Infineon Technologies CY7C1315KV18-333BZXC

Overview

CY7C1315KV18-333BZXC from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces (666 MHz effective data rate), four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1315KV18-333BZXC datasheet, CY7C1315KV18-333BZXC pinout, CY7C1315KV18-333BZXC application, or CY7C1315KV18-333BZXC equivalent, key selection considerations include its 512K × 36 bus width, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, BWS[3:0] byte write control, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing requirements.

Technical Context

The CY7C1315KV18-333BZXC uses QDR II architecture with fully independent synchronous read and write ports sharing a multiplexed 17-bit address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.

It employs dual input clocks (K/K) for DDR timing control and dedicated output clocks (C/C) plus echo clocks (CQ/CQ) to minimize skew; internal PLL ensures precise data placement. The device supports programmable impedance, JTAG 1149.1 boundary scan, and synchronous self-timed writes with depth expansion via RPS/WPS and BWS[3:0].

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L5 and IS61WV102436B, CY7C1315KV18-333BZXC uniquely delivers 333 MHz QDR II concurrency with echo clocks and HSTL I/O in a standard FBGA - making it optimal for FPGA-based networking hardware requiring timing margin and pin compatibility.

Availability

CY7C1315KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and test equipment pattern memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1315KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1315KV18 belongs to Cypress's QDR® II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking infrastructure and high-speed test systems where concurrent read/write and deterministic timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1315KV18-333BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle pipelined read latency (QDR II mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This setting directly affects memory controller pipeline depth and must be held stable during operation - it is not dynamically switchable mid-operation per the datasheet timing specifications.

Does CY7C1315KV18-333BZXC support true simultaneous read and write to the same memory location?

No - while the device supports concurrent read and write operations to *different* addresses via independent ports, simultaneous access to the *same* address location is not permitted. The architecture enforces address collision avoidance: if identical addresses are presented on both ports in the same cycle, the write operation takes precedence and the read returns invalid or undefined data, as specified in the functional description and truth table of the datasheet.

How many address bits are used for the 512K × 36 configuration?

The CY7C1315KV18-333BZXC uses A[16:0] - 17 address bits - to access its 512K (2¹⁹) depth. Although 512K requires 19 bits, the internal 4-array organization (each 128K × 36) allows address multiplexing such that only 17 pins are needed; the higher-order bits are generated internally from port-select and array-control logic as confirmed in the logic block diagram and pin definition section.

Can the BWS[3:0] signals be used for partial writes smaller than one byte?

No - BWS[3:0] are byte write selects only, each controlling an 8-bit segment of the 36-bit D[35:0] bus (BWS0: D[8:0], BWS1: D[17:9], BWS2: D[26:18], BWS3: D[35:27]). There is no nibble- or bit-level write enable; partial-byte updates require full-byte masking at the system level or external logic, as explicitly defined in the Pin Definitions section for this part number.