Infineon Technologies CY7C1315BV18-200BZXC

Overview

CY7C1315BV18-200BZXC from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, delivering 600 MT/s effective data rate using echo clocks CQ/CQ for timing-critical high-speed capture in packet buffering and network switching applications.

For engineers reviewing the CY7C1315BV18-200BZXC datasheet, CY7C1315BV18-200BZXC pinout, CY7C1315BV18-200BZXC application, or CY7C1315BV18-200BZXC equivalent, key selection criteria include burst depth (4-word), byte write select support (BWS[3:0]), FBGA-165 package compatibility, DLL-assisted data placement, and JTAG 1149.1 test access for production validation.

Technical Context

The device uses synchronous pipelined architecture with independent read and write ports sharing a multiplexed 17-bit address bus (A[16:0]). Read and write operations are initiated on rising edges of K/K clocks, while output data is clocked by C/C - enabling precise deskew control across multi-device memory subsystems.

Each access delivers four sequential 36-bit words via DDR interface, achieving full data coherency without bus turnaround. Internal delay lock loop (DLL) aligns echo clocks CQ/CQ to output clocks, minimizing setup/hold violations at 600 MT/s. Write operations use on-chip self-timed circuitry and support granular byte-level writes via BWS[3:0].

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant lead-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with CY7C1315BV18-250BZXC, the -200BZXC trades 50 MHz bandwidth for lower power and relaxed signal integrity margins; versus AS7C331024B-200BIN, it delivers true dual-port concurrency and source-synchronous timing - critical for deterministic packet processing.

Availability

CY7C1315BV18-200BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom baseband processing, and test equipment pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1315BV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with headquarters in San Jose, CA.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the ZQ pin on CY7C1315BV18-200BZXC?

The ZQ pin calibrates output driver impedance for Q[35:0], CQ, and CQ signals. When connected to a precision resistor to ground (RQ), it sets output impedance to 0.2 × RQ. Direct connection to VDDQ enables minimum-impedance mode. This ensures consistent signal integrity across varying PCB trace impedances without external termination resistors.

Can CY7C1315BV18-200BZXC operate in single-clock mode?

Yes - the device supports single-clock mode where K and C are tied together, and K and C are tied together. In this configuration, all data transfers use K/K as both input and output timing reference. Echo clocks CQ/CQ remain functional and synchronized to K/K, preserving source-synchronous capture capability without requiring separate C/C routing.

How does the 4-word burst architecture reduce system design complexity?

The 4-word burst reduces address bus toggling frequency by 75% compared to single-word access, cutting routing layers, trace length, and crosstalk risk. It also halves the number of address decode cycles needed per data block, simplifying controller logic and reducing gate count in FPGA-based memory managers interfacing to this SRAM.

What happens to Q[35:0] outputs when RPS is deasserted during an active read burst?

When RPS is deasserted mid-burst, the current read operation completes normally, and Q[35:0] continues driving valid data until the final word of the 4-word sequence is output. On the next rising edge of C after completion, all Q[35:0] pins automatically enter high-impedance (tri-state) mode, preventing bus contention without requiring external control logic.