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Infineon Technologies CY7C1315BV18-167BZCT

Part No.:
CY7C1315BV18-167BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315BV18-167BZCT.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,763

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Product details

Overview

CY7C1315BV18-167BZCT from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It features separate read/write ports, DDR interfaces on both ports (300 MHz clock → 600 Mbps data rate), and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers.

For engineers reviewing the CY7C1315BV18-167BZCT datasheet, CY7C1315BV18-167BZCT pinout, CY7C1315BV18-167BZCT application, or CY7C1315BV18-167BZCT equivalent, key selection criteria include burst depth (4-word), byte write select support (BWS[3:0]), FBGA-165 package compatibility, and DLL-assisted timing alignment for deterministic setup/hold margins at 300 MHz system clocks.

Technical Context

The device implements a synchronous pipelined QDR-II architecture with independent read and write data paths-eliminating bus turnaround and enabling concurrent access. Address latching occurs on alternating rising edges of K/K clocks, while read data is output-synchronized to C/C clocks with echo clocks (CQ/CQ) referenced to C for PCB flight-time compensation.

All inputs (RPS, WPS, BWS[3:0], A[16:0], D[35:0]) are registered on K/K rising edges; all outputs (Q[35:0], CQ, CQ) are registered on C/C rising edges. Internal self-timed writes ensure consistent write latency, and the Delay Lock Loop (DLL) aligns internal timing to minimize jitter-induced skew across the 36-bit data bus.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 configuration)
Max Clock Frequency167 MHz (supports 300 MHz K/K input with 600 Mbps DDR throughput)
Core Supply Voltage1.8 V ± 0.1 V - defines minimum logic threshold and power delivery stability for internal SRAM array
I/O Supply RangeVDDQ = 1.4 V to 1.8 V - enables HSTL-compatible signaling with adjustable drive strength
Burst Length4-word sequential burst - reduces address bus toggling and simplifies controller address generation
Write Select GranularityFour independent byte write selects (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write cycles
Output Timing ReferenceC/C differential clock pair - provides deskewed output timing for multi-device parallel interfaces

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant lead-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edge of K/K; supports full 36-bit parallel writes per cycle
Q[35:0]Synchronous read data outputsDriven on rising edges of C/C; tri-stated when RPS is deasserted
A[16:0]Multiplexed address busShared by read/write ports; 17 bits sufficient for 512K depth addressing
RPSRead port select (active LOW)Initiates 4-word burst read; output drivers auto-tri-state after final C edge
WPSWrite port select (active LOW)Enables write operation; D[35:0] ignored when deasserted
BWS[3:0]Byte write select (active LOW)Each controls one 9-bit byte (D[8:0], D[17:9], D[26:18], D[35:27]) for partial writes
C / COutput data clocksDifferential pair controlling Q[35:0] and CQ/CQ timing; used for flight-time deskew
K / KInput clocksDifferential pair sampling all synchronous inputs (RPS, WPS, A, D, BWS); only rising edges used
CQ / CQEcho clocksFree-running copies of C/C synchronized to output timing domain; simplify receiver capture
ZQImpedance calibration inputConnects to external resistor to ground to tune Q/CQ output driver impedance to 0.2×RQ

Key Features

FeatureDesign Value
Separate read/write data pathsEliminates bus turnaround delay and contention, enabling true concurrent access in packet buffering applications
Double Data Rate (DDR) interfaceDelivers 600 Mbps effective bandwidth per port using 300 MHz clock - doubles throughput vs. single-data-rate SRAM
Delay Lock Loop (DLL)Aligns internal data launch timing to C/C clock edges, reducing jitter sensitivity and enabling stable 167 MHz operation
Variable-drive HSTL outputsConfigurable drive strength via ZQ calibration ensures signal integrity on high-speed 36-bit buses with controlled impedance routing
JTAG 1149.1 test accessEnables boundary-scan testing and in-system diagnostics without additional test fixtures or probe points

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer memory with independent read/write arbitration for cut-through switching.

Use Value: 4-word burst + DDR interface delivers 600 Mbps sustained bandwidth per port, matching 10 Gbps serial link aggregate rates without bottleneck.

Use Scenario: Interfacing with multi-lane SerDes controllers in modular chassis-based switches requiring low-latency memory access.

IC Role / Device Role / Timing Role: High-bandwidth memory node in distributed fabric architecture, synchronized to centralized clock domain via C/C and CQ/CQ.

