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Infineon Technologies CY7C1315CV18-167BZC

Part No.:
CY7C1315CV18-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315CV18-167BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,814

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Product details

Overview

CY7C1315CV18 from Cypress Semiconductor is a 18-Mbit QDR-II SRAM with 512K × 36 organization, designed for high-bandwidth packet buffering in network switches and routers. It supports concurrent read/write operations at 167 MHz (334 MT/s), delivers 4-word burst transfers per access, uses separate DDR read/write ports with echo clocks (CQ/CQ), and operates with 1.8 V core supply and 1.4–1.8 V I/O supply.

For engineers reviewing the CY7C1315CV18 datasheet, CY7C1315CV18 pinout, CY7C1315CV18 application, or CY7C1315CV18 equivalent, key selection criteria include QDR-II burst timing, 165-ball FBGA package compatibility, DLL-enabled 1.5-cycle read latency, HSTL-18 I/O compliance, and depth-expansion support via BWS[3:0] and port-select signals.

Technical Context

This device implements true dual-port synchronous pipelined architecture: independent K/K clocks latch write addresses and data, while C/C clocks drive read outputs with echo clocks CQ/CQ aligned to output timing. The Delay Lock Loop (DLL) enables precise 1.5-cycle read latency at full speed; disabling DLL via DOFF pin reverts operation to QDR-I mode with 1-cycle latency at ≤167 MHz.

All inputs are registered on rising edges of K or K; all outputs pass through registers clocked by C or C. Address bus is fully multiplexed-17 address lines (A[16:0]) serve both ports-and byte write select (BWS[3:0]) allows granular 9-bit byte-level writes across the 36-bit data path without disturbing unselected bytes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 configuration)
Max Clock Frequency 167 MHz - defines maximum sustained transaction rate (334 MT/s DDR)
Read Latency 1.5 cycles with DLL enabled; 1 cycle with DLL disabled (DOFF = LOW)
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports HSTL-18 interface compliance
Core Supply VDD = 1.8 V ±0.1 V - fixed low-voltage core for power-efficient high-speed operation
Burst Length 4-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Write Select Granularity BWS[3:0] - enables independent 9-bit byte write control across full 36-bit D[35:0]

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K/K; supports full or byte-masked writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output driven on rising edges of C/C; tri-stated when RPS inactive
A[16:0] Multiplexed address input 17-bit address latched on rising edge of K; shared by read and write ports
RPS Read port select Active-low signal enabling read burst; output drivers auto-tri-state when deasserted
WPS Write port select Active-low signal enabling write burst; ignored data when deasserted
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte segments of D[35:0]; enables partial writes
K, K Positive/negative write clock Rising edges sample all write-side inputs (D, A, WPS, BWS); define write timing domain
C, C Positive/negative read clock Rising edges drive Q[35:0]; used with CQ/CQ for deskewed high-speed capture
CQ, CQ Echo clocks Free-running outputs synchronized to C/C; simplify source-synchronous data capture at controller
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR-I mode (1-cycle latency, ≤167 MHz)
ZQ Output impedance calibration Connect to external resistor to ground to tune Q/CQ output impedance to 0.2 × RQ
VDDQ I/O power supply 1.4–1.8 V supply for HSTL-18 outputs; decoupling required per JEDEC guidelines
VDD Core power supply 1.8 V ±0.1 V supply for memory array and logic; separate from VDDQ
VREF HSTL reference voltage Static reference for input threshold and AC measurement; typically VDDQ/2

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates bus turnaround delay; enables simultaneous 334 MT/s read + write throughput
4-word burst architecture Reduces address bus frequency by 75% versus single-word access - lowers routing complexity
Delay Lock Loop (DLL) Enables 1.5-cycle read latency at full speed; improves timing margin in high-frequency systems
HSTL-18 compliant I/O Supports 1.4–1.8 V VDDQ with programmable drive strength; compatible with FPGA/ASIC memory controllers
JTAG 1149.1 test access Enables boundary scan testing and in-system debug without additional test pads
Byte-write masking (BWS[3:0]) Allows selective 9-bit updates within 36-bit word - critical for packet header modification

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Line-rate buffering of Ethernet frames in Layer 2/3 switching ASICs where ingress and egress traffic must be handled concurrently.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM serving as shared buffer between ingress parser and egress scheduler, with independent read/write ports synchronized to separate clock domains.

Use Value: 334 MT/s bidirectional bandwidth sustains 10 Gbps+ line rates; 4-word burst minimizes address bus congestion in space-constrained switch fabric layouts.

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment requiring deterministic low-latency memory access.

