Infineon Technologies CY7C1315KV18-333BZC
- Part No.:
- CY7C1315KV18-333BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1315KV18-333BZC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:142
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Product details
Overview
CY7C1315KV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), separate read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1315KV18 datasheet, CY7C1315KV18 pinout, CY7C1315KV18 application, or CY7C1315KV18 equivalent, key selection criteria include its 512K × 36 organization, dual-clock DDR timing (K/K and C/C), echo clocks (CQ/CQ), DOFF-configurable 1- vs 1.5-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility.
Technical Context
The CY7C1315KV18 implements true QDR II architecture with physically independent read and write data paths-no bus turnaround required. Its 17-bit address bus latches on rising edges of K clock for both ports, while read data is registered on C/C clocks and write data on K/K clocks.
It uses internal PLL for precise data placement, supports JTAG 1149.1 boundary scan, and features programmable HSTL output drive strength. Depth expansion is enabled via four active-low byte write selects (BWS[3:0]) and port-select signals (WPS/RPS), each sampled synchronously on K/K rising edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18 Mbit total); enables single-access 144-bit wide data transfer per burst |
| Max Clock Frequency | 333 MHz (K/K and C/C inputs); defines maximum sustained 666 MT/s DDR throughput per port |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines pipeline depth for timing closure |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); allows interoperability with 1.5 V or 1.8 V system interfaces |
| Burst Length | Four-word burst (36-bit × 4 = 144-bit per access); reduces address bus toggling frequency by 4× |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); industry-standard footprint for high-density routing and thermal management |
| Output Interface | HSTL Class I compatible with variable drive strength; ensures signal integrity at 666 MHz DDR rates |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous input bus sampled on rising edge of K/K; supports full or partial writes via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit synchronous output bus driven on rising edge of C/C; coherently reflects most recent write |
| WPS | Write port select | Active-low signal enabling write operations; deassertion blocks D[35:0] sampling and write execution |
| RPS | Read port select | Active-low signal enabling read operations; deassertion forces Q[35:0] to high-impedance state |
| BWS[3:0] | Byte write selects | Four independent active-low controls for D[8:0], D[17:9], D[26:18], D[35:27]; enables granular 8-bit updates without read-modify-write |
| K, K | Input clocks | Differential pair driving write and address registers; only rising edges used for synchronization |
| C, C | Output clocks | Differential pair controlling Q[35:0] output register timing; minimizes skew between data and capture clock |
| CQ, CQ | Echo clocks | Output-synchronous copies of C/C; simplify source-synchronous capture in FPGA/ASIC receivers |
| DOFF | Read latency control | Static input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; affects timing budget and pipeline staging |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent read and write operations without bus contention or turnaround delay |
| Four-word burst architecture | Reduces effective address bus frequency by 75%, easing PCB layout and timing margin for high-speed systems |
| Echo clocks (CQ/CQ) | Provide receiver-side clocking aligned to Q[35:0] data edges, eliminating need for complex deskew circuitry |
| Programmable HSTL drive strength | Allows optimization of signal integrity and EMI across varying trace lengths and loading conditions |
| JTAG 1149.1 boundary scan | Supports automated test and debug of interconnect integrity in dense high-speed memory subsystems |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit line cards with strict latency constraints. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking first-in-first-out (FIFO) buffer between ingress and egress traffic engines. Use Value: Concurrent 666 MT/s read and write bandwidth eliminates serialization bottlenecks, sustaining full 10G/25G line-rate throughput. | Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test equipment (ATE) at >1 GSPS aggregate rate. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to FPGA-based pattern generators and analyzers. Use Value: Four-word burst and echo clocks enable deterministic, jitter-tolerant data capture without external FIFO logic or clock domain crossing. |
| Telecom Baseband Processing | Real-Time Video Frame Buffering |
