Infineon Technologies CY7C1315KV18-250BZXC
- Part No.:
- CY7C1315KV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1315KV18-250BZXC.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:852
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Product details
Overview
CY7C1315KV18-250BZXC from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, 250 MHz maximum clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.
For engineers reviewing the CY7C1315KV18-250BZXC datasheet, CY7C1315KV18-250BZXC pinout, CY7C1315KV18-250BZXC application, or CY7C1315KV18-250BZXC equivalent, key selection criteria include concurrent read/write bandwidth, 36-bit data width, FBGA-165 package compatibility, DOFF-controlled read latency mode, and HSTL-15/18 I/O support.
Technical Context
The device uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.
It supports dual-clock domain operation (K/K for address/control, C/C for output timing) and includes an on-chip PLL for precise data placement. Read latency is configurable: 1 cycle when DOFF = LOW (QDR I mode), 1.5 cycles when DOFF = HIGH (QDR II mode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36) |
| Max Clock Frequency | 250 MHz - sets maximum sustained throughput of 18 Gbps (36-bit × 250 MHz × 2 transfers/cycle) |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic and array operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with both HSTL-15 and HSTL-18 systems |
| Burst Length | Four-word - reduces effective address bus toggling rate by 4× versus single-word access |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - enables trade-off between timing margin and pipeline depth |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB routing and thermal management |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous input bus sampled on rising edge of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit synchronous output bus driven on rising edge of C/C; coherently reflects most recent write |
| K / K | Input clocks | Dual-phase system clock pair - K drives address/control latching; K enables DDR timing alignment |
| C / C | Output clocks | Dual-phase echo clocks synchronized to Q[35:0] outputs - eliminates flight-time skew in receiver capture |
| WPS | Write port select | Active-low signal enabling write transactions; deassertion disables D[35:0] sampling and write execution |
| RPS | Read port select | Active-low signal enabling read transactions; deassertion blanks Q[35:0] outputs to high-impedance |
| BWS[3:0] | Byte write selects | Four active-low signals controlling write enable per 9-bit byte group across 36-bit bus |
| DOFF | Read latency control | High = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode) |
| VDD / VDDQ / VSS | Power terminals | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; VSS = common ground - requires separate decoupling per supply domain |
| CQ / CQ | Echo clocks | Output-synchronous copies of C/C - used by external FPGA/ASIC to latch Q[35:0] with zero setup/hold uncertainty |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent access - no arbitration delay or bus turnaround overhead in full-duplex traffic flows |
| Four-word burst architecture | Reduces required address transition rate by 75%, easing timing closure on wide parallel buses |
| HSTL-compatible I/O buffers | Programmable drive strength supports both 1.5 V and 1.8 V HSTL standards without level-shifting components |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system diagnostics without requiring additional debug pins |
| On-chip PLL | Aligns internal timing paths to minimize jitter-induced timing violations at 250 MHz operation |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switching fabric. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to switch fabric controller and SerDes PHYs. Use Value: 36-bit width matches typical internal bus widths; concurrent read/write avoids head-of-line blocking during backpressure conditions. | Use Scenario: Holding control-plane metadata and forwarding tables in carrier-grade router line cards operating at OC-192+ rates. IC Role / Device Role / Timing Role: Deterministic-access memory subsystem supporting real-time route lookup and statistics aggregation. Use Value: 1.5-cycle read latency with DOFF=HIGH ensures predictable worst-case response time for critical control operations. |
| Baseband Processing in 4G/LTE eNodeB | Video Frame Buffer in Broadcast Encoders |
Use Scenario: Temporary storage of IQ samples and channel estimation results in LTE physical layer processing pipelines. IC Role / Device Role / Timing Role: Dual-port memory bridging DSP cores and RF interface modules with strict timing alignment requirements. Use Value: Echo clocks (CQ/CQ) eliminate board-level skew compensation, simplifying high-speed layout for 250 MHz DDR interfaces. | Use Scenario: Inter-frame buffering for 1080p60 video encoding pipelines requiring seamless frame rate conversion and motion compensation. IC Role / Device Role / Timing Role: Synchronized dual-port frame store enabling simultaneous write of incoming frame and read of previous frame. Use Value: Full data coherency guarantees that reads always return the most recently written pixel data, preventing visual artifacts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-300BZXC | Higher max clock: 300 MHz vs. 250 MHz; identical 512K × 36 organization and pinout | Supports higher bandwidth use cases (e.g., 100Gbps+ switch fabrics) where timing margin allows tighter setup/hold constraints | Select when system clock budget permits 300 MHz operation and thermal/power design accommodates +15% current draw |
| AS7C3364B-250BIN | Asynchronous SRAM with 512K × 36 organization; no DDR, no echo clocks, no separate ports | Suitable only for non-concurrent, lower-bandwidth applications where deterministic latency is less critical than simplicity | Choose only if QDR II features (concurrency, echo clocks, burst) are unnecessary and cost/PCB area are primary constraints |
Compared with CY7C1315KV18-300BZXC, the -250BZXC trades 50 MHz bandwidth for relaxed timing closure and lower power; compared with AS7C3364B-250BIN, it delivers true dual-port concurrency and DDR throughput but requires more complex clock domain management.
Availability
CY7C1315KV18-250BZXC is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, and baseband processing in 4G/LTE infrastructure requiring stable component supply across multi-year production cycles.
Supply support for CY7C1315KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.
The QDR® II SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and scalable bandwidth - specifically engineered for switch fabric, baseband, and video processing subsystems.
FAQ
What is the function of the DOFF pin on CY7C1315KV18-250BZXC?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle latency for optimized bandwidth and timing margin; when LOW, it reverts to QDR I mode with 1-cycle latency for backward compatibility. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.
How does the CY7C1315KV18-250BZXC support byte-selectable writes?
It uses four active-low Byte Write Select signals (BWS[3:0]), each controlling one 9-bit byte group across the 36-bit D[35:0] bus. When a BWS signal is deasserted (HIGH), the corresponding 9-bit segment is ignored during the write cycle, preserving prior data in those bits. All BWS signals are sampled synchronously with D[35:0] on the rising edge of K/K.
Can CY7C1315KV18-250BZXC operate with only a single clock source?
No - the device requires two differential clock pairs: K/K for address/control input timing and C/C for output data timing. While K and C may be derived from the same source, they must be independently routed and phase-aligned per datasheet specifications to meet setup/hold requirements. Single-clock mode is not supported.
What is the purpose of the CQ and CQ pins?
CQ and CQ are echo clocks - buffered, output-synchronous copies of C and C - delivered with matched trace length and propagation delay to Q[35:0]. They allow external receivers (e.g., FPGAs) to latch read data using source-synchronous timing, eliminating board-level skew and enabling reliable capture at 250 MHz DDR rates without complex deskew circuitry.
CY7C1315KV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1315KV18-250BZXC FAQ
1.How can I place an order for CY7C1315KV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1315KV18-250BZXC reliable?
The price and inventory of CY7C1315KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1315KV18-250BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315KV18-250BZXC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1315KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1315KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1315KV18-250BZXC?
For technical support, including CY7C1315KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1315KV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1315KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1315KV18-250BZXC?
All CY7C1315KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1315KV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1315KV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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