Use Value: Echo clocks (CQ/CQ) enable precise source-synchronous capture across 36-bit wide data paths, eliminating inter-lane skew in multi-device configurations.

Telecom Baseband ProcessingTest Equipment Pattern Memory

Use Scenario: Storing channelized frame buffers in 4G/LTE baseband units where real-time FFT and filtering require deterministic latency.

IC Role / Device Role / Timing Role: Dedicated SRAM for time-critical DMA transfers between DSP cores and RF front-end interfaces.

Use Value: Self-timed writes and DLL-aligned outputs guarantee sub-5 ns write-to-read turnaround, meeting strict TD-LTE TDD slot timing constraints.

Use Scenario: Generating high-fidelity stimulus patterns in automated test equipment (ATE) for ASIC validation at >200 MHz clock rates.

IC Role / Device Role / Timing Role: Pattern storage element feeding parallel digital I/O channels with synchronized multi-bit output.

Use Value: Byte write select (BWS[3:0]) allows dynamic pattern patching without full memory reload, reducing test vector update latency by >90%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315BV18-200BZCTHigher max frequency (200 MHz) and current draw (450 mA); identical pinout and functionalityRequired for systems needing >167 MHz sustained clock rate with same 512K×36 densitySelect when system clock margin demands headroom beyond 167 MHz, accepting higher power and tighter layout constraints
AS7C331024B-167BINSingle-port SSRAM (not QDR-II); 1M×32 organization; no echo clocks or DDR interfaceOnly suitable for non-concurrent read/write use cases; lacks burst and dual-port advantagesConsider only if cost sensitivity outweighs bandwidth and concurrency requirements, and controller supports turn-around protocol

Compared with CY7C1315BV18-200BZCT, this part trades 33 MHz clock headroom for lower power and relaxed timing closure; versus AS7C331024B-167BIN, it delivers true concurrent access and deterministic DDR timing-but requires more complex clock routing and controller logic.

Availability

CY7C1315BV18-167BZCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern memory applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1315BV18-167BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems, with emphasis on signal integrity and timing precision.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking infrastructure and high-speed test equipment.

FAQ

What is the function of the ZQ pin on CY7C1315BV18-167BZCT?

The ZQ pin is an output impedance calibration input. When connected to a precision resistor (RQ) tied to ground, it tunes the output driver impedance of Q[35:0], CQ, and CQ to 0.2×RQ. This ensures matched termination to the PCB trace impedance, minimizing reflections and improving signal integrity on high-speed 36-bit buses. Direct connection to VDDQ enables minimum-impedance mode.

Does CY7C1315BV18-167BZCT support single-clock-domain operation?

Yes. The device supports single-clock-domain operation where K and C are driven by the same clock source, and K and C are tied together. In this mode, all input registration uses K/K, and all output registration uses K/K as the timing reference. The DLL remains active to maintain internal timing alignment, and echo clocks (CQ/CQ) derive from K instead of C.

How many address bits are required for CY7C1315BV18-167BZCT's 512K × 36 organization?

17 address bits (A[16:0]) are required. Internally organized as four 128K × 36 arrays, the device uses multiplexed addressing: the same 17-bit bus serves both read and write ports, with port selection (RPS/WPS) and clock edge (K/K alternation) determining access destination. No external address demultiplexing is needed.

Can BWS[3:0] be used to write individual 9-bit nibbles within a 36-bit word?

No. BWS[3:0] are byte write selects, each controlling a distinct 9-bit segment: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. They do not support finer-grained (e.g., 4-bit) nibble writes. Deasserting any BWS line causes its corresponding 9-bit segment to retain prior content during the write cycle.

CY7C1315BV18-167BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315BV18-167BZCT FAQ

1.How can I place an order for CY7C1315BV18-167BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1315BV18-167BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315BV18-167BZCT reliable?

The price and inventory of CY7C1315BV18-167BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315BV18-167BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1315BV18-167BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315BV18-167BZCT transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C1315BV18-167BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315BV18-167BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315BV18-167BZCT?

For technical support, including CY7C1315BV18-167BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315BV18-167BZCT requirements.

6.How does Aetrix verify that CY7C1315BV18-167BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1315BV18-167BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315BV18-167BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1315BV18-167BZCT?

All CY7C1315BV18-167BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315BV18-167BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315BV18-167BZCT part is unused and in its original packaging.

Return procedure for CY7C1315BV18-167BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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