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Infineon Technologies CY7C1315JV18-300BZC

Part No.:
CY7C1315JV18-300BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315JV18-300BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,589

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Product details

Overview

CY7C1315JV18 from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, designed for high-bandwidth packet buffering in network switches and routers. It supports concurrent read/write operations at 300 MHz (600 MT/s DDR), features separate K/K and C/C clock domains, 1.5-cycle read latency with DLL enabled, and operates on 1.8 V core / 1.4–1.8 V I/O supply.

For engineers reviewing the CY7C1315JV18 datasheet, CY7C1315JV18 pinout, CY7C1315JV18 application, or CY7C1315JV18 equivalent, key selection criteria include burst depth (4-word), byte write select granularity (BWS0–BWS3), echo clock (CQ/CQ) timing support, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1315JV18 implements true dual-port QDR II architecture: independent read and write ports share a multiplexed 17-bit address bus but use separate clock domains-K/K for address/data capture and C/C for output data strobing. Its internal 128K × 36 memory array is organized across four sub-arrays to enable full-depth expansion via RPS/WPS control.

It integrates a Delay Lock Loop (DLL) for precise 1.5-cycle read latency alignment and supports DLL-off mode for QDR I–compatible 1-cycle latency at ≤167 MHz. Echo clocks CQ/CQ are free-running, synchronized to C/C, and used by system controllers for deterministic data capture without flight-time compensation circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 bits) - enables single-chip storage of 18,874 full-size Ethernet frames (1518 bytes each) with 36-bit bus width
Max Clock Frequency 300 MHz - defines maximum sustained transaction rate of 300 million read/write cycles per second per port
Data Rate 600 MT/s (DDR) - delivers 21.6 GB/s aggregate bandwidth (36 bits × 600 MHz) across read and write ports
Read Latency 1.5 cycles (DLL on) - ensures deterministic timing margin for synchronous controller design with minimal pipeline stalls
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - separates core logic and I/O power domains to reduce noise coupling and support HSTL-18 signaling
Burst Length 4-word - reduces address bus toggling frequency by 75% versus single-word access, lowering EMI and routing complexity
Write Select Granularity BWS0–BWS3 (4 × 9-bit bytes) - allows partial writes without read-modify-write, critical for header editing in packet processors

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-245AC footprint.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS0–BWS3
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of both C and C clocks; tri-stated when RPS is deasserted
A[16:0] Multiplexed address input 17-bit address latched on rising edge of K; shared by read and write ports to minimize pin count
RPS / WPS Port enable controls Active-low synchronous selects: RPS initiates read burst; WPS initiates write burst; both required for depth expansion
BWS[3:0] Byte write select inputs Four independent active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27])
C / C, K / K Differential clock inputs K/K clocks address/data; C/C clocks output data - enables skew-tolerant timing and eliminates need for external delay tuning
CQ / CQ Output echo clocks Free-running copies of C/C, referenced to same source - simplifies controller data capture using source-synchronous timing
ZQ Impedance calibration input Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ), matching typical PCB trace Z₀

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead - enables back-to-back read-after-write without idle cycles, increasing effective throughput by ≥30% vs. common-I/O SRAMs
4-word burst architecture Reduces address bus switching frequency to 25% of single-word rate - lowers dynamic power and simplifies high-speed routing on dense switch fabric PCBs
Variable-drive HSTL outputs Configurable drive strength via ZQ calibration - ensures signal integrity across varying trace lengths and loads in multi-drop memory subsystems
JTAG 1149.1 test access Enables boundary-scan testing of interconnects between CY7C1315JV18 and FPGA/ASIC controllers without physical probe access
DLL-enabled 1.5-cycle latency Provides fixed, jitter-immune read response time - essential for deterministic scheduling in real-time traffic management engines

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: Dedicated high-throughput buffer providing simultaneous read (for forwarding decision) and write (for packet capture) at line rate.

Use Value: 600 MT/s DDR bandwidth sustains 24 Gbps per 36-bit channel without bottlenecking the switch fabric interface.

Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers requiring low-jitter memory access.

IC Role / Device Role / Timing Role: QDR II SRAM acting as elastic store between asynchronous tributary streams and synchronous OC-192/STM-64 payloads.

