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Infineon Technologies CY7C1315KV18-250BZCT

Part No.:
CY7C1315KV18-250BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315KV18-250BZCT.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,602

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Product details

Overview

CY7C1315KV18-250BZCT from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum clock frequency (40 ns cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write operations via independent ports and supports DDR data transfers at up to 500 Mbps per pin using echo clocks CQ/CQ and separate K/K and C/C timing domains. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1315KV18-250BZCT datasheet, CY7C1315KV18-250BZCT pinout, CY7C1315KV18-250BZCT application, or CY7C1315KV18-250BZCT equivalent, key selection criteria include 36-bit wide synchronous burst interface, DOFF-controlled 1-cycle vs. 1.5-cycle read latency, BWS[3:0] byte write select granularity, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully pipelined, synchronous read and write ports sharing a single multiplexed address bus latched on alternating rising edges of the K clock. Internal self-timed writes ensure deterministic write completion without external handshake.

The device uses dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to align data valid windows precisely at the receiver-critical for >500 Mbps DDR signaling integrity. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes, enabling system-level timing optimization.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 36-bit (18 Mbit total); enables 144-bit parallel data path per burst
Maximum Clock Frequency 250 MHz (40 ns cycle time); defines maximum sustained throughput of 18 Gbps aggregate bandwidth
Read Latency Selectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum read-to-read turnaround and pipeline depth
Core Supply Voltage (VDD) 1.8 V ±0.1 V; requires low-noise 1.8 V regulator with tight tolerance for stable internal timing
I/O Supply Voltage (VDDQ) 1.4 V to 1.8 V; supports interoperability with both 1.5 V and 1.8 V LVTTL/HSTL interfaces
Burst Length Four-word burst (36-bit words); reduces address bus toggling by 75% versus single-word access
Write Select Granularity BWS[3:0] controls four independent 9-bit bytes; allows partial writes without read-modify-write overhead

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZCT suffix).

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K clock; 36-bit parallel input path for burst writes
Q[35:0] Synchronous read data outputs Driven on rising edge of C clock; full 36-bit word delivered per read cycle
A[16:0] Multiplexed address inputs 17-bit address bus shared by read/write ports; latched on alternating K edges
BWS[3:0] Byte write select inputs Active-low controls 9-bit byte lanes D[8:0], D[17:9], D[26:18], D[35:27]; enables partial writes
K, K Input clocks (read/write) Differential pair driving internal registers; only rising edges used for synchronization
C, C Output clocks (read) Differential pair controlling Q[35:0] output register timing; minimizes skew vs. data
CQ, CQ Echo clocks Output-aligned copies of C/C; simplify source-synchronous capture at FPGA/ASIC receiver
DOFF Read latency control HIGH → 1.5-cycle latency; LOW → 1-cycle latency; sets internal pipeline staging
WPS Write port select Active-low enables write operation; deassertion blocks D[35:0] sampling regardless of clock
RPS Read port select Active-low enables read operation; deassertion forces Q[35:0] to high-impedance

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent access-no bus turnaround delay between successive reads and writes
Four-word burst architecture Reduces required address transitions by 75%, lowering signal integrity burden on PCB routing
DDR interfaces on both ports Delivers 500 Mbps per pin (250 MHz clock × 2 edges) without requiring source-synchronous strobes
Programmable 1- or 1.5-cycle read latency DOFF pin allows system-level trade-off between latency and pipeline efficiency in real-time applications
JTAG 1149.1 boundary scan Enables production test coverage for high-density FBGA solder joints without physical probe access

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to SerDes MAC logic.

Use Value: Concurrent read/write ports eliminate arbitration stalls, sustaining line-rate 10G/25G forwarding under bursty traffic loads.

Use Scenario: Frame assembly/disassembly in carrier-grade optical transport (OTN/SDH) line cards.

IC Role / Device Role / Timing Role: Synchronous burst memory for jitter-tolerant buffering between framer and DSP subsystems.

