Infineon Technologies CY7C1315BV18-200BZXI

Overview

CY7C1315BV18-200BZXI from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, 4-word burst transfers, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1315BV18-200BZXI datasheet, CY7C1315BV18-200BZXI pinout, CY7C1315BV18-200BZXI application, or CY7C1315BV18-200BZXI equivalent, key selection criteria include its 36-bit wide synchronous interface, 165-ball FBGA package (13 × 15 × 1.4 mm), HSTL-compatible output drive, JTAG 1149.1 test access, and DLL-based timing accuracy for deterministic 400 Mbps per pin data rates.

Technical Context

The CY7C1315BV18-200BZXI uses QDR-II architecture with fully independent read and write ports sharing a single multiplexed address bus (A[16:0]), enabling concurrent memory access without bus turnaround. Its dual-clock domain supports precise DDR timing: K/K clocks latch inputs (D[35:0], RPS, WPS, BWS[3:0]), while C/C clocks control output timing for Q[35:0] and echo clocks CQ/CQ.

Internally organized as four 128K × 36 arrays, it delivers four sequential 36-bit words per access, synchronized to rising edges of K and C clocks. The Delay Lock Loop (DLL) aligns internal timing to minimize skew, and ZQ pin enables programmable output impedance matching to system trace impedance via external resistor to ground.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant lead-free finish (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with CY7C1315BV18-200BZXI, the -250BZXI variant delivers +25% bandwidth with identical footprint and power profile, while the AS7C331024B offers simpler timing at the cost of 40% lower peak throughput and no true concurrency.

Availability

CY7C1315BV18-200BZXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, baseband processing, and real-time video frame buffering requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1315BV18-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial applications.

The QDR-II SRAM product line targets systems demanding deterministic low-latency, full-duplex memory access-especially in networking infrastructure, baseband processing, and high-end video equipment.

FAQ

What is the function of the ZQ pin on CY7C1315BV18-200BZXI?

The ZQ pin is an impedance calibration input that connects to an external precision resistor (typically 50 Ω) to ground. It enables the device to tune its output driver strength to match the system data bus impedance, ensuring optimal signal integrity for HSTL-compatible 36-bit DDR interfaces at 200 MHz. Direct connection to VDDQ activates minimum-impedance mode.

Can CY7C1315BV18-200BZXI operate with only one clock domain (K/C instead of K/K and C/C)?

Yes, the device supports single-clock-domain operation where K serves as both input and output clock reference. In this mode, C and C are tied to K and K respectively, and Q[35:0] and CQ/CQ are timed to K/K edges. This simplifies clock distribution but forfeits the flight-time deskew advantage of independent C/C routing.

How does the 4-word burst architecture affect address bus utilization?

The 4-word burst reduces address bus toggling frequency by 75%: a single A[16:0] address initiates retrieval of four consecutive 36-bit words from sequential locations. This lowers EMI, relaxes controller address-generation timing, and decreases PCB routing congestion compared to discrete word-access SRAMs.

What is the role of BWS[3:0] signals during a write operation?

BWS[3:0] are active-low byte write selects that independently enable or disable writing to each of four 9-bit byte lanes within the 36-bit D[35:0] bus. When a BWS bit is deasserted, the corresponding 9-bit segment retains its prior memory content, enabling efficient partial-word updates without read-modify-write cycles.