IC Role / Device Role / Timing Role: High-speed acquisition buffer interfacing directly with ADC/DAC controllers using source-synchronous C/C and CQ/CQ timing.

Use Value: Echo clocks (CQ/CQ) align with data edges at the controller, eliminating flight-time skew compensation; DLL ensures consistent 1.5-cycle latency across temperature/voltage.

Telecom Baseband Processing Medical Imaging Data Pipeline

Use Scenario: Inter-stage buffering in LTE/5G baseband processors handling multiple parallel channel processing paths.

IC Role / Device Role / Timing Role: Shared memory resource between FFT engines and channel encoders/decoders, accessed via dedicated read/write ports with burst-aligned addressing.

Use Value: BWS[3:0] enables efficient partial writes during symbol-level processing; 167 MHz operation meets 3GPP timing constraints without overclocking.

Use Scenario: Real-time DICOM image reconstruction pipeline in MRI/PET systems where raw sensor data must be buffered before GPU-based rendering.

IC Role / Device Role / Timing Role: High-throughput frame buffer between ADC front-end and FPGA-based image processor, operating in DLL-off QDR-I mode for deterministic 1-cycle latency.

Use Value: DOFF pin allows seamless transition to QDR-I mode for safety-critical timing validation; VDDQ range supports mixed-voltage board design with legacy peripherals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1315CV18-200BZC Higher max frequency (200 MHz) with tighter tAA/tHZ timing; requires 1.8 V ±0.05 V VDD tolerance Supports 400 MT/s operation in systems with stricter setup/hold margins Select when system clock tree supports <15 ps jitter and board layout accommodates tighter decoupling
AS7C331024B-167BIN Asynchronous SRAM with 167 MHz max access time; no DDR, no echo clocks, no DLL Limited to single-port, non-burst operation; lower bandwidth but simpler timing closure Choose only for cost-sensitive, non-concurrent-access applications where QDR-II features are unused

Compared with CY7C1315CV18-200BZC, this -167BZC variant trades peak bandwidth for relaxed voltage and jitter requirements; versus AS7C331024B-167BIN, it delivers true concurrent read/write capability and deterministic burst timing essential for packet-processing pipelines.

Availability

CY7C1315CV18 is available at Aetrix Electronics and suitable for network infrastructure, high-speed test instrumentation, telecom baseband subsystems, and medical imaging hardware requiring stable component supply over extended production lifecycles.

Supply support for CY7C1315CV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C1315CV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access buffering in packet-switched and real-time signal processing architectures.

FAQ

What is the function of the DOFF pin on CY7C1315CV18?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device operates in QDR-I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). This mode simplifies timing closure in systems where DLL calibration adds complexity or risk, and is commonly used during bring-up or safety-critical validation phases.

How does the BWS[3:0] signal enable partial writes in CY7C1315CV18?

BWS[3:0] are four active-low byte write select signals that independently gate 9-bit segments of the 36-bit D[35:0] bus. When a BWS bit is HIGH, its corresponding 9-bit byte is masked and unchanged during the write cycle; only bytes with LOW BWS are updated. This allows atomic modification of packet headers or metadata without reading-modify-write sequences.

Can CY7C1315CV18 operate with only a single clock domain (K-only)?

Yes - the device supports single-clock-mode operation where K serves as both input and output clock. In this mode, C and C are tied to K and K respectively, and Q[35:0] is clocked by K/K instead of C/C. Echo clocks CQ/CQ remain functional and phase-aligned to K/K, preserving source-synchronous capture capability without requiring separate C/C routing.

What is the purpose of the ZQ pin and how should it be terminated?

ZQ calibrates output driver impedance for Q[35:0] and CQ/CQ signals. It must be connected to a precision resistor (RQ) between ZQ and GND; typical RQ = 240 Ω yields 48 Ω output impedance (0.2 × RQ). Direct connection to VDDQ enables minimum-impedance mode (~24 Ω); floating or GND ties are prohibited and will cause undefined output behavior.

CY7C1315CV18-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315CV18-167BZC FAQ

1.How can I place an order for CY7C1315CV18-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1315CV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315CV18-167BZC reliable?

The price and inventory of CY7C1315CV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315CV18-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1315CV18-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315CV18-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1315CV18-167BZC?

CY7C1315CV18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315CV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315CV18-167BZC?

For technical support, including CY7C1315CV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315CV18-167BZC requirements.

6.How does Aetrix verify that CY7C1315CV18-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1315CV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315CV18-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1315CV18-167BZC?

All CY7C1315CV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315CV18-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315CV18-167BZC part is unused and in its original packaging.

Return procedure for CY7C1315CV18-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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