Infineon Technologies CY7C1315BV18-200BZI

Overview

CY7C1315BV18 from Cypress Semiconductor is a 512K × 36-bit (18-Mbit), 1.8V synchronous QDR-II SRAM with independent read/write ports, 200 MHz K-clock operation, DDR interfaces delivering 400 MT/s effective data rate, and echo clocks (CQ/CQ) for precise high-speed data capture in networking packet buffers and switch fabric memory subsystems.

For engineers reviewing the CY7C1315BV18 datasheet, CY7C1315BV18 pinout, CY7C1315BV18 application, or CY7C1315BV18 equivalent, key selection considerations include its 165-ball FBGA package, 36-bit wide x 4-word burst architecture, dual-clock domain timing (K/K and C/C), HSTL-18 I/O compatibility, and support for depth expansion via four byte write selects (BWS[3:0]).

Technical Context

The device implements a true dual-port QDR-II architecture: separate dedicated D[35:0] inputs and Q[35:0] outputs eliminate bus turnaround, enabling concurrent read and write operations on the same clock cycle. Address latching occurs on alternating rising edges of K and K clocks, supporting pipelined access with 1.5-cycle latency.

It uses internal DLL for accurate data placement, supports single- or dual-clock modes, and features programmable output drive strength via ZQ impedance calibration. Core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V ensure compatibility with HSTL-18 signaling standards and low-power operation at 200 MHz.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with CY7C1315BV18-250BZI, the -200BZI variant trades 50 MHz bandwidth for lower power and thermal footprint; versus AS7C3256B-20JC, it provides 4× higher effective bandwidth, deterministic latency, and concurrent port operation - essential for modern packet processing.

Availability

CY7C1315BV18-200BZI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, optical transport framer memory, and ATE FIFO applications requiring stable component supply across multi-year production cycles.

Supply support for CY7C1315BV18-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure and real-time signal processing.

FAQ

What is the minimum supported VDDQ voltage for CY7C1315BV18-200BZI?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed and may cause output driver malfunction or timing violations. At 1.4 V, HSTL-18-compatible receivers must be used, and ZQ calibration should be performed with RQ = 50 Ω to maintain 25 Ω output impedance.

Can CY7C1315BV18-200BZI operate in single-clock mode?

Yes - it supports single-clock mode where K and C are tied together, and K and C are tied together. In this configuration, all timing references derive from the K/K pair, and echo clocks CQ/CQ track K/K instead of C/C. The AC timing parameters shift accordingly, with tKQ and tKQ replacing tCQ and tCQ.

How does the ZQ pin affect signal integrity?

ZQ connects to an external precision resistor (typically 50 Ω to ground) to calibrate internal output driver impedance to 25 Ω (0.2 × RQ). This matches standard 50 Ω PCB traces, minimizing reflections and ensuring clean eye diagrams at 400 MT/s. Leaving ZQ floating or shorting it to VDDQ disables calibration and forces minimum drive strength.

Is JTAG boundary-scan supported in functional operation mode?

Yes - the IEEE 1149.1 TAP controller operates independently of memory function. TDI, TDO, TCK, and TMS pins remain fully accessible during normal read/write operation. Boundary-scan instructions can be executed without halting memory access, enabling in-system test while maintaining system uptime.