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Infineon Technologies CY7C1315KV18-250BZXC

Part No.:
CY7C1315KV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315KV18-250BZXC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:852

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Product details

Overview

CY7C1315KV18-250BZXC from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, 250 MHz maximum clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1315KV18-250BZXC datasheet, CY7C1315KV18-250BZXC pinout, CY7C1315KV18-250BZXC application, or CY7C1315KV18-250BZXC equivalent, key selection criteria include concurrent read/write bandwidth, 36-bit data width, FBGA-165 package compatibility, DOFF-controlled read latency mode, and HSTL-15/18 I/O support.

Technical Context

The device uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.

It supports dual-clock domain operation (K/K for address/control, C/C for output timing) and includes an on-chip PLL for precise data placement. Read latency is configurable: 1 cycle when DOFF = LOW (QDR I mode), 1.5 cycles when DOFF = HIGH (QDR II mode).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36)
Max Clock Frequency250 MHz - sets maximum sustained throughput of 18 Gbps (36-bit × 250 MHz × 2 transfers/cycle)
Core Supply Voltage1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply Range1.4 V to 1.8 V - supports interoperability with both HSTL-15 and HSTL-18 systems
Burst LengthFour-word - reduces effective address bus toggling rate by 4× versus single-word access
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - enables trade-off between timing margin and pipeline depth
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB routing and thermal management

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data inputs36-bit synchronous input bus sampled on rising edge of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0]Read data outputs36-bit synchronous output bus driven on rising edge of C/C; coherently reflects most recent write
K / KInput clocksDual-phase system clock pair - K drives address/control latching; K enables DDR timing alignment
C / COutput clocksDual-phase echo clocks synchronized to Q[35:0] outputs - eliminates flight-time skew in receiver capture
WPSWrite port selectActive-low signal enabling write transactions; deassertion disables D[35:0] sampling and write execution
RPSRead port selectActive-low signal enabling read transactions; deassertion blanks Q[35:0] outputs to high-impedance
BWS[3:0]Byte write selectsFour active-low signals controlling write enable per 9-bit byte group across 36-bit bus
DOFFRead latency controlHigh = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode)
VDD / VDDQ / VSSPower terminalsVDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; VSS = common ground - requires separate decoupling per supply domain
CQ / CQEcho clocksOutput-synchronous copies of C/C - used by external FPGA/ASIC to latch Q[35:0] with zero setup/hold uncertainty

Key Features

FeatureDesign Value
Separate read/write portsEnables true concurrent access - no arbitration delay or bus turnaround overhead in full-duplex traffic flows
Four-word burst architectureReduces required address transition rate by 75%, easing timing closure on wide parallel buses
HSTL-compatible I/O buffersProgrammable drive strength supports both 1.5 V and 1.8 V HSTL standards without level-shifting components
JTAG 1149.1 test access portEnables boundary scan testing and in-system diagnostics without requiring additional debug pins
On-chip PLLAligns internal timing paths to minimize jitter-induced timing violations at 250 MHz operation

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Routers

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switching fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to switch fabric controller and SerDes PHYs.

Use Value: 36-bit width matches typical internal bus widths; concurrent read/write avoids head-of-line blocking during backpressure conditions.

Use Scenario: Holding control-plane metadata and forwarding tables in carrier-grade router line cards operating at OC-192+ rates.

IC Role / Device Role / Timing Role: Deterministic-access memory subsystem supporting real-time route lookup and statistics aggregation.

Use Value: 1.5-cycle read latency with DOFF=HIGH ensures predictable worst-case response time for critical control operations.

Baseband Processing in 4G/LTE eNodeBVideo Frame Buffer in Broadcast Encoders

Use Scenario: Temporary storage of IQ samples and channel estimation results in LTE physical layer processing pipelines.

IC Role / Device Role / Timing Role: Dual-port memory bridging DSP cores and RF interface modules with strict timing alignment requirements.

Use Value: Echo clocks (CQ/CQ) eliminate board-level skew compensation, simplifying high-speed layout for 250 MHz DDR interfaces.

Use Scenario: Inter-frame buffering for 1080p60 video encoding pipelines requiring seamless frame rate conversion and motion compensation.

IC Role / Device Role / Timing Role: Synchronized dual-port frame store enabling simultaneous write of incoming frame and read of previous frame.

Use Value: Full data coherency guarantees that reads always return the most recently written pixel data, preventing visual artifacts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1315KV18-300BZXCHigher max clock: 300 MHz vs. 250 MHz; identical 512K × 36 organization and pinoutSupports higher bandwidth use cases (e.g., 100Gbps+ switch fabrics) where timing margin allows tighter setup/hold constraintsSelect when system clock budget permits 300 MHz operation and thermal/power design accommodates +15% current draw
AS7C3364B-250BINAsynchronous SRAM with 512K × 36 organization; no DDR, no echo clocks, no separate portsSuitable only for non-concurrent, lower-bandwidth applications where deterministic latency is less critical than simplicityChoose only if QDR II features (concurrency, echo clocks, burst) are unnecessary and cost/PCB area are primary constraints

Compared with CY7C1315KV18-300BZXC, the -250BZXC trades 50 MHz bandwidth for relaxed timing closure and lower power; compared with AS7C3364B-250BIN, it delivers true dual-port concurrency and DDR throughput but requires more complex clock domain management.

Availability

CY7C1315KV18-250BZXC is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, and baseband processing in 4G/LTE infrastructure requiring stable component supply across multi-year production cycles.

Supply support for CY7C1315KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR® II SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and scalable bandwidth - specifically engineered for switch fabric, baseband, and video processing subsystems.

FAQ

What is the function of the DOFF pin on CY7C1315KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle latency for optimized bandwidth and timing margin; when LOW, it reverts to QDR I mode with 1-cycle latency for backward compatibility. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the CY7C1315KV18-250BZXC support byte-selectable writes?

It uses four active-low Byte Write Select signals (BWS[3:0]), each controlling one 9-bit byte group across the 36-bit D[35:0] bus. When a BWS signal is deasserted (HIGH), the corresponding 9-bit segment is ignored during the write cycle, preserving prior data in those bits. All BWS signals are sampled synchronously with D[35:0] on the rising edge of K/K.

Can CY7C1315KV18-250BZXC operate with only a single clock source?

No - the device requires two differential clock pairs: K/K for address/control input timing and C/C for output data timing. While K and C may be derived from the same source, they must be independently routed and phase-aligned per datasheet specifications to meet setup/hold requirements. Single-clock mode is not supported.

What is the purpose of the CQ and CQ pins?

CQ and CQ are echo clocks - buffered, output-synchronous copies of C and C - delivered with matched trace length and propagation delay to Q[35:0]. They allow external receivers (e.g., FPGAs) to latch read data using source-synchronous timing, eliminating board-level skew and enabling reliable capture at 250 MHz DDR rates without complex deskew circuitry.

CY7C1315KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315KV18-250BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1315KV18-250BZXC reliable?

The price and inventory of CY7C1315KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1315KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C1315KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1315KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1315KV18-250BZXC?

For technical support, including CY7C1315KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1315KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1315KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1315KV18-250BZXC?

All CY7C1315KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1315KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1315KV18-250BZXC Tags

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