Use Value: Four-word burst + echo clocks enable deterministic <40 ns read-to-data-valid timing, meeting SONET/SDH jitter budgets.

High-Speed Test Equipment Memory Defense Radar Signal Processing

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-access FIFO replacement with deterministic latency for stimulus generation timing.

Use Value: DOFF-selectable latency allows precise alignment of stimulus output relative to trigger events within sub-nanosecond windows.

Use Scenario: Real-time pulse-Doppler radar processing in airborne electronic warfare systems.

IC Role / Device Role / Timing Role: Low-jitter, radiation-tolerant memory for FFT and CFAR algorithm data flow.

Use Value: Neutron soft error immunity (documented in datasheet) ensures reliable operation in high-altitude avionics environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 100 MHz max clock, ×36, 512K depth, 3.3 V I/O; no echo clocks or DOFF latency control Limited to lower-bandwidth legacy telecom systems; lacks QDR II timing flexibility Choose only if 3.3 V interface compatibility and cost sensitivity outweigh bandwidth needs
ISSI IS61WV102436BLL-15BLI 150 MHz max clock, ×36, 1M × 36, 1.8 V core/I/O; no K/K or C/C differential clock support Suitable for non-critical embedded buffers where DDR timing margin is relaxed Select when board layout cannot accommodate differential clock routing or echo clock trace matching

Compared with IDT72T3615L10PA and IS61WV102436BLL-15BLI, CY7C1315KV18-250BZCT uniquely delivers 250 MHz operation with echo-clock–assisted DDR timing, making it the only option supporting deterministic sub-40 ns read latency in 10G+ packet processing pipelines.

Availability

CY7C1315KV18-250BZCT is available at Aetrix Electronics and suitable for network switching, telecom line card design, high-speed test instrumentation, and defense radar signal processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1315KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1315KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent access and sub-cycle latency control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1315KV18-250BZCT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it enables 1-cycle latency for minimal pipeline delay. This setting directly affects the number of K-clock cycles between address assertion and valid Q[35:0] output, and is sampled synchronously on the K clock edge.

How does the BWS[3:0] signal operate during a write transaction?

BWS[3:0] are active-low byte write enables controlling four independent 9-bit lanes of D[35:0]. When a BWS bit is LOW, its corresponding 9-bit byte is written; when HIGH, that byte remains unaltered. All BWS signals are sampled on the same K-clock edge as D[35:0], enabling true partial writes without read-modify-write cycles or external masking logic.

Can CY7C1315KV18-250BZCT operate with only a single clock domain?

Yes-though optimized for dual-clock (K/K and C/C) operation, the device supports single-clock mode by tying K to C and K to C. In this configuration, read data is registered on the same clock used for address and write data capture, reducing PCB routing complexity at the cost of reduced timing margin and loss of echo clock benefits for data capture.

What is the purpose of the CQ and CQ pins?

CQ and CQ are echo clocks-output-aligned copies of the C and C clocks-driven simultaneously with Q[35:0] data. They provide a source-synchronous strobe at the receiver, eliminating flight-time mismatch between clock and data paths. This simplifies setup/hold timing closure in FPGA or ASIC receivers operating above 500 Mbps per pin.

CY7C1315KV18-250BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315KV18-250BZCT FAQ

1.How can I place an order for CY7C1315KV18-250BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315KV18-250BZCT reliable?

The price and inventory of CY7C1315KV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1315KV18-250BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315KV18-250BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1315KV18-250BZCT?

CY7C1315KV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315KV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315KV18-250BZCT?

For technical support, including CY7C1315KV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZCT requirements.

6.How does Aetrix verify that CY7C1315KV18-250BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1315KV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1315KV18-250BZCT?

All CY7C1315KV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315KV18-250BZCT part is unused and in its original packaging.

Return procedure for CY7C1315KV18-250BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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