Use Scenario: Temporary storage of OFDM symbol data during channel estimation and equalization in 4G/5G baseband units. IC Role / Device Role / Timing Role: Low-latency shared memory between parallel DSP cores performing real-time FFT and filtering operations. Use Value: 1-cycle read latency (DOFF = LOW) and separate ports allow pipelined processing with minimal inter-core stall cycles. | Use Scenario: Holding uncompressed 4K video frames (3840 × 2160 × 24 bpp) for real-time chroma keying and overlay compositing in broadcast switchers. IC Role / Device Role / Timing Role: Dual-port frame buffer supporting simultaneous write (ingest) and read (output scanout) at 60 Hz+ refresh rates. Use Value: 512K × 36 organization maps efficiently to 1920 × 1080 × 32 bpp pixel buffers, minimizing external memory bandwidth demand. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-bit QDR II+ (400 MHz max), integrated DLL instead of PLL; no DOFF latency toggle | Higher max frequency but fixed 1.5-cycle latency; requires tighter C/C-to-data setup/hold | Prefer when system clock exceeds 333 MHz and latency flexibility is not required |
| ISSI IS61WV102436B | Asynchronous 1M × 36 SRAM; no DDR, no echo clocks, no burst; 15 ns access time | Lower bandwidth (~67 MHz effective), simpler interface, no clock management overhead | Prefer for cost-sensitive, lower-throughput designs where timing margin is constrained |
Compared with IDT72T36150 and IS61WV102436B, CY7C1315KV18 uniquely balances 333 MHz operation, configurable read latency, and echo-clock–assisted capture-making it optimal for FPGA-based systems requiring deterministic timing and moderate bandwidth scaling.
Availability
CY7C1315KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and real-time video frame buffering requiring stable component supply across extended production lifecycles.
Supply support for CY7C1315KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II SRAM product line targets high-throughput, low-latency memory subsystems in packet-switched infrastructure-specifically engineered for concurrent read/write workloads without bus arbitration overhead.
FAQ
What is the function of the DOFF pin on CY7C1315KV18?
The DOFF (Data Output OFFset) pin configures read latency: when held LOW, the device operates with 1-cycle read latency (like QDR I); when held HIGH, it uses 1.5-cycle latency for improved timing margin in high-frequency designs. This setting is sampled at power-up and remains static during operation-it is not dynamically reconfigurable.
How does the CY7C1315KV18 handle partial writes?
Partial writes are controlled by the four active-low Byte Write Select signals (BWS[3:0]), each enabling one 9-bit byte within the 36-bit D[35:0] bus. When a BWS signal is deasserted, the corresponding byte remains unaltered in memory-no read-modify-write sequence is needed, preserving data integrity and reducing controller overhead.
Can CY7C1315KV18 operate with only a single clock domain?
Yes-though optimized for dual-clock operation (K/K for writes, C/C for reads), the device supports single-clock mode by tying K = C and K = C. In this configuration, all registers use the same clock edges, simplifying timing analysis at the cost of reduced maximum bandwidth due to shared clock path limitations.
What is the purpose of the CQ and CQ pins?
CQ and CQ are echo clocks-output-synchronous copies of C and C-driven concurrently with Q[35:0] data. They provide a dedicated, low-skew capture clock for receiving logic (e.g., FPGA IDELAY/ISERDES), eliminating the need for board-level clock-data alignment and improving setup/hold margin at 666 MHz DDR rates.
CY7C1315KV18-333BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1315KV18-333BZC FAQ
1.How can I place an order for CY7C1315KV18-333BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1315KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1315KV18-333BZC reliable?
The price and inventory of CY7C1315KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-333BZC is usually 5 days.
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Once your CY7C1315KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1315KV18-333BZC?
For technical support, including CY7C1315KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-333BZC requirements.
6.How does Aetrix verify that CY7C1315KV18-333BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1315KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-333BZC meets industry standards.
7.What is the process for return or replacement of CY7C1315KV18-333BZC?
All CY7C1315KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-333BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1315KV18-333BZC part is unused and in its original packaging.
Return procedure for CY7C1315KV18-333BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1315KV18-333BZC Tags

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