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Infineon Technologies CY7C1315KV18-250BZIT

Part No.:
CY7C1315KV18-250BZIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315KV18-250BZIT.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,900

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Product details

Overview

CY7C1315KV18-250BZIT from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), echo clocks (CQ/CQ), and programmable impedance for high-speed memory subsystems in network packet buffers and baseband processors.

For engineers reviewing the CY7C1315KV18-250BZIT datasheet, CY7C1315KV18-250BZIT pinout, CY7C1315KV18-250BZIT application, or CY7C1315KV18-250BZIT equivalent, key selection criteria include concurrent read/write bandwidth, 1.5-cycle read latency (DOFF = HIGH), 165-ball FBGA package compatibility, and HSTL-15/18 I/O drive support in telecom and test equipment designs.

Technical Context

The CY7C1315KV18 implements QDR II architecture with fully independent read and write data paths-no bus turnaround required. Address latching occurs on alternating rising edges of K/K clocks, enabling true concurrent access to the same memory array via shared address bus.

It uses dual input clocks (K/K) for write control and dual output clocks (C/C) for read data timing, with echo clocks (CQ/CQ) aligned to output data edges to simplify capture at 500 Mbps. The device supports single-clock domain operation and includes a PLL for precise data placement relative to clock edges.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18-Mbit total); enables 144-bit wide data transfers per burst
Maximum Clock Frequency250 MHz (40 ns period); defines system timing budget for synchronous pipelined access
Data Rate per Pin500 Mbps (DDR at 250 MHz); doubles effective throughput without increasing clock frequency
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); selectable for latency vs. bandwidth trade-off
Core Supply Voltage1.8 V ±0.1 V; requires low-noise 1.8 V rail with tight regulation for stable SRAM operation
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V logic families
Package165-ball FBGA (13 × 15 × 1.4 mm); surface-mount footprint compatible with high-density PCB layouts

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free finish (BZIT suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data outputs36-bit parallel data driven on rising edge of C/C; aligned with echo clocks CQ/CQ for timing margin
A[16:0]Multiplexed address inputs17-bit address bus latched on rising edge of K; shared by read and write ports to reduce pin count
WPS, RPSWrite/read port selectActive-low enables; allows depth expansion by disabling unused ports in multi-chip configurations
BWS[3:0]Byte write select inputsFour independent active-low controls for D[8:0], D[17:9], D[26:18], D[35:27]; enables partial writes without read-modify-write
CQ, CQEcho clocksOutput-aligned copies of C/C clocks; eliminate board-level skew between data and capture clock in FPGA/ASIC receivers
K, KInput clocksDual-phase clocks for write timing; rising edges latch addresses and data-no internal phase shifting required
C, COutput clocksDual-phase clocks for read data timing; rising edges align with valid Q[35:0] transitions for reliable sampling
DOFFRead latency mode controlHigh = 1.5-cycle latency (optimized for throughput); Low = 1-cycle latency (optimized for low-latency response)
VDD, VDDQ, VSSPower and groundSeparate 1.8 V core (VDD) and 1.4–1.8 V I/O (VDDQ) supplies; decoupling required per ball group per datasheet layout guidelines

Key Features

FeatureDesign Value
Four-word burst architectureReduces address bus toggling frequency by 4× versus single-word access-critical for high-speed bus efficiency
Separate read/write data portsEnables simultaneous read and write to same memory location without arbitration or pipeline stalls
HSTL-15/18 programmable driveConfigurable output strength matches 1.5 V or 1.8 V termination schemes-eliminates external resistors in many layouts
JTAG 1149.1 boundary scanSupports IEEE-compliant test access for production ICT and board-level diagnostics without additional test points
On-chip PLLMinimizes clock-to-output skew across all 36 data bits-ensures deterministic timing closure in >500 Mbps systems

Applications

Network Packet BufferBaseband Signal Processor

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing to multiple MACs and traffic managers via QDR II dual-port interface.

Use Value: Concurrent read/write eliminates packet reordering bottlenecks; 500 Mbps per pin sustains 18 Gbps aggregate bandwidth for 10G+ switch fabrics.

Use Scenario: Real-time buffering of I/Q samples between ADC/DAC and DSP cores in LTE/5G radio units.

IC Role / Device Role / Timing Role: Synchronous pipelined memory co-processor providing deterministic latency for FFT, channel estimation, and precoding pipelines.

Use Value: 1.5-cycle read latency (DOFF = HIGH) ensures predictable data availability; echo clocks simplify FPGA capture timing at 250 MHz DDR.

