Infineon Technologies CY7C1315BV18-200BZC

Overview

CY7C1315BV18-200BZC from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports, DDR interfaces on both ports, and 4-word burst transfers for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1315BV18-200BZC datasheet, CY7C1315BV18-200BZC pinout, CY7C1315BV18-200BZC application, or CY7C1315BV18-200BZC equivalent, key selection criteria include its 36-bit wide synchronous interface, echo clock (CQ/CQ) support for timing margin recovery, BWS[3:0] byte write select capability, and 165-ball FBGA package compatibility with high-speed PCB routing constraints.

Technical Context

The device uses QDR-II architecture with fully independent read and write ports sharing a single multiplexed address bus latched on alternating edges of K/K clocks. Internal organization is four 128K × 36 arrays, enabling concurrent access without bus turnaround.

Both ports employ DDR signaling: data is sampled on rising edges of K/K for writes and C/C for reads, achieving effective 400 MT/s throughput at 200 MHz clock. A Delay-Locked Loop (DLL) aligns internal timing, and echo clocks (CQ/CQ) track C/C to simplify source-synchronous capture at the controller.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C1315BV18-250BZC, this -200BZC variant trades 25% peak bandwidth for relaxed signal integrity and power delivery requirements; versus AS7C33256PFS-20BIN, it provides true concurrent access, deterministic timing, and 36-bit width - essential for real-time packet processing.

Availability

CY7C1315BV18-200BZC is available at Aetrix Electronics and suitable for network infrastructure, wireless baseband, high-speed test equipment, and FPGA-based protocol acceleration requiring stable component supply over extended production lifecycles.

Supply support for CY7C1315BV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in packet-switched systems where concurrent read/write and source-synchronous timing are mandatory.

FAQ

What is the minimum supported VDDQ voltage for CY7C1315BV18-200BZC?

The absolute minimum VDDQ is 1.4 V per the datasheet's DC Characteristics table. Operation below this level risks output driver malfunction and timing violations on Q[35:0], especially under temperature extremes or high load. Systems must maintain VDDQ ≥1.4 V across all operating conditions, including transient droop during burst writes.

Can CY7C1315BV18-200BZC operate in single-clock mode using only K and C?

Yes - the device supports single-clock mode where K serves as both input and output timing reference, and C is used as the sole output clock. In this mode, CQ is derived from K instead of C, and all synchronous inputs and outputs are referenced to K's rising edge. This simplifies clock distribution but reduces achievable bandwidth versus dual-clock operation.

How does ZQ pin calibration affect signal integrity on Q[35:0] outputs?

ZQ calibration sets output driver impedance to match the PCB trace characteristic impedance (typically 48–50 Ω). When connected to a 240 Ω resistor to ground, it configures drivers for 48 Ω (0.2 × 240 Ω), minimizing reflections and improving eye diagram opening. Incorrect ZQ termination causes overshoot, undershoot, and timing jitter that degrades DDR timing margins at 400 MT/s.

Is CY7C1315BV18-200BZC compatible with JTAG boundary scan testing?

Yes - the device implements IEEE 1149.1 JTAG TAP controller with TDI, TDO, TCK, and TMS pins. Boundary scan supports interconnect testing of the 165-ball FBGA footprint and verification of solder joint integrity, provided the PCB layout adheres to JTAG chain topology rules and signal routing guidelines in the datasheet's "Test Access Port" section.