz clock rates. IC Role / Device Role / Timing Role: Pattern storage element feeding parallel digital I/O channels with synchronized multi-bit output. Use Value: Byte write select (BWS[3:0]) allows dynamic pattern patching without full memory reload, reducing test vector update latency by >90%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315BV18-200BZCT | Higher max frequency (200 MHz) and current draw (450 mA); identical pinout and functionality | Required for systems needing >167 MHz sustained clock rate with same 512K×36 density | Select when system clock margin demands headroom beyond 167 MHz, accepting higher power and tighter layout constraints |
| AS7C331024B-167BIN | Single-port SSRAM (not QDR-II); 1M×32 organization; no echo clocks or DDR interface | Only suitable for non-concurrent read/write use cases; lacks burst and dual-port advantages | Consider only if cost sensitivity outweighs bandwidth and concurrency requirements, and controller supports turn-around protocol |
Compared with CY7C1315BV18-200BZCT, this part trades 33 MHz clock headroom for lower power and relaxed timing closure; versus AS7C331024B-167BIN, it delivers true concurrent access and deterministic DDR timing-but requires more complex clock routing and controller logic.
Availability
CY7C1315BV18-167BZCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern memory applications requiring stable component supply and long-term industrial availability.
Supply support for CY7C1315BV18-167BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems, with emphasis on signal integrity and timing precision.
This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking infrastructure and high-speed test equipment.
FAQ
What is the function of the ZQ pin on CY7C1315BV18-167BZCT?
The ZQ pin is an output impedance calibration input. When connected to a precision resistor (RQ) tied to ground, it tunes the output driver impedance of Q[35:0], CQ, and CQ to 0.2×RQ. This ensures matched termination to the PCB trace impedance, minimizing reflections and improving signal integrity on high-speed 36-bit buses. Direct connection to VDDQ enables minimum-impedance mode.
Does CY7C1315BV18-167BZCT support single-clock-domain operation?
Yes. The device supports single-clock-domain operation where K and C are driven by the same clock source, and K and C are tied together. In this mode, all input registration uses K/K, and all output registration uses K/K as the timing reference. The DLL remains active to maintain internal timing alignment, and echo clocks (CQ/CQ) derive from K instead of C.
How many address bits are required for CY7C1315BV18-167BZCT's 512K × 36 organization?
17 address bits (A[16:0]) are required. Internally organized as four 128K × 36 arrays, the device uses multiplexed addressing: the same 17-bit bus serves both read and write ports, with port selection (RPS/WPS) and clock edge (K/K alternation) determining access destination. No external address demultiplexing is needed.
Can BWS[3:0] be used to write individual 9-bit nibbles within a 36-bit word?
No. BWS[3:0] are byte write selects, each controlling a distinct 9-bit segment: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. They do not support finer-grained (e.g., 4-bit) nibble writes. Deasserting any BWS line causes its corresponding 9-bit segment to retain prior content during the write cycle.
CY7C1315BV18-167BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1315BV18-167BZCT FAQ
1.How can I place an order for CY7C1315BV18-167BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1315BV18-167BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1315BV18-167BZCT reliable?
The price and inventory of CY7C1315BV18-167BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315BV18-167BZCT is usually 5 days.
3.What payment methods are accepted for CY7C1315BV18-167BZCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315BV18-167BZCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1315BV18-167BZCT?
CY7C1315BV18-167BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1315BV18-167BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1315BV18-167BZCT?
For technical support, including CY7C1315BV18-167BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315BV18-167BZCT requirements.
6.How does Aetrix verify that CY7C1315BV18-167BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1315BV18-167BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315BV18-167BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1315BV18-167BZCT?
All CY7C1315BV18-167BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315BV18-167BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1315BV18-167BZCT part is unused and in its original packaging.
Return procedure for CY7C1315BV18-167BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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