Use Value: DLL-controlled 1.5-cycle latency ensures predictable phase alignment between payload clock domains and memory controller timing.

High-Speed Test Equipment Memory AI Accelerator Parameter Cache

Use Scenario: Capturing real-time waveform samples in digital storage oscilloscopes with >1 GS/s sampling rates.

IC Role / Device Role / Timing Role: Burst-mode write buffer accepting interleaved sample streams from parallel ADCs, then reading out in contiguous blocks.

Use Value: 4-word burst + separate ports allow continuous write capture while servicing background read requests for display rendering.

Use Scenario: Storing weight matrices and activation buffers in FPGA-based neural network inference accelerators.

IC Role / Device Role / Timing Role: On-chip high-bandwidth memory serving as low-latency parameter cache for systolic array compute units.

Use Value: Byte-selectable writes (BWS0–BWS3) enable efficient sparse update of weight tiles without full-line overwrites.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C331024B-20BIN 20 ns async access; 32M × 36 organization; no DDR or burst; 3.3 V only Used in legacy systems where timing determinism is less critical than cost; lacks echo clocks and DLL Select only if migrating from older designs with no DDR infrastructure and relaxed bandwidth requirements
MT47H64M16HR-37E DDR2 SDRAM; 1 Gbit; 64M × 16; requires refresh; 2.5 V; 375 MHz data rate Higher density but volatile with refresh overhead; unsuitable for deterministic latency-critical buffering Choose only when capacity outweighs latency predictability - e.g., large frame buffers with software-managed timing slack

Compared with AS7C331024B-20BIN and MT47H64M16HR-37E, CY7C1315JV18 uniquely delivers deterministic 1.5-cycle latency, concurrent dual-port operation, and echo-clock–assisted capture - making it irreplaceable in hardware-accelerated packet processing where microsecond-level jitter cannot be tolerated.

Availability

CY7C1315JV18 is available at Aetrix Electronics and suitable for network switch fabric design, telecom line card development, high-speed test instrumentation, and AI accelerator prototyping requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1315JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with headquarters in San Jose, CA.

CY7C1315JV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where bus turnaround latency and timing jitter must be eliminated.

FAQ

What is the minimum supported operating frequency for CY7C1315JV18?

The device has no specified minimum clock frequency - it operates down to DC (0 Hz) in DLL-off mode, retaining full functionality including burst reads/writes and port select control. However, DLL lock requires ≥100 MHz; below that, DLL remains unlocked and read latency defaults to 1 cycle (QDR I mode).

Can CY7C1315JV18 operate with only a single clock domain (K-only) instead of differential K/K and C/C?

Yes - the device supports single-clock mode where K drives both address/data capture and output data timing; C/C inputs are ignored, and Q[35:0] are clocked by K/K. In this mode, echo clocks CQ/CQ derive from K/K, and DLL remains functional for latency control.

How does ZQ pin calibration affect signal integrity in a multi-SRAM system?

ZQ calibration adjusts all 36 Q[35:0] drivers and both CQ/CQ outputs to match a target 48 Ω impedance (0.2 × 240 Ω). This ensures consistent edge rates and reflection behavior across all devices on the same bus, reducing timing skew and eye closure in point-to-multipoint topologies.

Is JTAG boundary scan supported during normal memory operation?

Yes - TDI, TDO, TCK, and TMS pins operate independently of memory function. Boundary-scan testing can be performed while the device is idle or even during active read/write cycles, provided TMS remains stable during instruction shifts and TCK complies with JTAG timing specs (≤10 MHz recommended).

CY7C1315JV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315JV18-300BZC FAQ

1.How can I place an order for CY7C1315JV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1315JV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315JV18-300BZC reliable?

The price and inventory of CY7C1315JV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315JV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1315JV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315JV18-300BZC transactions.

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4.How is shipping managed for CY7C1315JV18-300BZC?

CY7C1315JV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315JV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315JV18-300BZC?

For technical support, including CY7C1315JV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315JV18-300BZC requirements.

6.How does Aetrix verify that CY7C1315JV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1315JV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315JV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1315JV18-300BZC?

All CY7C1315JV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315JV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315JV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1315JV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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