Test Equipment Memory CacheHigh-Speed Data Acquisition

Use Scenario: Capturing and post-processing high-resolution waveform data in automated test systems with multi-GHz sampling rates.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer feeding FPGA-based pattern analysis engines with minimal pipeline delay.

Use Value: Four-word burst reduces address generation overhead; separate ports allow continuous streaming while background analysis reads previous segments.

Use Scenario: Real-time buffering of sensor fusion streams (IMU, LiDAR, camera) in autonomous vehicle ECUs requiring sub-microsecond latency.

IC Role / Device Role / Timing Role: Deterministic latency SRAM acting as time-critical scratchpad between sensor interface controllers and safety-critical MCU cores.

Use Value: 1-cycle read latency mode (DOFF = LOW) delivers immediate access to latest sensor data; 165-ball FBGA fits compact automotive PCB footprints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG100 MHz max frequency (vs. 250 MHz); 512K × 36; no echo clocks; LVDS I/O onlyLimited to lower-bandwidth legacy test systems; lacks QDR II burst concurrency and timing simplificationSelect only when backward compatibility with older IDT-based designs is mandatory and bandwidth < 8 Gbps suffices
ISSI IS61WV102436BLL-150BLI150 MHz max frequency; 1M × 36; no separate read/write ports; single-ended HSTL I/OSuitable for cost-sensitive non-concurrent applications; lacks true QDR II architecture and echo clock supportChoose for simpler, lower-cost designs where concurrent access and 500 Mbps signaling are not required

Compared with IDT72T3615L10BG and IS61WV102436BLL-150BLI, CY7C1315KV18-250BZIT delivers 2.5× higher clock rate, true concurrent read/write capability, and echo clocks-making it uniquely suited for next-generation packet processing and real-time signal buffering where timing margin and bandwidth are critical.

Availability

CY7C1315KV18-250BZIT is available at Aetrix Electronics and suitable for network packet buffers, baseband signal processors, test equipment memory caches, and high-speed data acquisition systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1315KV18-250BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for ultra-high-bandwidth, low-latency memory subsystems in networking infrastructure, wireless base stations, and test instrumentation-prioritizing deterministic timing, concurrent access, and signal integrity at multi-Gbps rates.

FAQ

What is the function of the DOFF pin on CY7C1315KV18-250BZIT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for optimized bandwidth; when LOW, it enables 1-cycle latency for minimal delay. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and must be held stable during operation-no dynamic switching is supported.

How does the CY7C1315KV18-250BZIT handle partial writes?

Partial writes are controlled by the four Byte Write Select (BWS[3:0]) inputs, each active-low and corresponding to an 9-bit byte lane within the 36-bit D[35:0] bus. When a BWS signal is deasserted, its associated byte remains unaltered in memory-enabling efficient updates without read-modify-write cycles. All BWS signals are sampled synchronously with D[35:0] on the rising edge of K/K.

Can CY7C1315KV18-250BZIT operate with only one clock domain?

Yes-the device supports single-clock domain operation where K and C are tied together (and K and C likewise), eliminating need for separate clock nets. In this mode, the internal PLL remains active to maintain timing alignment, and echo clocks CQ/CQ still track output data edges. Full dual-clock functionality is retained when separate K/K and C/C nets are used for maximum timing flexibility.

What is the purpose of the NC/xxxM pins on the 165-ball FBGA package?

The NC/36M, NC/72M, NC/144M, and NC/288M pins are no-connect die pads-physically present on the package but not bonded to the silicon. They may be left floating, tied to VSS, or used as routing channels; Cypress explicitly states they "can be tied to any voltage level" with no electrical impact. These pins exist for package compatibility across the QDR II family and do not require termination or biasing.

CY7C1315KV18-250BZIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315KV18-250BZIT FAQ

1.How can I place an order for CY7C1315KV18-250BZIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315KV18-250BZIT reliable?

The price and inventory of CY7C1315KV18-250BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZIT is usually 5 days.

3.What payment methods are accepted for CY7C1315KV18-250BZIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315KV18-250BZIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1315KV18-250BZIT?

CY7C1315KV18-250BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315KV18-250BZIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315KV18-250BZIT?

For technical support, including CY7C1315KV18-250BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZIT requirements.

6.How does Aetrix verify that CY7C1315KV18-250BZIT is sourced from the original manufacturer or authorized distributors?

All CY7C1315KV18-250BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZIT meets industry standards.

7.What is the process for return or replacement of CY7C1315KV18-250BZIT?

All CY7C1315KV18-250BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315KV18-250BZIT part is unused and in its original packaging.

Return procedure for CY7C1315KV18-250BZIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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